88 diode
Abstract: No abstract text available
Text: SSFP2N90 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 900V Simple Drive Requirement ID25 = 2.2A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
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SSFP2N90
00A/s
di/dt200A/S
width300S;
88 diode
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stk029
Abstract: No abstract text available
Text: STK0290F Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=900V Min. Low Crss : Crss=3.8F(Typ.) Low gate charge : Qg=13.1nC(Typ.) Low RDS(on) :RDS(on)=7.2Ω(Max.) Ordering Information Type NO.
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STK0290F
STK0290F
STK0290
O-220F-3L
KSD-T0O023-002
stk029
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PDF
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Untitled
Abstract: No abstract text available
Text: STK0290F Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=900V Min. Low Crss : Crss=3.8F(Typ.) Low gate charge : Qg=13.1nC(Typ.) Low RDS(on) :RDS(on)=7.2Ω(Max.) Ordering Information Type NO.
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STK0290F
STK0290
O-220F-3L
KSD-T0O023-000
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stk029
Abstract: STK0290P
Text: Preliminary STK0290P Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=900V Min. Low Crss : Crss=5.0F(Typ.) Low gate charge : Qg=18.2nC(Typ.) Low RDS(on) :RDS(on)=7.2Ω(Max.) Ordering Information
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STK0290P
STK0290
O-220AB-3L
stk029
STK0290P
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N90Z Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N90Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a
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2N90Z
2N90Z
O-220F
QW-R502-848
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2N90
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N90 Preliminary Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a
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O-220
O-220F
O-252
QW-R502-478
2N90
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2n90
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N90 Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a
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O-251
O-252
O-220
O-220F
QW-R502-478
2n90
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2N90
Abstract: 900v 2.2a
Text: UNISONIC TECHNOLOGIES CO., LTD 2N90 Preliminary Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a
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O-252
O-251
O-220
QW-R502-478
2N90
900v 2.2a
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N90 Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and
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QW-R502-478
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Untitled
Abstract: No abstract text available
Text: QFET !
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FQI2N90TU
O-262
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2N109
2N1304
2N1305
2N1307
2N1613
2N1711
2N1893
2N2102
2N2148
2N2165
TRANSISTOR DATASHEET D1555
d1555 transistor
TRANSISTOR D1651
D1555
D1557
D1554
d1651
transistor s1854
transistor d1555
transistor d1878
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2SK3727
Abstract: power mosfet 600v
Text: 2SK3727-01 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK3727-01
O-220AB
2SK3727
power mosfet 600v
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2SK3728-01MR
Abstract: 2SK3728 2SK3728-01MR equivalent
Text: 2SK3728-01MR 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators
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2SK3728-01MR
O-220F
2SK3728-01MR
2SK3728
2SK3728-01MR equivalent
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IRFB
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: IRFBF30 TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:
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O-220AB
IRFBF30
IRFB
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Untitled
Abstract: No abstract text available
Text: AOTF3N80 800V, 2.8A N-Channel MOSFET General Description Product Summary The AOTF3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss
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AOTF3N80
AOTF3N80
AOTF3N80L
O-220F
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Untitled
Abstract: No abstract text available
Text: AOTF3N80 800V, 2.8A N-Channel MOSFET General Description Product Summary The AOTF3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss
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AOTF3N80
AOTF3N80
AOTF3N80L
O-220F
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Untitled
Abstract: No abstract text available
Text: AOD3N80 800V,2.8A N-Channel MOSFET General Description Product Summary The AOD3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS on , Ciss and Crss along with
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AOD3N80
AOD3N80
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irfbf30
Abstract: Diode IOR 10 dc
Text: International S Rectifier PD-9.616A IRFBF30 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 900V ^DS on = 3 -7 ^ lD = 3.6A Description DATA SHEETS
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IRFBF30
O-220
T0-220
lrTtQIT13tÃ
irfbf30
Diode IOR 10 dc
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IRFPF30
Abstract: No abstract text available
Text: International S Rectifier PD-9.618A IRFPF30 HEXFET P ow er M O S FE T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 900V R DS on = 3 -7 Q
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IRFPF30
O-247
T0-220
O-218
IRFPF30
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HE581
Abstract: No abstract text available
Text: HE300 and HE500 SERIES Single output Recommended for new deslgn-lns • ■ ■ ■ ■ ■ 60 to 75% efficiency Excellent regulation OVP on 5V output 115VAC input Short circuit protection Internal input filter 2 YEAR W ARRANTY This series of off-line switching power modules provides 25
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HE300
HE500
115VAC
15VDC.
25kHz
HE581
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HE583
Abstract: HE381 HE300 HE500 HE581 HE584 HE383
Text: HE300 and HE500 SERIES Single output Recommended for new deslgn-lns • ■ ■ ■ ■ ■ 60 to 75% efficiency Excellent regulation OVP on 5V output 115VAC input Short circuit protection Internal input filter 2 V E A R This series of off-line switching power modules provides 25
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HE300
HE500
115VAC
15VDC.
25kHz
HE583
HE381
HE581
HE584
HE383
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PDF
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HE581
Abstract: HE300 HE500 HE583 HE584
Text: HE300 and HE500 SERIES Single output Recommended for new deslgn-lns • ■ ■ ■ ■ ■ 60 to 75% efficiency Excellent regulation OVP on 5V output 115VAC input Short circuit protection Internal input filter 2 V E A R This series of off-line switching power modules provides 25
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HE300
HE500
115VAC
15VDC.
25kHz
HE581
HE583
HE584
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PDF
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HE581
Abstract: No abstract text available
Text: HE300 and HE500 SERIES Single output R e c o m m e n d e d fo r n e w d e s lg n -ln s 60 to 75% efficiency E xcellent regulation O V P on 5V o utput 115VAC input Short circuit protection Internal Input filter 2 YEA R W ARRAN TY This serie s of off-line s w itching po w e r m o dules pro v id e s 25
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HE300
HE500
115VAC
HE581
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BA100 diode
Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
BA100 diode
BA102
AAY20
B2M1-5
1N2528
PH1021
OA210 diode
DIODE AA116
BB105
GAZ17
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