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    IRG4BC10UD

    Abstract: IRG4BC10U transistor IRG4BC10UD
    Text: PD 91677B IRG4BC10UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 91677B IRG4BC10UD O-220AB 140ns O-220AB IRG4BC10UD IRG4BC10U transistor IRG4BC10UD

    IRG4BC10UD

    Abstract: transistor IRG4BC10UD
    Text: PD 91677B IRG4BC10UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 91677B IRG4BC10UD O-220AB 140ns O-220AB IRG4BC10UD transistor IRG4BC10UD

    Untitled

    Abstract: No abstract text available
    Text: PD 91677B IRG4BC10UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 91677B IRG4BC10UD O-220AB 140ns application60) O-220AB