PD85006
Abstract: PD85006-E AN1294 GRM39-X7R103K50C560 PD84002 PD85 EXCELDRC35C 706 SMD ST T112-16 16208
Text: PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V ■ Plastic package
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PD85006-E
Hz/13
2002/95/EC
PowerSO-10RF
PD85006-E
PD85006
AN1294
GRM39-X7R103K50C560
PD84002
PD85
EXCELDRC35C
706 SMD ST
T112-16
16208
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PD85006
Abstract: PD85006-E 16208 AN1294 706 SMD ST diode gp 434 EXCELDRC35C PD84002 PD85 740J
Text: PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V ■ Plastic package
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PD85006-E
Hz/13
2002/95/EC
PowerSO-10RF
PD85006-E
PD85006
16208
AN1294
706 SMD ST
diode gp 434
EXCELDRC35C
PD84002
PD85
740J
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PDF
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LDMOS transistor 1W
Abstract: J-STD-020B LET9060S PD57030S AN1294 smd transistor AO capacitor 0.1uf 500v
Text: LET9060S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 17 dB gain @ 945 MHz / 26V • NEW RF PLASTIC PACKAGE
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LET9060S
PowerSO-10RF
LET9060S
LDMOS transistor 1W
J-STD-020B
PD57030S
AN1294
smd transistor AO
capacitor 0.1uf 500v
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NV SMD TRANSISTOR
Abstract: AN1294 UHF rfid reader ma706
Text: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■
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PD84006-E
2002/95/EC
PowerSO-10RF
PD84006-E
NV SMD TRANSISTOR
AN1294
UHF rfid reader
ma706
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PDF
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Untitled
Abstract: No abstract text available
Text: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE
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LET9045S
PowerSO-10RF
LET9045S
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AN1294
Abstract: J-STD-020B LET9045S PD57030S capacitor 220uf
Text: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE
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LET9045S
PowerSO-10RF
LET9045S
AN1294
J-STD-020B
PD57030S
capacitor 220uf
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PDF
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Untitled
Abstract: No abstract text available
Text: LET9060S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 17 dB gain @ 945 MHz / 26V • NEW RF PLASTIC PACKAGE
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LET9060S
PowerSO-10RF
LET9060S
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PDF
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Untitled
Abstract: No abstract text available
Text: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet −production data Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz
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PD84006-E
2002/95/EC
PowerSO-10RF
PD84006-E
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SMD TRANSISTOR L6
Abstract: BLT80 philips Trimmer 60 pf KM10 KM10 transistor SMD ic catalogue smd transistor zi MRA775 L5 smd transistor TRANSISTOR SMD L3
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 File under Discrete Semiconductors, SC08b 1996 May 02 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation
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BLT80
SC08b
OT223
OT223
MAM043
SMD TRANSISTOR L6
BLT80
philips Trimmer 60 pf
KM10
KM10 transistor
SMD ic catalogue
smd transistor zi
MRA775
L5 smd transistor
TRANSISTOR SMD L3
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D2375
Abstract: BLF6G10S-45 RF35
Text: BLF6G10S-45 UHF power LDMOS transistor Rev. 01 — 23 February 2007 Preliminary data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance
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BLF6G10S-45
BLF6G10S-45
D2375
RF35
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Untitled
Abstract: No abstract text available
Text: BLF6G10S-45 Power LDMOS transistor Rev. 03 — 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G10S-45
BLF6G10S-45
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RF35
Abstract: BLF6G10S-45 TRANSISTOR SMD CODE 6.8 smd transistor f3 65
Text: BLF6G10S-45 Power LDMOS transistor Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G10S-45
BLF6G10S-45
RF35
TRANSISTOR SMD CODE 6.8
smd transistor f3 65
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d2375
Abstract: BLF6G10S-45 RF35
Text: BLF6G10S-45 Power LDMOS transistor Rev. 03 — 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G10S-45
BLF6G10S-45
d2375
RF35
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power transistor Ic 4A NPN smd
Abstract: transistor Ic 4A datasheet NPN smd smd 4A transistor power transistor Ic 4A datasheet NPN smd smd 4A data npn switching transistor Ic 5A transistor Ic 4A datasheet NPN FCX1047A 230NS rce marking
Text: Transistors SMD Type NPN Silicon Power Switching Transistor FCX1047A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance.
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FCX1047A
Type000
50MHz
power transistor Ic 4A NPN smd
transistor Ic 4A datasheet NPN smd
smd 4A transistor
power transistor Ic 4A datasheet NPN smd
smd 4A data
npn switching transistor Ic 5A
transistor Ic 4A datasheet NPN
FCX1047A
230NS
rce marking
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification FCX1047A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance. RCE sat 40mÙ at 4A.
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FCX1047A
4008-318-1IC
50MHz
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thermistor 100k
Abstract: 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E
Text: Design Application Note AN-090 2 x SLD-1026Z LDMOS Application Circuits Abstract Bias Discussion Sirenza Microdevices' SLD-1026Z is a high performance LDMOS transistor designed for operation up to 2.7 GHz. This application note demonstrates balanced configuration application circuits operating in the 800,
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AN-090
SLD-1026Z
EAN-105860
thermistor 100k
0402CG101J9B200
600S0R3BT250XT
600S1R5BT250XT
transistor smd 303
transistor SMD DK
PANASONIC ECR
SMD TRANSISTOR R90
SLD1026Z
SLD1026Z-EVAL-E
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7805 smd
Abstract: SMD DIODE gp 317 5Bp smd transistor 431 smd REGULATOR IC 7805 SMD 5Bp smd transistor data motorola j127 725 REGULATOR motorola 7805 motorola smd-transistor 5bp
Text: MOTOROLA Order this document by TP3005/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor TP3005 The TP3005 is designed for 960 MHz base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.
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TP3005/D
TP3005
TP3005
TP3005/D*
7805 smd
SMD DIODE gp 317
5Bp smd
transistor 431 smd
REGULATOR IC 7805 SMD
5Bp smd transistor data
motorola j127
725 REGULATOR motorola
7805 motorola
smd-transistor 5bp
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PDF
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358 SMD transistor
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.
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BLT80
BLT80
OT223
MAM043
cir2724825
SCDS48
127061/1200/02/pp12
771-BLT80-T/R
358 SMD transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.
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BLT80
OT223
OT223
MAM043
SCDS48
127061/1200/02/pp12
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BLT81 UHF power transistor Product specification Supersedes data of November 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.
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BLT81
OT223
OT223
MAM043
SCDS48
127061/1200/02/pp12
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PDF
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BLT81
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC08b 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation
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BLT81
SC08b
OT223
OT223
MAM043
SCDS48
127061/1200/02/pp12
BLT81
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PDF
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4894
Abstract: SMD ic catalogue BLT80 KM10 4312 020 36640
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.
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BLT80
OT223
OT223
MAM043
SCDS48
127061/1200/02/pp12
4894
SMD ic catalogue
BLT80
KM10
4312 020 36640
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PDF
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2222 730
Abstract: BLT81
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification Supersedes data of November 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.
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BLT81
OT223
OT223
MAM043
SCDS48
127061/1200/02/pp12
2222 730
BLT81
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PDF
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transistor smd LC 77
Abstract: D103D smd transistor 2x5 smd transistor ne c2 BLT81 TRANSISTOR SMD catalog smd ic 611 SMD ic catalogue UHF POWER TRANSISTOR SMD Transistor 1c
Text: Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. APPLICATIONS • Hand-held radio equipment in the 900 MHz communication band. C DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a
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OCR Scan
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BLT81
OT223
OT223
711002b
OT223.
transistor smd LC 77
D103D
smd transistor 2x5
smd transistor ne c2
BLT81
TRANSISTOR SMD catalog
smd ic 611
SMD ic catalogue
UHF POWER TRANSISTOR
SMD Transistor 1c
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