Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SK3641 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss: Ciss = 930 pF TYP. 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 MAX. VGS = 4.5 V, ID = 15 A
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2SK3641
O-252
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930 18a diode smd
Abstract: 930 18a 2SK3641 930 diode smd
Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3641 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss: Ciss = 930 pF TYP. 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 MAX. VGS = 4.5 V, ID = 15 A
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2SK3641
O-252
930 18a diode smd
930 18a
2SK3641
930 diode smd
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Untitled
Abstract: No abstract text available
Text: Product specification PMV22EN 30 V, 5.2 A N-channel Trench MOSFET Rev. 1 — 30 March 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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PMV22EN
O-236AB)
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SOD87 footprint
Abstract: implotec news melf zener diode smd smd schottky diode 82 sod87 Melf MiniMELF SMD Footprint IMPLOTEC SMD zener diode 203 philips zener diode bep zener diode smd
Text: 6224-02 Semicond Implotec Bro 5 20-12-2000 11:49 Pagina 1 Philips’ Implotec Philips Semiconductors is a leading innovator in both SMD and leaded packaging solutions, and boasts an impressive record in Philips’ Implotec™ pioneering solid glass encapsulation technologies.The Implotec range
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OD123)
SOD87 footprint
implotec news
melf zener diode smd
smd schottky diode 82
sod87 Melf
MiniMELF SMD Footprint
IMPLOTEC
SMD zener diode 203
philips zener diode
bep zener diode smd
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type High-speed diode BAS32L LL-34 Unit: mm Features Small hermetically sealed glass SMD package 1.50 1.30 2.64REF High switching speed: max. 4 ns 0.50 0.35 Continuous reverse voltage:max. 75 V Repetitive peak reverse voltage:max. 75 V 3.60 3.30
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BAS32L
LL-34
64REF
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diode smd 270a
Abstract: smd transistor 3400 ld smd transistor smd transistor nc 61 KRF4905S mosfet, hexfet to-263 930 diode smd EAR20
Text: Transistors IC SMD Type HEXFET Power MOSFET KRF4905S 1 .2 7 -0+ 0.1.1 TO-263 Features Advanced Process Technology Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 P-Channel Fully Avalanche Rated 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 1 5 .2 5 -0+ 0.2.2
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KRF4905S
O-263
diode smd 270a
smd transistor 3400
ld smd transistor
smd transistor nc 61
KRF4905S
mosfet, hexfet to-263
930 diode smd
EAR20
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Untitled
Abstract: No abstract text available
Text: IC IC SMD Type MOS Field Effect Transistor KPA1871 TSSOP-8 Features Unit: mm Can be driven by a 2.5-V power source Low on-state resistance RDS on 1 = 26 m TYP. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 27 m TYP. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 38 m TYP. (VGS = 2.5 V, ID = 3.0 A)
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KPA1871
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BAS32L
Abstract: No abstract text available
Text: BAS32L HIGH SPEED DIODE FEATURES • Small hermetically-sealed glass SMD package • High switching speed • Continuous reverse voltage • Repetitive peak reverse voltage • Repetitive peak forward current APPLICATION • High-Speed Switching • Fast Logic Applications
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BAS32L
BAS32L
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BAS32L
Abstract: No abstract text available
Text: BAS32L HIGH SPEED DIODE FEATURES • Small hermetically-sealed glass SMD package • High switching speed • Continuous reverse voltage • Repetitive peak reverse voltage • Repetitive peak forward current APPLICATION • High-Speed Switching • Fast Logic Applications
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BAS32L
BAS32L
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BAS32L
Abstract: No abstract text available
Text: BAS32L HIGH SPEED DIODE LL-34 Cathode band FEATURES • Small hermetically-sealed glass SMD package • High switching speed • Continuous reverse voltage • Repetitive peak reverse voltage • Repetitive peak forward current APPLICATION • High-Speed Switching
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BAS32L
LL-34
BAS32L
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BAS32L
Abstract: No abstract text available
Text: BAS32L HIGH SPEED DIODE FEATURES • Small hermetically-sealed glass SMD package • High switching speed • Continuous reverse voltage • Repetitive peak reverse voltage • Repetitive peak forward current APPLICATION • High-Speed Switching • Fast Logic Applications
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BAS32L
BAS32L
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Untitled
Abstract: No abstract text available
Text: Product specification BAS32L LL-34 Unit: mm Features Small hermetically sealed glass SMD package 1.50 1.30 2.64REF High switching speed: max. 4 ns 0.50 0.35 Continuous reverse voltage:max. 75 V Repetitive peak reverse voltage:max. 75 V 3.60 3.30 Repetitive peak forward current:max. 450 mA.
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BAS32L
LL-34
64REF
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2SK3570
Abstract: 930 diode smd
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3570 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 23 nC TYP. VDD = 16 V, VGS = 10 V, ID = 48 A Built-in gate protection diode
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2SK3570
O-263
2SK3570
930 diode smd
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED Infrared illuminator SMAL940-60 Lead Pb Free Product – RoHS Compliant SMAL940-60 SMD type Infrared illuminator on AlN ceramics SMAL940-60 is a wide viewing and extremely high output power illuminator assembled with a total of
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SMAL940-60
SMAL940-60
940nm
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Untitled
Abstract: No abstract text available
Text: Product specification PMV16UN 20 V, 5.8 A N-channel Trench MOSFET Rev. 1 — 4 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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PMV16UN
O-236AB)
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PD55035S
Abstract: No abstract text available
Text: DB-55035S-930 RF POWER amplifier using 1 x PD55035S N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 890 - 930 MHz ■ Supply voltage: 13.6V ■ Output power: 30W ■ Efficiency: 47% - 56% ■ Load mismatch: 10:1
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DB-55035S-930
PD55035S
DB-55035S-930
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Untitled
Abstract: No abstract text available
Text: Product specification PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev. 1 — 11 March 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
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PMV32UP
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 — 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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PMV48XP
O-236AB)
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TRANSISTOR SMD MARKING CODE 1 KW
Abstract: No abstract text available
Text: Product specification PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Rev. 1 — 5 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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PMV20XN
O-236AB)
TRANSISTOR SMD MARKING CODE 1 KW
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55035
Abstract: 3214W-1-103E BZX284C5V1 EEVHB1V100P JESD97 PD55035S PD55035 930 diode smd
Text: DB-55035S-930 RF POWER amplifier using 1 x PD55035S N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 890 - 930 MHz ■ Supply voltage: 13.6V ■ Output power: 30W ■ Efficiency: 47% - 56% ■ Load mismatch: 10:1
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DB-55035S-930
PD55035S
DB-55035S-930
55035
3214W-1-103E
BZX284C5V1
EEVHB1V100P
JESD97
PD55035S
PD55035
930 diode smd
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DAN202K
Abstract: No abstract text available
Text: DAN202K Data Sheet Switching Diode DAN202K Dimensions Unit : mm Applications Ultra high speed switching Land size figure (Unit : mm) Features 1) Small mold type. (SMD3) 2) High reliability 2.9±0.2 各リードとも Each lead has same dimension
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DAN202K
S0T-346
SC-59
05MIN
100mA
300us
200pF
100pF
R1120A
DAN202K
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DAN217
Abstract: No abstract text available
Text: Data Sheet Switching diode DAN217 Features 1 Small mold type. SMD3) 2) High reliability ＋0.1 0.15－0.06 ＋0.2 2.8±0.2 0.95 1.6－0.1 (3) 2.4 2.9±0.2 各リー ドと も ＋0.1 同lead 寸法has same dimension 0.4 －0.05 Each Land size figure (Unit : mm)
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DAN217
S0T-346
SC-59
300us
200pF
100pF
R1120A
DAN217
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Untitled
Abstract: No abstract text available
Text: Data Sheet Switching Diode DAN202K Applications Ultra high speed switching Dimensions Unit : mm Land size figure (Unit : mm) Features 1) Small mold type. (SMD3) 2) High reliability 2.9±0.2 各リードとも Each lead has same dimension 同寸法
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DAN202K
S0T-346
SC-59
10pcs
100mA
30pcs
200pF
100pF
R1120A
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors High-speed diode BAS32L FEATURES DESCRIPTION • Small hermetically sealed glass SMD package The BAS32L is a high-speed switching diode fabricated in planar technology, and encapsulated in the small hermetically sealed glass SOD80C SMD
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BAS32L
BAS32L
OD80C
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