M67760HC
Abstract: f941m
Text: MITSUBISHI RF POWER MODULE M67760HC 896-941MHz, 12.5V, 20W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±1 2 3 4 60±1 6±0.2 52±1 1 R1.5 2 5 R2±0.2 1 2 3 4 5 6 6 0.5 ±0.15 4±0.2 4.5±1 16.5±1 10.5±1 12±1 PIN: 1 Pin : RF INPUT
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M67760HC
896-941MHz,
896MHz
400mW
941MHz
M67760HC
f941m
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RA03M8894M
Abstract: RA03M8894M-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8894M RoHS Compliance , 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8894M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 889- to
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RA03M8894M
889-941MHz
RA03M8894M
941-MHz
RA03M8894M-101
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RA45H8994M1-101
Abstract: G marking RA45H8994M1 POUT18 lta 601
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to
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RA45H8994M1
896-941MHz
RA45H8994M1
45-watt
941-MHz
RA45H8994M1-101
G marking
POUT18
lta 601
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MARK "326" FET
Abstract: transistor 3669
Text: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor (b) (b) 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK
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RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
05Electric
Oct2011
MARK "326" FET
transistor 3669
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Untitled
Abstract: No abstract text available
Text: Specification for a 200-Watt Lowpass SMD LC Filter MtronPTI P/N: LF9438 I. General & Electrical Requirements 1. Passband: 768MHz to 941MHx 2. Insertion Loss within the Passband : ≤ 0.25dB 3. VSWR: 1.5:1 maximum 4. Group Delay Absolute within the Passband: ≤ 3.0nsec
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200-Watt
LF9438
768MHz
941MHx
200-watts
EIAJ-STD-002
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M68757H
Abstract: 40T7
Text: MITSUBISHI RF POWER MODULE M68757H SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3W FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 30±0.2 2 26.6±0.2 21.2±0.2 3 2-R1.5±0.1 1 4 5 1 2 3 4 5 0.45 6±1 13.7±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY
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M68757H
896-941MHz,
896MHz
941MHz
M68757H
40T7
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RA45H8994M1
Abstract: RA45H8994M1-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to
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RA45H8994M1
896-941MHz
RA45H8994M1
45-watt
941-MHz
RA45H8994M1-101
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RA20H8994M
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to 941-MHz range.
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RA20H8994M
RA20H8994M
20-watt
941-MHz
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GRM39
Abstract: GRM708 RD05MMP1 diode GP 829 6030D
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power
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RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
GRM39
GRM708
diode GP 829
6030D
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RA03M8894M
Abstract: RA03M8894M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8894 RA03M8894M 03M8894M RoHS Compliance , 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8894M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 889- to
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RA03M8894M
03M8894
889-941MHz
RA03M8894M
941-MHz
RA03M8894M-101
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TRANSISTOR D 1785
Abstract: diode GP 829 transistor 3669 6030D RD05MMP1 diode 6.2 TRANSISTOR D 1765 720 transistor D 1762 than85 5.5w
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power
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RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
TRANSISTOR D 1785
diode GP 829
transistor 3669
6030D
diode 6.2
TRANSISTOR D 1765 720
transistor D 1762
than85
5.5w
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RA20H8994M
Abstract: RA20H8994M-101 mitsubishi rf RF MOSFET MODULE
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to
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RA20H8994M
896-941MHz
RA20H8994M
20-watt
941-MHz
RA20H8994M-101
mitsubishi rf
RF MOSFET MODULE
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RA45H8994M1
Abstract: RA45H8994M1-101 D3060
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to
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RA45H8994M1
896-941MHz
RA45H8994M1
45-watt
941-MHz
RA45H8994M1-101
D3060
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RF MOSFET MODULE
Abstract: RA03M8894M RA03M8894M-101 RA03M8894 MOSFET Amplifier Module
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8894M RoHS Compliance , 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8894M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 889- to
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RA03M8894M
889-941MHz
RA03M8894M
941-MHz
RF MOSFET MODULE
RA03M8894M-101
RA03M8894
MOSFET Amplifier Module
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Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456678 1234566785 345667859 RoHS Compliance , 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8894M is a 3.6-watt RF MOSFET Amplifier
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889-941MHz
RA03M8894M
941-MHz
RA03M8894M
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Untitled
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to 941-MHz range.
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RA20H8994M
896-941MHz
RA20H8994M
20-watt
941-MHz
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metwn
Abstract: No abstract text available
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8994M 896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to 941-MHz
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RA20H8994M
935-941MHz
RA20H8994M
20-watt
941-MHz
metwn
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RA03M8894M
Abstract: RA03M8894M-01 mitsubishi power module
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8894M 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8894M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 889- to
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RA03M8894M
889-941MHz
RA03M8894M
941-MHz
RA03M8894M-01
mitsubishi power module
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RA20H8994M
Abstract: RA20H8994M-01 transistor mosfet 536 hatfield attenuator
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8994M 896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to
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RA20H8994M
935-941MHz
RA20H8994M
20-watt
941-MHz
RA20H8994M-01
transistor mosfet 536
hatfield attenuator
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RA45H8994M1
Abstract: RA45H8994M1-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to
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RA45H8994M1
896-941MHz
RA45H8994M1
45-watt
941-MHz
RA45H8994M1-101
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grm708
Abstract: transistor 5024 GRM39 RD05MMP1 Diode GP 622 diode GP 829 Diode GP 641 diode gp 537
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power
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RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
grm708
transistor 5024
GRM39
Diode GP 622
diode GP 829
Diode GP 641
diode gp 537
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING (b) (b) 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK
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RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly to the drain of the
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RA45H8994M1
896-941MHz
RA45H8994M1
45-watt
941-MHz
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M68745H
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M68745H SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3.8W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 45 2 3 42 2-R1.5 1 4 5 5 18 5 8.5 36.5 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY
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M68745H
896-941MHz,
941MHz
M68745H
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