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    IRHG563110

    Abstract: IRHG567110 MO-036AB
    Text: PD - 94246B IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)


    Original     		94246B IRHG567110 MO-036AB) IRHG563110 MIL-STD-750, MlL-STD-750, 430mH, IRHG563110 IRHG567110 MO-036AB PDF