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    IRF2804L

    Abstract: IRF2804S
    Text: PD - 94495B IRF2804S IRF2804L HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 2.5mΩ G Description Specifically designed for Automotive applications,


    Original     		PDF 94495B IRF2804S IRF2804L EIA-418. IRF2804L IRF2804S