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    Untitled

    Abstract: No abstract text available
    Text: PD - 94947B IRLML6302PbF l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free HEXFET Power MOSFET *  VDSS = -20V  ' 6  RDS(on) = 0.60Ω


    Original     		94947B IRLML6302PbF OT-23 EIA-481 EIA-541. PDF

    diode marking 355 SOT23

    Abstract: mosfet ir 840
    Text: PD - 94947B IRLML6302PbF l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free HEXFET Power MOSFET *  VDSS = -20V  ' 6  RDS(on) = 0.60Ω


    Original     		94947B IRLML6302PbF OT-23 EIA-481 EIA-541. diode marking 355 SOT23 mosfet ir 840 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94947B IRLML6302PbF l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free HEXFET Power MOSFET *  VDSS = -20V  ' 6  RDS(on) = 0.60Ω


    Original     		94947B IRLML6302PbF OT-23 EIA-481 EIA-541. PDF