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    A12Q

    Abstract: No abstract text available
    Text: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.


    Original     		PDF 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF O-220AB O-262 A12Q

    Untitled

    Abstract: No abstract text available
    Text: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.


    Original     		PDF 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF O-220AB O-262 IRGB6B60KDPbF IRGS6B60KDPbF O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.


    Original     		PDF 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF O-220AB O-262