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    Untitled

    Abstract: No abstract text available
    Text: PD - 95603B IRG4IBC10UDPbF UltraFast Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features l l l l l C UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter


    Original     		95603B IRG4IBC10UDPbF O-220 140ns O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95603B IRG4IBC10UDPbF UltraFast Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features l l l l l C UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter


    Original     		95603B IRG4IBC10UDPbF O-220 140ns O-220AB PDF