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    9575AGJ

    Abstract: AP9575AGJ
    Text: 9575AGJ RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Higher Gate-Source Voltage D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -60V RDS ON 64mΩ ID G -17A S Description The TO-251 package is universally preferred for all commercialindustrial applications and suited for low voltage applications


    Original     		AP9575AGJ O-251 O-251 9575AGJ 9575AGJ AP9575AGJ PDF

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    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP9575AGH/J-HF-3 P-channel Enhancement-mode Power MOSFET Lower On-resistance D Simple Drive Requirement BV DSS Fast Switching Characteristic RDS ON G RoHS-compliant, halogen-free -60V 64mΩ ID -17A S Description D (tab) Advanced Power MOSFETs from APEC provide the designer with the best


    Original     		AP9575AGH/J-HF-3 AP9575AGH-HF-3 O-252 AP9575AGJ-HF-3 O-251 AP9575A 9575AGJ O-251 PDF