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    95818 Search Results

    95818 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    ISL95818IRTZ-T Renesas Electronics Corporation 3-Phase PWM Controller for VR12.5 and VR12.6+ CPUs Visit Renesas Electronics Corporation
    ISL95818IRTZ Renesas Electronics Corporation 3-Phase PWM Controller for VR12.5 and VR12.6+ CPUs Visit Renesas Electronics Corporation
    ISL95818HRTZ-T Renesas Electronics Corporation 3-Phase PWM Controller for VR12.5 and VR12.6+ CPUs Visit Renesas Electronics Corporation
    ISL95818HRTZ Renesas Electronics Corporation 3-Phase PWM Controller for VR12.5 and VR12.6+ CPUs Visit Renesas Electronics Corporation
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    95818 Price and Stock

    Elesa SPA CE.95818

    DD51, MECHANICAL POSITION INDICA
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    Elesa SPA CE.95818-4N

    DD51, MECHANICAL POSITION INDICA
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    Elesa SPA CE.95818-C1

    DD51, MECHANICAL POSITION INDICA
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    Elesa SPA CE.95818-C1-4N

    DD51, MECHANICAL POSITION INDICA
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    Essentra Components 495818

    HEATSHRINK 3/16" X 32.8' WHITE
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    DigiKey 495818 4 1
    • 1 $34.71
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    Mouser Electronics 495818
    • 1 $30.39
    • 10 $27.25
    • 100 $26.4
    • 1000 $26.24
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    95818 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    95818

    Abstract: No abstract text available
    Text: PD - 95818 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 0.13Ω 16A IRHYB64230CM 600K Rads (Si)


    Original
    PDF O-257AA) IRHYB67230CM IRHYB63230CM IRHYB64230CM IRHYB68230CM 1000K 90MeV/ 5M-1994. O-257AA. 95818

    80c85

    Abstract: IC 8212 5962R9581801QJC 5962R9581801QXC 5962R9581801VJC 5962R9581801VXC HS-80C85RH HS-82C12RH intersil 8212 CERAMIC FLATPACK
    Text: HS-82C12RH Radiation Hardened 8-Bit Input/Output Port March 1996 Features Functional Diagram • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Intersil’ QM Plan


    Original
    PDF HS-82C12RH MIL-PRF-38535 80c85 IC 8212 5962R9581801QJC 5962R9581801QXC 5962R9581801VJC 5962R9581801VXC HS-80C85RH HS-82C12RH intersil 8212 CERAMIC FLATPACK

    5962R9581801QJC

    Abstract: 5962R9581801QXC 5962R9581801VJC 5962R9581801VXC HS-80C85RH HS-82C12RH 108RAD
    Text: HS-82C12RH S E M I C O N D U C T O R Radiation Hardened 8-Bit Input/Output Port March 1996 Features Functional Diagram • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Harris’ QM Plan


    Original
    PDF HS-82C12RH MIL-PRF-38535 1-800-4-HARRIS 5962R9581801QJC 5962R9581801QXC 5962R9581801VJC 5962R9581801VXC HS-80C85RH HS-82C12RH 108RAD

    Untitled

    Abstract: No abstract text available
    Text: PD-95818B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides


    Original
    PDF PD-95818B O-257AA) IRHYB67230CM IRHYB63230CM 90MeV/ 5M-1994. O-257AA.

    Untitled

    Abstract: No abstract text available
    Text: PD-95818D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYB67230CM Radiation Level 100K Rads (Si) IRHYB63230CM 300K Rads (Si) RDS(on) I D 0.13Ω 16A 0.13Ω 16A International Rectifier’s R6 TM technology provides


    Original
    PDF PD-95818D O-257AA) IRHYB67230CM IRHYB63230CM 90MeV/ 5M-1994. O-257AA.

    IRHYB63230CM

    Abstract: IRHYB67230CM 8H6Y
    Text: PD-95818C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 16A 0.13Ω Low-Ohmic


    Original
    PDF PD-95818C O-257AA) IRHYB67230CM IRHYB67230CM IRHYB63230CM O-257AA 90MeV/ 8H6Y

    Untitled

    Abstract: No abstract text available
    Text: PD-95818D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYB67230CM Radiation Level 100K Rads (Si) IRHYB63230CM 300K Rads (Si) RDS(on) I D 0.13Ω 16A 0.13Ω 16A Low-Ohmic


    Original
    PDF PD-95818D O-257AA) IRHYB67230CM IRHYB63230CM 90MeV/ 5M-1994. O-257AA.

    Untitled

    Abstract: No abstract text available
    Text: VS-16EDU06-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 16 A FRED Pt FEATURES • Ultrafast recovery time, reduced Qrr, and soft recovery K • 175 °C maximum operating junction temperature • For PFC CRM, snubber operation • Low forward voltage drop


    Original
    PDF VS-16EDU06-M3 J-STD-020, O-263AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Semiconductors, Rectifiers / April 2015 Author: Giovanni Marengo Tel: +39 011 4510345 office , +39 348 0032784 (mobile) E-mail: [email protected] New 10 A to 30 A FRED Pt Rectifiers in SMPD Package Offer Increased Power Density and System


    Original
    PDF O-263AC) O-263 AEC-Q101-qualified VS-16CDH02-M3) VS-16CDU06HM3) VS-16CDU06-M3) VS-16EDH02HM3) VS-16EDH02-M3) VS-16EDU06HM3)

    8212 latch

    Abstract: 5962R9581801QJC 5962R9581801QXC 5962R9581801VJC 5962R9581801VXC HS-80C85RH HS-82C12RH 17D06
    Text: HS-82C12RH Semiconductor Radiation Hardened March 1996 8' Bit Input/O utput POU Functional Diagram Features • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Harris’ QM Plan


    OCR Scan
    PDF HS-82C12RH MIL-PRF-38535 HS-80C85RH 8212 latch 5962R9581801QJC 5962R9581801QXC 5962R9581801VJC 5962R9581801VXC HS-82C12RH 17D06

    harris 8212

    Abstract: No abstract text available
    Text: 33 H A R R HS-82C12RH Radiation Hardened 8' Bît Input/Output Port March 1996 Features • Functional Diagram Devices QML Qualified in Accordance with MIL-PRF-38535 DS1 » • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Harris’ QM Plan


    OCR Scan
    PDF HS-82C12RH MIL-PRF-38535 HS-80C85RH 1-800-4-HARRIS harris 8212

    95812

    Abstract: 54F651FM 54F651SDM 74F651SC 74F651SPC F651 J24F M24B N24C 96b1
    Text: 651*652 National Semiconductor 54F/74F651 54F/74F652 T ransceivers/Registers General Description Features These devices consist of bus transceiver circuits with D-type flip-flops, and co ntro l circuitry arranged fo r m ulti­ plexed transm ission of data d irectly from the input bus or


    OCR Scan
    PDF 54F/74F651 54F/74F652 95812 54F651FM 54F651SDM 74F651SC 74F651SPC F651 J24F M24B N24C 96b1