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Catalog Datasheet	MFG & Type	Document Tags	PDF
d2011 Abstract: No abstract text available Text: FTD2011 N- Channel Silicon MOS FET Load S/W Use TENTATIVE Features • Low ON-state resistance. • 2.5V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount unit Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage	Original	FTD2011 1000mm2 980303TM2fXHD d2011	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

d2011

Abstract: No abstract text available
Text: FTD2011 N- Channel Silicon MOS FET Load S/W Use TENTATIVE Features • Low ON-state resistance. • 2.5V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount unit Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage

Original

FTD2011 1000mm2 980303TM2fXHD d2011

PDF