Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    980306TM2FXHD Search Results

    980306TM2FXHD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ499 P- Channel Silicon MOS FET TENTATIVE Features and Applications • Low ON-state resistance. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC Drain Current(Pulse) Allowable power Dissipation


    Original     		2SJ499 --30V --10V --10V --15V PDF

    s104 diode

    Abstract: marking s104 transistor S104 Mos Fet S104 FSS104 FET MARKING QG S104 s104 transistor
    Text: FSS104 P- Channel Silicon MOS FET DC/DC Converter TENTATIVE Features and Applications • Low ON-state resistance. • Very high speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC


    Original     		FSS104 1200mm2 --10V 980306TM2fXHD s104 diode marking s104 transistor S104 Mos Fet S104 FSS104 FET MARKING QG S104 s104 transistor PDF