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    D2003

    Abstract: FET MARKING QG FTD2003
    Text: FTD2003 N- Channel Silicon MOS FET Very High Speed-Switchng TENTATIVE Features • Low ON-state resistance. • 2.5V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount unit Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage


    Original     		FTD2003 1000mm2 981221TM2fXHD D2003 FET MARKING QG FTD2003 PDF