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    Text: FTD1012 P- Channel Silicon MOS FET TENTATIVE Features • Low ON-state resistance. • 4V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC


    Original     		PDF FTD1012 --10V, --10V 990210TM2fXHD