2SK1902
Abstract: No abstract text available
Text: 2SK1902 N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high speed switching. • Low voltage drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage
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2SK1902
O-220
990929TM2fXHD
2SK1902
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2SJ271
Abstract: No abstract text available
Text: 2SJ271 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • Low-voltage dreve. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage
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2SJ271
--100V
--50V
--10V
--15A
990929TM2fXHD
2SJ271
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2SJ406
Abstract: No abstract text available
Text: 2SJ406 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • Low-voltage dreve. • Micaless package facilitating easy mounting. Absolute Maximum Ratings / Ta=25°C
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2SJ406
990929TM2fXHD
2SJ406
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marking S139
Abstract: S139
Text: FSS139 Load S/W Applications TENTATIVE Features and Applications • Low ON-state resistance. • Ultrahigh-speed switching. • 2.5V drive. Absoulute Maximum Ratings / Ta=25°C Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current D.C ID
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FSS139
1200mm2
--10V
990929TM2fXHD-1/2
marking S139
S139
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