IRF6150
Abstract: IR 30 S2
Text: PD - 93943 PROVISIONAL IRF6150 HEXFET Power MOSFET l l l l l Ultra Low RSS on per Footprint Area Low Thermal Resistance Bi-Directional P-Channel Switch Super Low Profile (<.8mm) Available Tested on Tape & Reel VSS -20V RSS(on) max IS 0.036Ω@VGS1,2 = -4.5V -7.9A
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IRF6150
IRF6150
IR 30 S2
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Untitled
Abstract: No abstract text available
Text: PD - 93883 PROVISIONAL IRF7467 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification VDSS RDS on max ID 30V 0.0115Ω 10A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage
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IRF7467
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Untitled
Abstract: No abstract text available
Text: PD - 93914 PROVISIONAL IRF7468 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l VDSS RDS on max ID 40V 0.017Ω 9.0A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage
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IRF7468
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Untitled
Abstract: No abstract text available
Text: PD - 93886A PROVISIONAL IRF7460 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l VDSS RDS on max ID 20V 0.010Ω 10A Benefits l Ultra-Low Gate Impedance S l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage
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3886A
IRF7460
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Untitled
Abstract: No abstract text available
Text: PD - 93914A PROVISIONAL IRF7468 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l VDSS RDS on max ID 40V 0.017Ω 9.0A Benefits l Ultra-Low Gate Impedance S l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage
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3914A
IRF7468
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IRF7470
Abstract: No abstract text available
Text: PD - 93913A PROVISIONAL IRF7470 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l VDSS RDS on max ID 40V 0.013Ω 11A Benefits l Ultra-Low Gate Impedance S l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage
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3913A
IRF7470
IRF7470
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9936 b
Abstract: No abstract text available
Text: PD - 93884 PROVISIONAL IRF7466 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l VDSS RDS on max ID 30V 0.0115Ω 10A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage
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IRF7466
9936 b
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Untitled
Abstract: No abstract text available
Text: PD- 93882 PROVISIONAL IRF7457 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l VDSS RDS on max ID 20V 0.007Ω 15A Benefits l Ultra-Low RDS(on) at 4.5V VGS l Very Low Gate Impedance l Fully Characterized Avalanche Voltage
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IRF7457
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4.5v to 100v input regulator
Abstract: No abstract text available
Text: PD -94030 IRF7752 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS 30V RDS(on) max ID 0.030@VGS = 10V 4.6A 0.036@VGS = 4.5V 3.9A Description HEXFET® power MOSFETs from International Rectifier
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IRF7752
4.5v to 100v input regulator
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Untitled
Abstract: No abstract text available
Text: PD- 93882A PROVISIONAL IRF7457 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l VDSS RDS on max ID 20V 0.007Ω 15A Benefits 8 S 2 7 D S 3 6 D G 4 5 D Ultra-Low RDS(on) at 4.5V VGS S l Very Low Gate Impedance
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3882A
IRF7457
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Untitled
Abstract: No abstract text available
Text: PD - 93849A IRF7702 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS = -12V RDS(on) = 0.014Ω TSSOP-8 Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely
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3849A
IRF7702
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KX-45
Abstract: No abstract text available
Text: PD - 93913 PROVISIONAL IRF7470 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l VDSS RDS on max ID 40V 0.013Ω 11A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage
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IRF7470
KX-45
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SMPS MOSFET
Abstract: 24V 10A SMPS ic
Text: PD-93892 PROVISIONAL IRF7458 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification VDSS RDS on max ID 30V 0.008Ω 14A Benefits Low Gate Impedance to Reduce Switching Losses l Ultra-Low RDS(on) at 10V VGS
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PD-93892
IRF7458
SMPS MOSFET
24V 10A SMPS ic
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Untitled
Abstract: No abstract text available
Text: PD - 93886 PROVISIONAL IRF7460 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l VDSS RDS on max ID 20V 0.010Ω 10A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage
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IRF7460
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diode code yw
Abstract: IRF7702 IRF7706 9532 mosfet
Text: PD -94003 IRF7706 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 22mΩ@VGS = -10V 36mΩ@VGS = -4.5V -7.0A -5.6A Description HEXFET® Power MOSFETs from International Rectifier
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IRF7706
D52-7105
diode code yw
IRF7702
IRF7706
9532 mosfet
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Untitled
Abstract: No abstract text available
Text: PD- 93898 PROVISIONAL IRF7451 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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IRF7451
AN1001)
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24V 10A SMPS ic
Abstract: HEXFET SO-8 IRF7458
Text: PD-93892A PROVISIONAL IRF7458 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification Benefits Low Gate Impedance to Reduce Switching Losses l Ultra-Low RDS on at 10V VGS l Fully Characterized Avalanche Voltage
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PD-93892A
IRF7458
Derati252-7105
24V 10A SMPS ic
HEXFET SO-8
IRF7458
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power mosfet so8 FL
Abstract: No abstract text available
Text: PD- 93899 PROVISIONAL IRF7453 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See App. Note AN1001
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IRF7453
AN1001)
power mosfet so8 FL
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Untitled
Abstract: No abstract text available
Text: PD - 93849C IRF7702 PROVISIONAL HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS -12V 1 Description 2 HEXFET® 3 Power MOSFETs from International Rectifier
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93849C
IRF7702
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Untitled
Abstract: No abstract text available
Text: PD -93995 IRF7755 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -20V 51mΩ@VGS = -4.5V 86mΩ@VGS = -2.5V -3.7A -2.8A Description HEXFET® Power MOSFETs from International Rectifier
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IRF7755
S252-7105
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diode 838
Abstract: ST 7702 irf 439
Text: PD - 94001 IRF7705 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 18mΩ@VGS = -10V 30mΩ@VGS = -4.5V -8.0A -6.0A Description HEXFET® power MOSFETs from International Rectifier
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IRF7705
diode 838
ST 7702
irf 439
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Untitled
Abstract: No abstract text available
Text: PD -94003 IRF7706 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 22mΩ@VGS = -10V 36mΩ@VGS = -4.5V -7.0A -5.6A Description HEXFET® Power MOSFETs from International Rectifier
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IRF7706
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IRF7822
Abstract: No abstract text available
Text: PD- 94032 PROVISIONAL IRF7822 HEXFET Power MOSFET for DC-DC Converters • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications
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IRF7822
IRF7822
a52-7105
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Untitled
Abstract: No abstract text available
Text: PD - 93894 IRF7700 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS RDS(on) max ID -20V 0.015@VGS = -4.5V -8.6A 0.024@VGS = -2.5V -7.3A Description HEXFET® power MOSFETs from International Rectifier
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IRF7700
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