STK630
Abstract: No abstract text available
Text: STK630FC Semiconductor Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Low leakage current : 10 ㎂ Max. @ VDS=200V. • Low RDS(on) : 0.30Ω(Typ.) Ordering Information Type NO. Marking Package Code STK630FC STK630
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STK630FC
STK630FC
STK630
O-220F-3SL
KST-H025-002
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STK630
Abstract: stk630f
Text: STK630F Semiconductor Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Low leakage current : 10 ㎂ Max. @ VDS=200V. • Low RDS(on) : 0.40Ω(Max.) Ordering Information Type NO. Marking STK630F STK630 Package Code TO-220F-3L
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STK630F
STK630F
STK630
O-220F-3L
KSD-T0O001-001
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stk630
Abstract: No abstract text available
Text: STK630F Semiconductor Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Low leakage current : 10 ㎂ Max. @ VDS=200V. • Low RDS(on) : 0.30Ω(Typ.) Ordering Information Type NO. Marking STK630F STK630 Package Code TO-220F-3L
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STK630F
STK630
O-220F-3L
KST-H036-002
stk630
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SMK630
Abstract: No abstract text available
Text: SMK630F Advanced N-Ch Power MOSFET Features • • • • PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4 (Max.) D G Ordering Information Type N o. M a r k in g Pa ck a ge Code
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SMK630F
SMK630
O-220F-3L
SDB20D45
KSD-T0O043-001
SMK630
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Untitled
Abstract: No abstract text available
Text: SMN09L20D Advanced LOGIC N-Ch MOSFET Features • PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=17pF(Typ.) Low gate charge : Qg=9nC(Typ.) Low RDS(on) : RDS(on)=0.4 (Max.) D D G Ordering Information Type N o. M a r k ing Pa ck a ge Code
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SMN09L20D
SMN09L20
O-252
09L20
KSD-T6O024-000
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SMK0965F
Abstract: SMK0965
Text: SMK0965F Advanced N-Ch Power MOSFET Features • PIN Connection High Voltage : BVDSS=650V Min. Low Crss : Crss=16pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.85 (Max.) D G Ordering Information Type N o. M a r k ing Pa ck a ge Code
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SMK0965F
SMK0965
O-220F-3L
SMK0965F
SMK0965
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Untitled
Abstract: No abstract text available
Text: SMK630D Advanced N-Ch Power MOSFET Features • • • • PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4 (Max.) D D G Ordering Information Type N o. M a r k in g Pa ck a ge Code
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SMK630D
SMK630
O-252
KSD-T6O014-001
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Untitled
Abstract: No abstract text available
Text: SMK0965FJ Advanced N-Ch Power MOSFET Features • PIN Connection High Voltage : BVDSS=650V Min. Low Crss : Crss=16pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.85 (Max.) D G Ordering Information Type N o. M a r k ing Pa ck a ge Code
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SMK0965FJ
SMK0965
O-220F-3L
SDB20D45
KSD-T0O068-000
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rf630
Abstract: HIRF630 HIRF630F
Text: HI-SINCERITY Spec. No. : MOS200401 Issued Date : 2004.04.01 Revised Date : 2005.04.22 Page No. : 1/6 MICROELECTRONICS CORP. HIRF630 / HIRF630F HIRF630 Series Pin Assignment Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain
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MOS200401
HIRF630
HIRF630F
O-220AB
O-220FP
183oC
217oC
260oC
HIRF630,
rf630
HIRF630F
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Untitled
Abstract: No abstract text available
Text: SMN09T60WF Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • BVDDS=660V @Tjmax Low gate charge: Qg=27nC Typ. Low drain-source On resistance: RDS(on)=1.0Ω (Max.) 100% avalanche tested RoHS compliant device Ordering Information
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SMN09T60WF
SMN09T60W
O-220F-3L
SDB20D45
28-MAR-11
KSD-T0O091-000
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Untitled
Abstract: No abstract text available
Text: SMN09T50WF Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • BVDDS=550V @Tjmax Low gate charge: Qg=21nC Typ. Low drain-source On resistance: RDS(on)=0.85Ω (Max.) 100% avalanche tested RoHS compliant device Ordering Information
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SMN09T50WF
SMN09T50W
O-220F-3L
SDB20D45
28-MAR-11
KSD-T0O090-000
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Untitled
Abstract: No abstract text available
Text: SMN09T90FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • BVDDS=990V @Tjmax Low gate charge: Qg=65nC Typ. Low drain-source On resistance: RDS(on)=1.4Ω (Max.) RoHS compliant device Available in Halogen free package
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SMN09T90FD
SMN09T90
O-220F-3L
SDB20D45
28-MAR-11
KSD-T0O092-000
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SMK630
Abstract: mosfet 45a 200v
Text: SMK630F Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.)
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SMK630F
SMK630
O-220F-3L
SDB20D45
KSD-T0O043-001
SMK630
mosfet 45a 200v
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SMK0965
Abstract: diode marking code 57 SMK0965F
Text: SMK0965FJ Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • PIN Connection High Voltage : BVDSS=650V Min. Low Crss : Crss=16pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.85Ω(Max.) D G Ordering Information
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SMK0965FJ
SMK0965
O-220F-3L
SDB20D45
KSD-T0O068-000
SMK0965
diode marking code 57
SMK0965F
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Diode smd code 9a
Abstract: diode MARKING CODE 18A D09E60 IDP09E60 IEC61249-2-21
Text: IDP09E60 Fast Switching Diode Product Summary Features VRRM • 600 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant
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IDP09E60
PG-TO220-2
IEC61249-2-21
D09E60
Diode smd code 9a
diode MARKING CODE 18A
D09E60
IDP09E60
IEC61249-2-21
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SMK630
Abstract: No abstract text available
Text: SMK630D Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features • High Voltage : BVDSS=200V Min. Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.) D Ordering Information
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SMK630D
SMK630
O-252
KSD-T6O014-002
SMK630
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SMK630
Abstract: No abstract text available
Text: SMK630F Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features • PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.)
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SMK630F
SMK630
O-220F-3L
SDB20D45
KSD-T0O043-002
SMK630
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power Diode 800V 5A
Abstract: D09E120 d09e diode MARKING CODE 18A IDP09E120 IEC61249-2-21 Diode 800V 5A
Text: IDP09E120 Fast Switching Diode Product Summary Features VRRM • 1200 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 9 A VF 1.65 V T jmax 150 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant
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IDP09E120
PG-TO220-2
IEC61249-2-21
D09E120
power Diode 800V 5A
D09E120
d09e
diode MARKING CODE 18A
IDP09E120
IEC61249-2-21
Diode 800V 5A
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Untitled
Abstract: No abstract text available
Text: TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 1.4 @ VGS =10V ID (A) 9 General Description The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM9N90
O-220
ITO-220
TSM9N90
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Untitled
Abstract: No abstract text available
Text: SMK09L20D Advanced LOGIC N-Ch MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features • PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=17pF(Typ.) Low gate charge : Qg=9nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.)
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SMK09L20D
O-252
09L20
KSD-T6O022-000
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Untitled
Abstract: No abstract text available
Text: SUN09A65F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =0.7Ω (Typ.) Low gate charge: Qg=33nC (Typ.) Low reverse transfer capacitance: Crss=13pF (Typ.) Lower EMI noise RoHS compliant device
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SUN09A65F
SUN09A65
O-220F-3L
SDB20D45
10-JUL-14
KSD-T0O162-000
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Untitled
Abstract: No abstract text available
Text: SMN09L20D Advanced LOGIC N-Ch MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features • PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=17pF(Typ.) Low gate charge : Qg=9nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.)
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SMN09L20D
SMN09L20
O-252
09L20
KSD-T6O024-000
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SMK0965
Abstract: SMK0965F 9a diode marking code
Text: SMK0965F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • PIN Connection High Voltage : BVDSS=650V Min. Low Crss : Crss=16pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.85Ω(Max.) D G Ordering Information
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SMK0965F
SMK0965
O-220F-3L
SMK0965
SMK0965F
9a diode marking code
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D09E60
Abstract: IDB09E60 IDP09E60 PG-TO263-3-2 9A MARKING diode 343 18a
Text: IDB09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C PG-TO263-3-2 • Low forward voltage • 175°C operating temperature
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IDB09E60
PG-TO263-3-2
D09E60
D09E60
IDB09E60
IDP09E60
PG-TO263-3-2
9A MARKING
diode 343 18a
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