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    9T TRANSISTOR Search Results

    9T TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    9T TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DSKTJ05

    Abstract: transistor code book FET MARKING CODE
    Text: DSKTJ05 Tentative Total pages page DSKTJ05 Silicon N-channel junction FET For AF impedance converter Marking Symbol : 9S, 9T Package Code : TSSSMini3-F2-B Absolute Maximum Ratings Ta = 25 °C Parameter Drain-source voltage Gate open Drain-gate voltage(Source open)


    Original     		PDF DSKTJ05 DSKTJ05 transistor code book FET MARKING CODE

    2N1035

    Abstract: 2N1028 2N1025 2N1036 2N1037 2N1219 2n3298 2N3342 2n328a
    Text: small signal transistors 66 SILICON PNP ALLOY GENERAL PURPOSE TRANSISTORS TYPE NUMBERS 2N 1429 2N 2175 2N 2177 2N 1119 2N 1028 2N 1228 SHA 7532 2N 1229 SHA 7536 2N 1024 2N 1027 2N 3342 2N 3343 2N 1118 2N 1118A 2N 1643 2N 1222 2N 1221 2N 1220 2N 1219 2N 3344


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PANASONIC INDL/ELEK -CIC3- 72 6932852 PANASONIC INOLfELECTRONIC D E I b *132052 OODflSn T 72C 08599 0 T-P&ZT fl\l AN 90 B 00/A N 90 BOOS Series |C A N 90B00/A N 90B00S Series 7s9 ~F\s-4/"Transistor h7 Arrays • 9t II Unit mm AN90B00 Series Y ÿ 's ;s Ä 9 T i " AN90B00/ÄN90BOOS -> > - X l i , 8 f i '


    OCR Scan     		PDF 90B00/A 90B00S AN90B00 AN90B00/Ã N90BOOS AN90BOOS AN90B00 AN90B00S IEP13 90B80

    Untitled

    Abstract: No abstract text available
    Text: 7 4 " j* > '} r P 7 - F X series Switching Power Transistor « @ is Item ft 9t ^ Sym bol i f t f i C o n d itio n s R a tin g s a. A bsolute Maximum R atings T stg -5 5 -1 5 0 “C Tj 150 °c V cB O 600 V 9W ± V cE O 450 C o lle c to r to E m itte r V o lta g e


    OCR Scan     		PDF 03Sfll

    2SB737

    Abstract: 2SD786 2SD786S 89ji 2Sd786 rohm 2SB737 rohm
    Text: ROHM CO LTD h7 ~ 4QE D 7 a a a ci c ':i o o o s a i a a / T ransistors 2SD786/2SD786S ' 2SD786 2SD786S m rh h 7 ^ 2 7 -0 °) V lJ - 1> K7 > V ^ iW Low Noise Amp. Epitaxial Planar NPN Silicon Transistors 1W ff^ > £ IS l/D im e n s io n s U n it: mm) m r a t' is tttm o


    OCR Scan     		PDF 2SD786 2SD786S 2SD786/2SD786S Rg-100, 55nV//Tir 2SB737 55nVVHz 2SB737. l31/Dimensions 2SD786 2SD786S 89ji 2Sd786 rohm 2SB737 rohm

    sf 128 transistor

    Abstract: 2SK2159 TRANSISTOR SF 128 6GDG TC-7989A
    Text: h ^ > v x & MOS Field Effect Transistor 2SK2159 N MOS FET m 2SK215 9 it 1.5 V i l Ü £ < y<DN3- -V % U , f£ Œ T i ® -? è , m x 'f y i - > 7 m MOS FETT' & w t f o K t-T t '/ c ® , IM & : m m m 4.5 ±0.1 < £ !> '(£ - r i * * 7 ÎC i f W f ê Œ ®


    OCR Scan     		PDF 2SK2159 2SK2159it sf 128 transistor 2SK2159 TRANSISTOR SF 128 6GDG TC-7989A

    9T TRANSISTOR

    Abstract: 75451 ttl NAND gate circuit TO-99 DTL Fairchild TO-100 8pin tic 122 75452 8T23 8T24
    Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE 115 55/75325 116 55/75430, 55/75450, 55/75460 117 55/75431, 55/75451 55/75461, 55/75471 SOURCE 118 55/75432, 55/75452, 55/7562, 55/7572 121 8T13, 8T23, 55/75121, 75123 119 55/75433, 55/75453, 55/75463, 55/75473


    OCR Scan     		PDF

    74LS247

    Abstract: 75492 TTL 74ls247 ttl 74141 9T TRANSISTOR 74LS248 MA5558 D135 D141 D143
    Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE I26 75492, 9664 124 9613 [14 □ 13 □ 12 □ 11 □ 10 □ 9 □ 8 □ 8 OUTPUT A □ Vcc □ OUT B 7 2 +IN A Q 3 -IN A ^ 4 GND 6 □ +IN B 5 □ -IN B 2 OUT D Vss OUT C OUT C IN C I27 I28 mA5SS 131 7528, 7529


    OCR Scan     		PDF mA2240 mA555 74LS247 75492 TTL 74ls247 ttl 74141 9T TRANSISTOR 74LS248 MA5558 D135 D141 D143

    2SC388A

    Abstract: transistor 388A transistor 2sc388a Bf 148 TRANSISTOR APC300 AD140 2SC388-A
    Text: 2SC 388A ^ U D y N P N T ^ 5 > ^ S y P J I y 7 l y - t B h ÿ y ^ X 9 ^ O fHÍHPfílgWffl o TV Picuture _ SILICON NPN EPITAXIAL PLANAR TRANSISTOR XP Final Stage Ampl i f i e r A p p l ications • Ä W § r-t; Ope = 3 3 d B Typ. Ic = 4 ~ 1 6 m A MAXIMUM RATINGS


    OCR Scan     		PDF 45MHz) 100MHz) 2sc388A 2SC388A transistor 388A transistor 2sc388a Bf 148 TRANSISTOR APC300 AD140 2SC388-A

    2SB737

    Abstract: 2SD786 251D J802 MAS 560 2Sb737 transistor
    Text: 40E D ROHti co Ltd 7 ä2ö * m h "7 > y X £ / T ransistors 0Q054Ö3 3 B R H M 2S B 737 : 737 7 ^ 2 7 -0 ? •fÊ rbb' i £ i l ^ i i Î i Æ / L o w rbb' Low Noise Amp. Epitaxial Planar PNP Silicon Transistor • ÿfJfi"î}‘^ l 3 / ' Dinrïensions • mm


    OCR Scan     		PDF 2SB737 55nV//Hz 2SD786 55nV/VHz 2SD786. SC-43 251D J802 MAS 560 2Sb737 transistor

    IC-8844

    Abstract: PA670 PA670T SC-70A
    Text: "t — ^7 • f y — h v ' J h ^ > V X ^ Silicon Transistor = I > UPA670T N P N X t f t $ r d e '> 77; ^ V ,; = l > h 7 > v x ^ 6 f c f > 2 l§ IS & juPA670T t t , h 7 > V X £ i 2[SS£p*3j& U tz 5. - =E- Jl> K f / w z - r & y , ( U f i : •■ m m )


    OCR Scan     		PDF uPA670T juPA670T SC-70/' O//PA671 IC-8844 PA670 PA670T SC-70A

    Untitled

    Abstract: No abstract text available
    Text: 2SA1862F5 h 7 > V ^ £ /Transistors 2SA 1862F5 E i s s i y u - t m pnp y u □ > h ? > v * $ Triple Diffused Planar PNP Silicon Transistor High Voltage Switching For Telephone Switching Power Suppliers • ^• '\t'3s0/Dimension8 (U nit: mm) 1) s iB ffT ife S o


    OCR Scan     		PDF 2SA1862F5 1862F5 --400V 100mA) 2SA1862F5

    2SC4713K

    Abstract: 2SC4774 T106 T146 T147
    Text: h 7 > i / 7, £ /Transistors 2SC 4713K 2S C 4774 2SC4713K/2SC4774 Epitaxial Planar NPN Silicon Transistor raJS /R F Amplifier • ^M ^i& E I/D in ien sio n s Unit : mm 1) Ron 2) • Features 1) Very low output on-state resist­ ance. 2) Low capacitance.


    OCR Scan     		PDF 2SC4713K/2SC4774 2SC4713K 2SC4774 2SC4713K SC-59 SC-70 100mVrms 2SC4774 T106 T146 T147

    2SC4137

    Abstract: 2SC4137V
    Text: f" " 7 > V $ /T ra n sisto rs 2SC4137 2SC4137 NPN ' > '; = ! > Epitaxial Planar NPN Silicon Transistor f lJ Í # i Í lÜ // H¡gh Gain Amp. b7>yz$ ^♦•Jfí'+üHI/Dimensions Unit: mm 1) hFE 7 .8 ± 0 . ? 3 .210 .2 * ¿ 3.3 2) □ V O £ • I 5 y -Z fflm n M IZ


    OCR Scan     		PDF 2SC4137 2SC4137 2SC4137V

    7974a

    Abstract: 2SD2403
    Text: ïr — ^ — h '> U =1 > h Silicon Transistor 2SD2403 N P N itf^ v T ^ u ^ v U ju r a « : * « « , 2 S D 2 4 0 3 t t /J 't ë fl» a a* 6 U W x '- ÿ ^ ï - * m m z i> ' p m m x ' f v i - x r m t •# U T * U , D C / D C w m m e : m m ) • K 7 < / * £ iî lC » l? T o


    OCR Scan     		PDF 2SD2403 2SD2403U 7974a 2SD2403

    NEC-MH

    Abstract: 2SJ206 ITT DIODE W7 ITT DIODE W7 pt A305
    Text: 7 s— S • S /— h NEC MOS M O S Field E ffect Transistor 2SJ206 P ^ ^ ÌV MOS FE T w-mm m t : m m 2 S J 2 0 6 Ü P f - - r ^ ;H tiiM O S F E T T ',5 V t t ïI * I C < 7 ) f Ü * ^ i s W M m W t f r * ï f â % x >f "/ f - > / K i T t . * M O S F E T iif£«)±T "!§g T “è ,


    OCR Scan     		PDF 2SJ206 2SJ206Ã NEC-MH 2SJ206 ITT DIODE W7 ITT DIODE W7 pt A305

    EB-230

    Abstract: PA603T mpa603t 048164 IC830
    Text: MOS MWRlto MOS Field Effect Transistor «PA603T U MOS F E T 6 fc> 2 0 S&) P ¿¿PA603T (ä, M OS F E T £ 2 H Jj& f ijl Ltz l ~ £ f 7f £ H I (^ -fï ‘ mm) & 4# o SC-59 ¿[p] L'+f'f Xcos'?"/ Y — 'si MOS F E T £ 2 H i& f lji 0.95 o ¿/PA602T t 3 > 7 ° ij / 's 9 ') T"i£ffl^Tit£


    OCR Scan     		PDF uPA603T PA603T SC-59 /PA602T EB-230 PA603T mpa603t 048164 IC830

    Untitled

    Abstract: No abstract text available
    Text: -7— 5 7 -S / — h NEC ^ M O S rÆ ^ » < 9 M O S Field Effect Pow er Transistors 2SK1 284,1 284-Z N ?-V *JU y ^ — MOS F E T x i f f l 2 S K 1 2 8 4 / 1 2 8 4 - Z ¡±, N f f i ; u > A y x ^ MOS FETT”, 5 V IC 7 ,'h* 4'iSjitX -i •/ -f > 9 " Y ' < - i X T'"to


    OCR Scan     		PDF 284-Z 2SK1284-Z 2SK1284-Z

    JI32

    Abstract: 1037ak
    Text: 2SA1037AK/2SA1576A/2SA1774 h ~7 > V ^ £ / T ransistors 2 S A 1 0 3 7 A K / 2 S A 1 5 7 6 A 2 S A 1 7 7 4 '> > ; = ! > h - 7 > V * $ Epitaxial Planar PNP Silicon Transistors — flS'htl-^-iififfl/General Small Signal Amp. • N F = 0.5dB Typ. 2S A 1037A K


    OCR Scan     		PDF 2SA1037AK/2SA1576A/2SA1774 2SC2412K/2SC4081 /2SC4617 /2SC4617. SC-59 JI32 1037ak

    dvr circuit diagram

    Abstract: 74LS247 ttl 74141 TTL 74ls247 74LS248 74LS249 75431 8T13 8T14 8T24
    Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE 115 55/75325 116 55/75430, 55/75450, 55/75460 117 55/75431, 55/75451 55/75461, 55/75471 SOURCE 118 55/75432, 55/75452, 55/7562, 55/7572 121 8T13, 8T23, 55/75121, 75123 119 55/75433, 55/75453, 55/75463, 55/75473


    OCR Scan     		PDF

    2SC4771K

    Abstract: sn9t
    Text: h 2SC4771K/2SC4772 Transistors 2 S C 4 7 7 1 K ^tf^^V7^7°U-^NPN Epitaxial Planar N PN Silicon Transistor 2 S C 4 7 7 2 Ü H>J& ü1iffl/RF Amplifier • i'W fi^ & H /D im e n s io n s Unit : mm • W * 1) C Ob=0.95pF(VcB=10V) • Features 1) Low output capacitance.


    OCR Scan     		PDF 2SC4771K/2SC4772 2SC4772 2SC4771K 2SC4772 sn9t

    DTL Fairchild

    Abstract: 75450 8T14 tic 122 8T13 8T23 8T24 SH2001 SH2002 SH2200
    Text: FAIRCHILD LO G IC /C O N N EC TIO N DIAGRAMS INTERFACE 115 55/75325 116 55/75430, 55/75450, 55/75460 117 55/75431, 55/75451 55/75461, 55/75471 SOURCE 118 55/75432, 55/75452, 55/7562, 55/7572 121 8T13, 8T23, 55/75121, 75123 119 55/75433, 55/75453, 55/75463, 55/75473


    OCR Scan     		PDF SH2001 O-100 SH2002 SH2200 SH2201 SH3011* DTL Fairchild 75450 8T14 tic 122 8T13 8T23 8T24

    transistor DK qj

    Abstract: JKS-45 SE-49
    Text: 5 s— S 7 • 5 /— h Compound Transistor BN1L3N 4# $ fB iU « ^ - j ì '. mm 2.0 + 0.2 0 '< - f T x f f i i a è r t J l L T ^ É l ' o f ( R i = 4.7 k£2, R 2= 10 k£2) 4— 6‘ o 2 4k1 =i > V" >J 9 > 9 'J o BA 1L3N £ (T II a Tè £t = 25 °C ) @


    OCR Scan     		PDF PWS10 CycleS50 010i-flIDUlrNi-No transistor DK qj JKS-45 SE-49

    IC-8843

    Abstract: PA574T uPA574T JUPA574T uA574 uPA574 ufc 101 TK01
    Text: Silicon Transistor ii N P N / //P A 5 7 4 m , h 7 > v X « 2 0 ï§ r tM Ü /c 5 P N i ^ P K PA574T I 5fc?>2Hï S *W B H « M it : mm ) U îto «=JJ $ Ò l o # oSC -70/’f "j fr —v ¿(H U if -f X(7)/\°7 ¿t —v t z h 7 > V *£ £ 2 0 5 & F *3 M ( I Î 7 Î 3 Î »


    OCR Scan     		PDF uPA574T IEI-620) IC-8843 PA574T JUPA574T uA574 uPA574 ufc 101 TK01