Relay 5V DC - 2P, 1C, 10A
Abstract: relay 5v 250v
Text: Relay MiniAture Power relay - Type RPS R sERIES Introduction: Adam Tech RPS relays are modern PCB low power relays. Sometimes known as ‘Sugar Cube’ relays, these small relays can switch loads up to 10 amps. They are available in 1 form A, and 1 form C contact formats within a sealed package. These relays
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360mW
Relay 5V DC - 2P, 1C, 10A
relay 5v 250v
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OMRON G2V-2 12V relay
Abstract: spdt 6v 1a relay 5V SPDT relay relay 12V, 70A OMRON G2V-2 6V relay dry contact relay 220V SRD 12VDC SL C MATSUA compressor codes 12V 30A PCB RELAY spdt relays 12v
Text: Relays New products … from the following brands: Automotive Relays PCB Relay Sockets PCB Relays Photomos Relays Plug-in Power Relays Reed Relays Solid State Relays Surface Mount 693 693 674 671 695 670 698 671 24 Top sellers High Sensitivity Relay SPDT 1A
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100mA
OMRON G2V-2 12V relay
spdt 6v 1a relay
5V SPDT relay
relay 12V, 70A
OMRON G2V-2 6V relay
dry contact relay 220V
SRD 12VDC SL C
MATSUA compressor codes
12V 30A PCB RELAY
spdt relays 12v
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relay TRD 24v dc
Abstract: 600VA AT20 tv-5 relay
Text: TRD TRDT with TV-5 Approval n MAIN FEATURES • Switching capacity available by 12A in spite of small size design for high density P.C. board mounting technique. · UL/CSA recognized. TRDT TV-5 Approval . · Selection of plastic material for high temperature and better chemical solution
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250VAC
28VDC
120VAC
relay TRD 24v dc
600VA
AT20
tv-5 relay
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IRF9530 mosfet
Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs [ /Title These are P-Channel enhancement mode silicon gate power IRF95 field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified
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IRF9530,
RF1S9530SM
IRF95
530SM
IRF9530 mosfet
IRF9530
RF1S9530
RF1S9530SM
RF1S9530SM9A
TB334
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schematic diagram 230VAC to 24VDC POWER SUPPLY
Abstract: 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P
Text: farnell.com element14.com 2501 Relays & Solenoids Page 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . . High Frequency Relays . . . . . . . . . . . . . . . . . . . . . Interface Relays . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element14
schematic diagram 230VAC to 24VDC POWER SUPPLY
48V 30A SPDT RELAY
IM03D
PCH-124
N mosfet 250v 600A
VARISTOR 275 L20
PA66 - GF 25 relay
marking code W16 SMD Transistor
90W 19.5V Power Adapter pcb
G6CU-2117P
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IRF9530 mosfet
Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334 JEDEC TO-263A IRF9530 fairchild
Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of
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IRF9530,
RF1S9530SM
TA17511.
IRF9530 mosfet
IRF9530
RF1S9530
RF1S9530SM
RF1S9530SM9A
TB334
JEDEC TO-263A
IRF9530 fairchild
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relay nt73
Abstract: IEC255-19-1 IEC255 5A 250VAC 10DC12V 10DC1 NT73 NT732AS
Text: NT73 -2 CH0050406-2000 E169380 19.3 x15.6×15.3 R9858271 Patent No. 95 2 18643.8 Features n n n n Small size, light weight, heavy reverse power. Low coil power consumption. PC board mounting. Suitable for automation control, telecommunication equipment, household electrical appliance and machinery electrical
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CH0050406-2000
E169380
R9858271
5A/125VAC
28VDC
0A/125VAC
16VDC;
A/277VAC
0A/250VAC
A/250VAC,
relay nt73
IEC255-19-1
IEC255 5A 250VAC
10DC12V
10DC1
NT73
NT732AS
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cgs resistor
Abstract: RFP12N08 rfm12 ic 6 pin diode n10 RFM12N08 RFM12N10 RFP12N10 TB334 833ig
Text: RFM12N08, RFM12N10, RFP12N08, RFP12N10 Semiconductor Data Sheet 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs [ /Title RFM12 These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such N08, RFM12 as switching regulators, switching converters, motor drivers,
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RFM12N08,
RFM12N10,
RFP12N08,
RFP12N10
RFM12
RFP12
TA09594.
RFM12N08
cgs resistor
RFP12N08
rfm12 ic
6 pin diode n10
RFM12N08
RFM12N10
RFP12N10
TB334
833ig
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NTE2312
Abstract: 220v 2a transistor
Text: NTE2312 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2312 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high– speed power switching inductive circuits where fall time is critical. This device is particularly suited
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NTE2312
NTE2312
220v 2a transistor
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Untitled
Abstract: No abstract text available
Text: RFP12P08, RFP12P10 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs Title The RFP12P08, and RFP12P10 are P-Channel FP1 enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, 08,
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RFP12P08,
RFP12P10
RFP12P10
TA17511.
RFP12P08
O-220AB
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NTE51
Abstract: 75W NPN TO220
Text: NTE51 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE51 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high– speed power switching inductive circuits where fall time is critical. This device is particularly suited
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NTE51
NTE51
75W NPN TO220
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transistor BUZ20
Abstract: buz20s TA17411 mos n fet e 75w BUZ20 TB334
Text: BUZ20 Semiconductor Data Sheet 12A, 100V, 0.200 Ohm, N-Channel Power MOSFET October 1998 File Number 2254.1 Features • 12A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.200Ω (BUZ20 field effect transistor designed for applications such as
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BUZ20
BUZ20
TA17411.
transistor BUZ20
buz20s
TA17411
mos n fet e 75w
TB334
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MJF13009
Abstract: 9v dc motor dc motor control circuit 220v dc 220V DC circuits motor control
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJF13009 DESCRIPTION •Collector–Emitter Sustaining Voltage : VCEO SUS = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Switching Time : tf= 0.7 s(Max.)@ IC= 8.0A
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MJF13009
MJF13009
9v dc motor
dc motor control circuit 220v dc
220V DC circuits motor control
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mje13009 equivalent
Abstract: 2N2222 SOA mje13009l MJE13009L-T3P-T QW-R214-011 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data
Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They
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MJE13009
MJE13009
MJE13009L
QW-R214-011
mje13009 equivalent
2N2222 SOA
mje13009l
MJE13009L-T3P-T
2n2222 transistor pin b c e
3V to 350V dc dc converter
MJE13009-T3P-T
2N2222 transistor output curve
free transistor and ic equivalent data
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mje13009l
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They
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MJE13009
MJE13009
QW-R214-011
mje13009l
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mje13009
Abstract: MJE-13009 mje13009 equivalent
Text: SavantIC Semiconductor Product Specification MJE13009 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/
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MJE13009
mje13009
MJE-13009
mje13009 equivalent
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MJE13009
Abstract: MJE-13009 mje13009 equivalent
Text: SavantIC Semiconductor Product Specification MJE13009 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/
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MJE13009
O-220C
MJE13009
MJE-13009
mje13009 equivalent
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MJE13009
Abstract: MJE130 MJE-13009 mje13009 equivalent MJE1300 mje13009 SWITCHING FREQUENCY
Text: Inchange Semiconductor Product Specification MJE13009 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed APPLICATIONS ・Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/
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MJE13009
O-220C
MJE13009
MJE130
MJE-13009
mje13009 equivalent
MJE1300
mje13009 SWITCHING FREQUENCY
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mjf13009
Abstract: No abstract text available
Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 usA TELEPHONE: 973 376-2922 (212)227-6005 MJF13009 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) • Collector Saturation Voltage :VCE(sat) = 1.5(Max)@l c =8.0A
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MJF13009
O-220F
mjf13009
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24N100
Abstract: 23N10 125OC
Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
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24N100
23N100
24N100
23N100
OT-227
E153432
125oC
23N10
125OC
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.41 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
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24N100
23N100
24N100
23N100
OT-227
E153432
125oC
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;
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24N100
23N100
24N100
23N100
OT-227
E153432
125oC
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relay 12 volt
Abstract: diode SM 88A 12 VOLT 2 AMP regulator diode ESM 15 MODEL SA 12 volt 10 amp relay 12 volt relay 100 volt 60 amp to 220
Text: features Four useful power rails in one package Rugged construction Universal mains input Overvoltage Protection on all 5 volt rails “ Off the shelf” availability description The "ESM" Series of System Power Units have been developed to meet the general requirements of hybrid analogue/digital systems
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MIL217B
relay 12 volt
diode SM 88A
12 VOLT 2 AMP regulator
diode ESM 15
MODEL SA
12 volt 10 amp relay
12 volt relay
100 volt 60 amp to 220
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Untitled
Abstract: No abstract text available
Text: RFP12P08, RFP12P10 Semiconductor June 1999 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators,
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RFP12P08,
RFP12P10
RFP12P10
TA17511.
AN7254
AN7260
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