RFHA1006
Abstract: 0906-4K LQG11A47NJ00
Text: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RFHA1006
225MHz
1215MHz,
RFHA1006
1215MHz
DS120418
0906-4K
LQG11A47NJ00
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EC 401 TRANSISTOR
Abstract: Gan hemt transistor RFMD transistor 1800MHz
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RF3826
30MHz
2500MHz,
RF3826
2500MHz
2500MHz)
EC 401 TRANSISTOR
Gan hemt transistor RFMD
transistor 1800MHz
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Untitled
Abstract: No abstract text available
Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RFHA1003
30MHz
512MHz,
512MHz
DS120216
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PDF
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Untitled
Abstract: No abstract text available
Text: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RFHA1006
225MHz
1215MHz,
1215MHz
DS120418
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PDF
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RFHA
Abstract: LQG11A47NJ00
Text: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RFHA1006
225MHz
1215MHz,
RFHA1006
1215MHz
DS121114
RFHA
LQG11A47NJ00
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PDF
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transistor 1800MHz
Abstract: No abstract text available
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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Original
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RF3826
30MHz
2500MHz,
2500MHz
2500MHz)
transistor 1800MHz
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PDF
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transistor 1800MHz
Abstract: No abstract text available
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RF3826
30MHz
2500MHz,
RF3826
2500MHz
2500MHz)
transistor 1800MHz
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PDF
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transistor 1800MHz
Abstract: r.f. amplifier 30mhz
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RF3826
30MHz
2500MHz,
2500MHz
2500MHz)
transistor 1800MHz
r.f. amplifier 30mhz
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PDF
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rf3826
Abstract: ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RF3826
30MHz
2500MHz,
RF3826
2500MHz
2500MHz)
ERJ-3GEYJ821
ERJ-3GEYJ391
transistor 1800MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RFHA1003
30MHz
512MHz,
RFHA1003
512MHz
DS120216
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PDF
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404j
Abstract: rf3826 transistor 1800MHz 100A0R9BT150X
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RF3826
30MHz
2500MHz,
RF3826
2500MHz
2500MHz)
404j
transistor 1800MHz
100A0R9BT150X
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PDF
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RFHA1003S2
Abstract: No abstract text available
Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RFHA1003
30MHz
512MHz,
RFHA1003
512MHz
DS121114
RFHA1003S2
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PDF
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RFHA1003SQ
Abstract: 30MHz to 512MHz
Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RFHA1003
30MHz
512MHz,
RFHA1003
512MHz
DS120216
RFHA1003SQ
30MHz to 512MHz
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PDF
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Gan hemt transistor RFMD
Abstract: DS111007 tl 4941
Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9 W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RFHA1003
30MHz
512MHz,
RFHA1003
512MHz
DS111007
Gan hemt transistor RFMD
DS111007
tl 4941
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PDF
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TRIPATH TECHNOLOGY
Abstract: TAA2009 AA2009 Tripath Amplifier EB-TAA2009 TRIPATH TA2024 TA2024 application note capacitor 100uF/16V TRIPATH TA2024
Text: Tripath Technology, Inc. - Technical Information TAA2009 STEREO 9W 8Ω CLASS-T DIGITAL AUDIO AMPLIFIER USING DIGITAL POWER PROCESSING™ TECHNOLOGY TECHNICAL INFORMATION Revision 1.02 – May 2006 GENERAL DESCRIPTION The TAA2009 is a 9W/ch continuous average two-channel Class-T Digital Audio Power Amplifier IC
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TAA2009
TAA2009
TAA2009,
TRIPATH TECHNOLOGY
AA2009
Tripath Amplifier
EB-TAA2009
TRIPATH
TA2024
TA2024 application note
capacitor 100uF/16V
TRIPATH TA2024
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NICHICON UD
Abstract: TA2024B panasonic plasma tv circuit diagram motorola .5w zener diodes nichicon 22H UD potentiometer 5k ohm pcb mount Panasonic FM series 2.2uF 10V electrolytic capacitor TAA2008 MBRS130T3
Text: Tri path Technol og y, I nc. - Techni cal I nformation TAA2008 STEREO 9W 8Ω CLASS-T DIGITAL AUDIO AMPLIFIER USING DIGITAL POWER PROCESSING™ TECHNOLOGY TECHNICAL INFORMATION Revision 1.0 – May 2006 GENERAL DESCRIPTION The TAA2008 is a 9W/ch continuous average two-channel Class-T Digital Audio Power Amplifier IC
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TAA2008
TAA2008
TAA2008,
NICHICON UD
TA2024B
panasonic plasma tv circuit diagram
motorola .5w zener diodes
nichicon 22H UD
potentiometer 5k ohm pcb mount
Panasonic FM series
2.2uF 10V electrolytic capacitor
MBRS130T3
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PDF
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NICHICON UD
Abstract: TAA2008 AES17 EB-TAA2008 MBRS130T3 TA2024B TRIPATH TA2024B sustain circuits for plasma tv panasonic plasma tv circuit diagram
Text: Tri path Technol og y, I nc. - Techni cal I nformation TAA2008 STEREO 9W 8Ω CLASS-T DIGITAL AUDIO AMPLIFIER USING DIGITAL POWER PROCESSING™ TECHNOLOGY TECHNICAL INFORMATION Revision 1.1 – September 2006 GENERAL DESCRIPTION The TAA2008 is a 9W/ch continuous average two-channel Class-T Digital Audio Power Amplifier IC
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TAA2008
TAA2008
TAA2008,
NICHICON UD
AES17
EB-TAA2008
MBRS130T3
TA2024B
TRIPATH TA2024B
sustain circuits for plasma tv
panasonic plasma tv circuit diagram
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PDF
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power supply DVD schematic diagram
Abstract: TNY267P DVD TNY267P DVD power supply EE25L dvd board china DVD player power circuit diagram EEL25 equivalent mm to awg magnet wire TNY267
Text: Design Example Report Title 9W power supply using TNY267P Input: 85 – 265 VAC Specification Output: 5V/0.56A, 3.3V/0.48A, 12V/100mA, -12V/15mA, -22V/100mA, Floating 4V/100mA Application DVD Player Author Power Integrations Applications Department Document
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TNY267P
2V/100mA,
-12V/15mA,
-22V/100mA,
V/100mA
TL431
17F-3,
power supply DVD schematic diagram
TNY267P DVD
TNY267P
DVD power supply
EE25L
dvd board
china DVD player power circuit diagram
EEL25
equivalent mm to awg magnet wire
TNY267
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PDF
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power supply DVD schematic diagram
Abstract: TOP267 TDK Y-CAP TNY267P TNY267P DVD KMG10VB100M TNY267 DVD power supply KMG50VB10M power supply dvd player china
Text: Design Example Report Title 9W power supply using TNY267P Input: 85 – 265 VAC Specification Output: 5V/0.75A, 3.3V/0.5A, 12V/100mA, -12V/10 mA, -23V/10 mA, Floating 3V/100 mA Application DVD Player Author Power Integrations Applications Department Document
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TNY267P
2V/100mA,
-12V/10
-23V/10
V/100
TL431
17F-3,
power supply DVD schematic diagram
TOP267
TDK Y-CAP
TNY267P
TNY267P DVD
KMG10VB100M
TNY267
DVD power supply
KMG50VB10M
power supply dvd player china
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PDF
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cha7215
Abstract: x-Band High Power Amplifier
Text: CHA7215 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description VG1R VD1 VG2R ● ● The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power
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CHA7215
CHA7215
19dBm
DSCHA72159287
x-Band High Power Amplifier
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x-Band High Power Amplifier
Abstract: CHA7215
Text: CHA7215 X-band High Power Amplifier GaAs Monolithic Microwave IC Vg3 Description Vd3 Vd2 The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power associated to 36% power added efficiency at
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CHA7215
CHA7215
19dBm
DSCHA72159040
x-Band High Power Amplifier
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PDF
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RFHA1003S2
Abstract: No abstract text available
Text: RFHA1003 RFHA1003 9W GaN Wide-Band Power Amplifier 30MHz to 512MHz The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density
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RFHA1003
30MHz
512MHz
RFHA1003
DS131018
RFHA1003S2
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PDF
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transistor 1800MHz
Abstract: No abstract text available
Text: RF3826 RF3826 9W GaN Wide-Band Power Amplifier 30MHz to 2500MHz The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios, and general purpose amplification. Using an advanced high power density Gallium
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RF3826
30MHz
2500MHz
RF3826
DS130927
transistor 1800MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: NEZ7177-8D C-BAND POWER GaAs MESFET NEZ7177-4D NEZ7177-4DD OUTPUT POWER AND EFFICIENCY vs. INPUT POWER FEATURES HIGH P o u t 9W 39.5 dBm Typ PidB for NEZ7177-8D/8DD 4.5W (36.5 dbm) Typ PidB for NEZ7177-4D/4DD HIGH EFFICIENCY 33% TlADD for 4.5W Device 31% tiadd for 9W Device
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OCR Scan
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NEZ7177-8D
NEZ7177-4D
NEZ7177-4DD
NEZ7177-8D/8DD
NEZ7177-4D/4DD
l31dS
NEZ7177-4D-0
S12S21|
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PDF
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