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Catalog Datasheet	MFG & Type	Document Tags	PDF
MOSFET Abstract: No abstract text available Text: ACE636B Common Drain Dual N-Channel Enhancement Mode Field Effect Description Advanced trench process technology. High Density Cell Design For Ultra Low On-Resistance. High Power and Current handing capability. Fully Characterized Avalanche Voltage and Current. Small Surface	Original	ACE636B MOSFET	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

MOSFET

Abstract: No abstract text available
Text: ACE636B Common Drain Dual N-Channel Enhancement Mode Field Effect Description Advanced trench process technology. High Density Cell Design For Ultra Low On-Resistance. High Power and Current handing capability. Fully Characterized Avalanche Voltage and Current. Small Surface

Original

ACE636B MOSFET

PDF