AO4401 Search Results

AO4401 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AO4401		Unknown	P-Channel Enhancement Mode Field Effect Transistor		Original	PDF

AO4401 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
AO4401 Abstract: ao4800 Text: July 2001 AO4401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4401 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM	Original	AO4401 AO4401 AO4400 AO4800 AO4801 AO4700 AO4701 ao4800	PDF
AO4403 Abstract: 4801 soic8 AO4400 Text: December 2001 AO4403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4403 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM	Original	AO4403 AO4403 AO4400 AO4401 AO4800 AO4801 AO4700 AO4701 4801 soic8 AO4400	PDF
AO4402 Abstract: AO4800 mpf201 AO4400 AO4401 Text: March 2002 AO4402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4402 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM	Original	AO4402 AO4402 AO4400 AO4401 AO4800 AO4801 AO4700 AO4701 AO4800 mpf201 AO4400 AO4401	PDF
AO4400 Abstract: AO4401 AO4800 Text: July 2001 AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in	Original	AO4800 AO4800 AO4400 AO4401 AO4801 AO4700 AO4701 AO4400 AO4401	PDF