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    APT10M11LVR Price and Stock

    Microchip Technology Inc APT10M11LVRG

    MOSFET N-CH 100V 100A TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT10M11LVRG Tube 20 1
    • 1 $39.85
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    • 100 $34.4001
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    Avnet Americas APT10M11LVRG Tube 26 Weeks 20
    • 1 -
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    • 100 $32.8486
    • 1000 $32.20466
    • 10000 $32.20466
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    Mouser Electronics APT10M11LVRG
    • 1 $39.85
    • 10 $39.85
    • 100 $34.4
    • 1000 $34.4
    • 10000 $34.4
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    Newark APT10M11LVRG Bulk 20
    • 1 $39.85
    • 10 $39.85
    • 100 $34.4
    • 1000 $32.33
    • 10000 $32.33
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    Microchip Technology Inc APT10M11LVRG Tube 26 Weeks
    • 1 $39.85
    • 10 $39.85
    • 100 $34.4
    • 1000 $31.57
    • 10000 $30.53
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    Onlinecomponents.com APT10M11LVRG
    • 1 -
    • 10 $38.8
    • 100 $35.49
    • 1000 $35.49
    • 10000 $35.49
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    TME APT10M11LVRG 1
    • 1 $57.61
    • 10 $45.81
    • 100 $45.81
    • 1000 $45.81
    • 10000 $45.81
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    NAC APT10M11LVRG Tube 9
    • 1 $36.96
    • 10 $36.96
    • 100 $34.04
    • 1000 $31.55
    • 10000 $31.55
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    Richardson RFPD APT10M11LVRG 20
    • 1 -
    • 10 -
    • 100 $34.17
    • 1000 $34.17
    • 10000 $34.17
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    Master Electronics APT10M11LVRG
    • 1 -
    • 10 $38.8
    • 100 $35.49
    • 1000 $35.49
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    APT10M11LVR Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT10M11LVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF

    APT10M11LVR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT10M11LVR

    Abstract: No abstract text available
    Text: APT10M11LVR 0.011Ω 100V 100A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    PDF APT10M11LVR O-264 O-264 APT10M1LVR APT10M11LVR

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR

    Untitled

    Abstract: No abstract text available
    Text: A P T 10M 11 LV R A dvanced W 7Æ P o w e r Te c h n o l o g y ioov 100a 0.01m POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


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    PDF O-264 APT10M1LVR

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


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    PDF APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr

    Untitled

    Abstract: No abstract text available
    Text: A dvanced W.\A p o w e r Te c h n o lo g y " • R A P T 1 0 M 11 LVR ioov 100a 0.01 i q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    PDF O-264 APT10M1LVR

    Untitled

    Abstract: No abstract text available
    Text: A P T 1 0 M 1 1 LVR A dvanced P o w er Te c h n o lo g y ioov 100a 0.01m POWER M OSV Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs, This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


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    PDF O-264 APT10M1LVR 500yH. O-264AA