Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    APT43GA90S Search Results

    APT43GA90S Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT43GA90S Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3 [S]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 43; Original PDF
    APT43GA90SD30 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 43; Original PDF

    APT43GA90S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: APT43GA90B APT43GA90S 900V High Speed PT IGBT B POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT43GA90B APT43GA90S PDF

    diode schottky 600v

    Abstract: No abstract text available
    Text: APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT43GA90BD30 APT43GA90SD30 diode schottky 600v PDF

    Untitled

    Abstract: No abstract text available
    Text: APT43GA90B APT43GA90S 900V High Speed PT IGBT B POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT43GA90B APT43GA90S Ver81 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT43GA90BD30 APT43GA90SD30 TYP11 PDF

    RECTIFIER DIODE 1000A schottky

    Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT43GA90BD30 APT43GA90SD30 MIC4452 SD30
    Text: APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT43GA90BD30 APT43GA90SD30 TYPI67 RECTIFIER DIODE 1000A schottky Fast Recovery Bridge Rectifier, 60A, 600V APT43GA90BD30 APT43GA90SD30 MIC4452 SD30 PDF

    APT43GA90B

    Abstract: APT43GA90S MIC4452 117 IC 100-C43
    Text: APT43GA90B APT43GA90S 900V High Speed PT IGBT B POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT43GA90B APT43GA90S APT43GA90B APT43GA90S MIC4452 117 IC 100-C43 PDF