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    DIODE S4 59A

    Abstract: diode t25 4 G6 diode t25 4 G5
    Text: APTC90TDUM60TPG Triple dual Common Source Super Junction MOSFET Power Module VDSS = 900V RDSon = 60mΩ max @ Tj = 25°C ID = 59A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies Features •


    Original     		PDF APTC90TDUM60TPG DIODE S4 59A diode t25 4 G6 diode t25 4 G5

    S4 59A

    Abstract: SP6-P DIODE S4 59A DIODE S4 52a S4 52A APT0406 APT0502 MAX5944 s4 52a diode
    Text: APTC90TDUM60TPG Triple dual Common Source Super Junction MOSFET Power Module VDSS = 900V RDSon = 60mΩ max @ Tj = 25°C ID = 59A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies Features •


    Original     		PDF APTC90TDUM60TPG S4 59A SP6-P DIODE S4 59A DIODE S4 52a S4 52A APT0406 APT0502 MAX5944 s4 52a diode

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter