Untitled
Abstract: No abstract text available
Text: Am27Cl024 6 5 ,5 3 6 x 1 6-Bit CMOS EPROM Am27C1024 PRELIMINARY DISTINCTIVE CHARACTERISTICS • • Fast access time — 200 ns Low-power dissipation - 250 mW at 5_MHz - 1 mW at E CE = V cc ±0.3 • • • • Programming voltage— 12.5 ±0.3 V First EPROM offering 16-bit inputs and outputs
|
OCR Scan
|
Am27Cl024
Am27C1024
16-bit
10-ms
|
PDF
|
am27c1024
Abstract: am27c1024 amd
Text: a Am27C1024 Advanced Micro Devices 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ — 85 ns 100% Fiashrite programming — Typical programming time o l 8 seconds ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to
|
OCR Scan
|
Am27C1024
16-Bit)
40-Pin
44-Pin
KS000010
06780G-8
am27c1024 amd
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FINAL a Advanced Micro Devices Am27C1024 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 85 ns ■ Low power consumption — Typical programming time of 8 seconds ■ Latch-up protected to 100 mA from -1 V to
|
OCR Scan
|
Am27C1024
16-Bit)
40-Pin
44-Pin
KS000010
06780G-8
|
PDF
|
CLV044
Abstract: 56497
Text: ZI FINAL Am27C1024 Advanced Micro Devices 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 70 ns ■ Low power consumption — Typical programming time of 8 seconds ■ Latch-up protected to 100 mA from -1 V to
|
OCR Scan
|
Am27C1024
16-Bit)
40-Pin
44-Pin
8M-7/94-0
06780H
0ES755Ã
CLV044
56497
|
PDF
|
AM27C1024
Abstract: No abstract text available
Text: ADV MI CRO MEMORY b4E D • DES7SEÖ □ □ 3 1 ci 71 5b4 Advanced Micro Devices A m 27C 1024 1 Megabit (6a,536 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ 100% Flashrite programming — 85 ns — Typical programming time of 8 seconds
|
OCR Scan
|
Am27C1024
16-Bit)
40-Pin
44-Pln
ks000010
06780g-8
|
PDF
|
27C1024-90
Abstract: 27C102490
Text: Advanced Micro Devices Am27C1024 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Flashrite programming ■ Fast access time — 85 ns — Typical programming time of 8 seconds ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to
|
OCR Scan
|
Am27C1024
16-Bit)
40-Pin
44-Pin
KS000010
06780G-8
27C1024-90
27C102490
|
PDF
|
WF009504
Abstract: No abstract text available
Text: DV MICRO I 14E MEMORY D I 0557520 DG57425 5 $ Advanced Micro Devices Am27C1024 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • • • ’• • • • • First EPROM offering 16 inputs and outputs Fast access time — 100 ns Low power consumption:
|
OCR Scan
|
DG57425
Am27C1024
16-Bit)
40-pin
44-pad
WF000555
WF009504
|
PDF
|