Untitled
Abstract: No abstract text available
Text: ADV M ICR O -CM EM O R Y} I t D E | 0 B S 7 5 2 fl D OEbM O? Am90CL257 Low-Power 256K x 1 CMOS Static Column Mode DRAM > OVERVIEW 3 The 256K x 1 CMOS Low-Powér 'L' DRAM versions share common functional descriptions, DC and AC characteristics with the corresponding standard CMOS (non-'L1) versions. The only additions to these sections are:
|
OCR Scan
|
Am90CL257
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Am90CL257 Low-Power 256K x 1 CMOS Static Column Mode DRAM OVERVIEW The 256K x 1 CMOS Low-Power 'L ' DRAM versions share com m on functional descriptions, DC and AC characteristics with the corresponding standard CMOS (non-’ L1) versions. The only additions to these sections are:
|
OCR Scan
|
Am90CL257
90CL255
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Am90CL257 Low-Power 256K x 1 CMOS Static Column Mode DRAM DISTINCTIVE CHARACTERISTICS • • Extended refresh period — 32 ms Max. during standby Low data retention current — 230 juA (Max.) • Low-power dissipation — 0.55 mW (Max.) ORDERING INFORMATION
|
OCR Scan
|
Am90CL257
90CL255
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Am 90CL257 OVERVIEW The 256K x 1 CMOS Low-Power ' L' DRAM versions share com m on functional descriptions, DC and AC characteristics with the corresponding standard CMOS (non-'L') versions. The only additions to these sections are: DISTINCTIVE CHARACTERISTICS
|
OCR Scan
|
Am90CL257
Am90CL255
25Max.
|
PDF
|