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    BA130 Price and Stock

    PanJit Group SBA130CS_R1_00001

    SOD-323, SKY
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    DigiKey SBA130CS_R1_00001 Digi-Reel 16,893 1
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    PanJit Group SBA130AS_R1_00001

    SOD-123, SKY
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    DigiKey SBA130AS_R1_00001 Digi-Reel 9,978 1
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    SBA130AS_R1_00001 Cut Tape 9,978 1
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    SBA130AS_R1_00001 Reel 9,000 3,000
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    onsemi NRVBA130LNT3G

    DIODE SCHOTTKY 30V 1A SMA
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    DigiKey NRVBA130LNT3G Reel 5,000 5,000
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    NRVBA130LNT3G Digi-Reel 5,000 1
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    NRVBA130LNT3G Cut Tape 5,000 1
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    Avnet Americas NRVBA130LNT3G Reel 9 Weeks 10,000
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    Mouser Electronics NRVBA130LNT3G 4,946
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    Newark NRVBA130LNT3G Bulk 5,000
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    TME NRVBA130LNT3G 1
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    Avnet Silica NRVBA130LNT3G 10 Weeks 5,000
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    EBV Elektronik NRVBA130LNT3G 11 Weeks 5,000
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    PanJit Group SBA130CH_R1_00001

    EXTREME LOW VF SCHOTTKY RECTIFIE
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    DigiKey SBA130CH_R1_00001 Cut Tape 4,887 1
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    PanJit Group SBA130Q_R1_00001

    DFN1610-2L, SKY
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    BA130 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BA130 L-Com ADAPTOR UHF F/F M Original PDF
    BA130 Fairchild Semiconductor General Purpose Diodes Scan PDF
    BA130 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    BA130 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA130 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    BA130 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BA130 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BA130 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BA130 Unknown Cross Reference Datasheet Scan PDF
    BA130 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BA130 National Semiconductor Diode Pro Electron Series Scan PDF
    BA130 National Semiconductor General Purpose Diodes Scan PDF
    BA130 National Semiconductor Diode - Pro Electron Series Scan PDF
    BA130 Texas Instruments Discrete Devices 1978 Scan PDF
    BA13001 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA13001 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA13001F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA13001F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA13002 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA13002 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    BA130 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BA13002F-E2 IL08 TRANSISTOR ARRAY —TOP VIEW— STB 1 16 VCC IN1 2 15 OUT1 IN2 3 14 OUT2 IN3 4 13 OUT3 IN4 5 12 OUT4 IN5 6 11 OUT5 IN6 7 10 OUT6 GND 8 9 COM


    Original     		PDF BA13002F-E2

    BA13002F

    Abstract: DARLINGTON SINK DRIVER
    Text: Standard ICs Interface driver for microcomputer peripheral and display devices BA13002F The BA13002F is a high current transistor array consisting of six circuits of Darlington transistors. Because it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using inductive loads such


    Original     		PDF BA13002F BA13002F DARLINGTON SINK DRIVER

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original     		PDF K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX

    P-TFBGA63-0911-0

    Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
    Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		PDF TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112

    BA102

    Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
    Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


    Original     		PDF TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96

    BA102

    Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65
    Text: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for


    Original     		PDF TC58FVM6 64MBIT TC58FVM6T2A/B2A 67108864-bit, BA102 TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65

    K8P2815UQB

    Abstract: No abstract text available
    Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB

    BA258

    Abstract: ba146 BA148 ba198 BA204
    Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K8S2815ET 128Mb 44FBGA, 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh

    samsung ba92

    Abstract: BA137 k8p3215
    Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P6415UQB 64-Ball 60Solder samsung ba92 BA137 k8p3215

    diode ba102

    Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
    Text: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		PDF TC58FVT641/B641FT-10 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 diode ba102 BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641

    Untitled

    Abstract: No abstract text available
    Text: Standard ICs Interface driver for microcomputer peripheral and display devices BA13002F The BA13002F is a high current transistor array consisting of six circuits of Darlington transistors. Because it incor­ porates built-in surge-absorbing diodes and base current-control resistors needed when using inductive loads such


    OCR Scan     		PDF BA13002F BA13002F 320mA, 0D21S03 Q021SGH

    BA13002F

    Abstract: 50VlN
    Text: Standard ICs Interface driver for microcomputer peripheral and display devices BA13002F The BA13002F is a high current transistor array consisting of six circuits of Darlington transistors. Because it incor­ porates built-in surge-absorbing diodes and base current-control resistors needed when using inductive loads such


    OCR Scan     		PDF BA13002F BA13002F 320mA, 50VlN

    Untitled

    Abstract: No abstract text available
    Text: Interface driver for microcomputer peripheral and display devices BA13002F The BA13002F is a high c u re n t transistor array consisting of six c rcuits of Darlington transistors. Because >t mcoipcrates built-in surge-absorbing diodes and basa current-controi resistors needed when using inductive leads such


    OCR Scan     		PDF BA13002F BA13002F 320mA, 320mA

    schlumberger

    Abstract: BA128 BA130 A130
    Text: FAIRCHILD SEMICONDUCTOR ” ~ fi4 D E | 34fc.Tb74 0057564 b j ~ T fa ir c h ilB BA128/BA130 *. Mi l A Schlumberger Company General Purpose Diodes PACKAGES BA128 BA130 • W IV. .50 V BA128 , 25 V ( BA130) • ln .100nA (M AX )@ WIV _ 47 DO-35


    OCR Scan     		PDF 34bTb74 A128/B BA128) BA130) 100nA CBA130 100SC schlumberger BA128 BA130 A130

    Untitled

    Abstract: No abstract text available
    Text: Standard ICs Interface driver for microcomputer peripheral and display devices BA13002F The BA13002F is a high current transistor array consisting of six circuits of Darlington transistors. Because it incor­ porates built-in surge-absorbing diodes and base current-control resistors needed when using inductive loads such


    OCR Scan     		PDF BA13002F BA13002F 320mA,

    si 13001 transistor

    Abstract: transistor x 13002 diagram transistor 13001 transistor di 13001 transistor te 13001 13001 HF transistor x 13001 TRANSISTOR si 13001 13001 TRANSISTOR transistor s 13001
    Text: BA13001 /BA13001F/BA13002/BA13002F B A 1 3 0 0 1 / B A 1 3 0 0 1 F B A 1 3 0 0 2 / B A 1 3 0 0 2 F • 7 -r -f □ - 7 i - X Interface Driver for Microcontroller Peripherals and Displays • i f E l / D i m e n t i o n s Unit : mm BA13001, B A 13002, BA13001F, B A 13002F IJ,


    OCR Scan     		PDF BA13001 /BA13001F/BA13002/BA13002F BA13001, BA13001F, 13002F BA13002 BA13002F si 13001 transistor transistor x 13002 diagram transistor 13001 transistor di 13001 transistor te 13001 13001 HF transistor x 13001 TRANSISTOR si 13001 13001 TRANSISTOR transistor s 13001

    ba13002f

    Abstract: 2U diode
    Text: BA13002F Driver, 6-channel, high current The BA13002F is a high current transistor array consisting of six Darlingtonconfigured transistor circuits. Dimensions Units : mm BA13002F (SOP16) The necessary surge-absorbing diodes and base current-control resistors are


    OCR Scan     		PDF BA13002F BA13002F 2U diode

    transistor x 13001

    Abstract: c s 13001 TRANSISTOR diagram transistor 13001 BA13002 transistor c s x 13001 all transistor 13001 transistor s 13001 c s x 13001 H 06 BA13002F A13001
    Text: BA13001 /B A 13001F/BA13002/BA13002F BA1 3 0 0 1 / B A 1 3 0 0 1 F BAI 3 0 0 2 / B A 1 3 0 0 2 F Interface Driver for Microcontroller Peripherals and Displays • Dimentions Unit : mm The BA13001, BA13001F, BA13002, and BA13002F are large current transistor arrays with 6 Darlington


    OCR Scan     		PDF BA13001 13001F/BA13002/BA13002F BA13001, BA13001F, BA13002, BA13002F 320mA, BA13002) transistor x 13001 c s 13001 TRANSISTOR diagram transistor 13001 BA13002 transistor c s x 13001 all transistor 13001 transistor s 13001 c s x 13001 H 06 A13001

    transistor A62

    Abstract: 9709K darlington buffer array A634 DIP18 S0P16 BA12003 A6257 sink 8 low darlington array BA614
    Text: lumm Transistor array Number Output Max.vdtage Output current mA of CHS (V) BA612 5 BA6256 B A664 6 BA13001F hput/output type Input active Output current Circuit level construction type Package Feature 24 450 25 Invert H Sink Darlington DIP14 24 100 25 Invert


    OCR Scan     		PDF BA612 BA614 BA6256 BA13001F BA13002F BA12001 BA12002 BA12003 BA12004 BA618 transistor A62 9709K darlington buffer array A634 DIP18 S0P16 A6257 sink 8 low darlington array

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS2251T 128K Soft Microcontroller Module FEATURES PACKAGE OUTLINE • 8051 compatible microcontroller adapts to its task o - 32K, 64K, or 128K bytes of nonvolatile SRAM for program and/or data storage - In-system programming via on-chip serial port


    OCR Scan     		PDF DS2251T CRC-16 2251T DS2251T PCND73001) 2bmi30