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    onsemi BAS16LT1G

    DIODE GP 100V 200MA SOT23-3
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    DigiKey BAS16LT1G Digi-Reel 92,044 1
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    BAS16LT1G Cut Tape 92,044 1
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    BAS16LT1G Reel 91,951 3,000
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    BAS16LT1G Reel 81,000 3,000
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    Rochester Electronics BAS16LT1G 158,000 1
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    onsemi SBAS16LT1G

    DIODE GP 100V 200MA SOT23-3
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    DigiKey SBAS16LT1G Reel 12,000 3,000
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    onsemi BAS16LT1

    DIODE SWITCH 200MA 75V SOT23
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    DigiKey BAS16LT1 Reel 3,000
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    onsemi BAS16LT3G

    Small Signal Switching Diodes 75V 200mA
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    Mouser Electronics BAS16LT3G 30,922
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    onsemi SBAS16LT3G

    Small Signal Switching Diodes SS SWCH DIO SPCL TR
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    Mouser Electronics SBAS16LT3G 18,891
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    BAS16LT1 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BAS16LT1 Leshan Radio Company Switching Diode Original PDF
    BAS16LT1 Motorola CASE 31808, STYLE 8 SOT23 (TO236AB) Original PDF
    BAS16LT1 On Semiconductor Switching Diode Original PDF
    BAS16LT1 On Semiconductor Switching Diode Original PDF
    BAS16LT1 Transys Electronics Plastic-Encapsulated Diodes Original PDF
    BAS16LT1-D On Semiconductor Switching Diode Original PDF
    BAS16LT1G On Semiconductor DIODE SWITCHING DIODE 75V 0.2A 3SOT-23 T/R Original PDF

    BAS16LT1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BAS16LT1

    Abstract: No abstract text available
    Text: ON Semiconductort Switching Diode BAS16LT1 ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current 3 1 2 THERMAL CHARACTERISTICS


    Original
    PDF BAS16LT1 r14525 BAS16LT1/D BAS16LT1

    BAS16LT1

    Abstract: No abstract text available
    Text: BAS16LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * TECHNICAL DATA SURFACE MOUNT SWITCHING DIODE Ultra Fast Switching Speed Package:SOT-23 Surface Mount Package Ideally Suited For Automatic Insertion * High Conductance ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original
    PDF BAS16LT1 OT-23 BAS16LT1

    DIODE A6

    Abstract: A6 DIODE SOT 23 a6 diode SOT23 A6 BAS16LT1 SOT-23 a6 sot A6
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS16LT1 SWITCHING DIODE SOT-23 FEATURES Power dissipation 1. 0 mW Tamb=25℃ Forward Current 200 m A IF: Reverse Voltage 75 V VR: Operating and storage junction temperature range


    Original
    PDF OT-23 BAS16LT1 OT-23 150mA DIODE A6 A6 DIODE SOT 23 a6 diode SOT23 A6 BAS16LT1 SOT-23 a6 sot A6

    BAS16LT1

    Abstract: BAS16LT3G diode marking code A6 A6 marking diode SOT 23 marking code a6 diode
    Text: BAS16LT1 Preferred Device Switching Diode Features • Pb−Free Package is Available MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current


    Original
    PDF BAS16LT1 BAS16LT1/D BAS16LT1 BAS16LT3G diode marking code A6 A6 marking diode SOT 23 marking code a6 diode

    Untitled

    Abstract: No abstract text available
    Text: BAS16LT1 SWITCHING DIODE High-speed switching in hybrid thick and thin-film circuits applications Features • • • • Small plastic SMD package High switching speed: max. 6 ns Continuous reverse voltage: max. 75V Repetitive peak forward current: max. 500 mA


    Original
    PDF BAS16LT1 OT-23 150mA

    BAS16LT1

    Abstract: No abstract text available
    Text: ON Semiconductort Switching Diode BAS16LT1 ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current 3 1 2 THERMAL CHARACTERISTICS


    Original
    PDF BAS16LT1 r14525 BAS16LT1/D BAS16LT1

    Untitled

    Abstract: No abstract text available
    Text: BAS16LT1 Preferred Device Switching Diode Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current http://onsemi.com


    Original
    PDF BAS16LT1 BAS16LT1/D

    BAS16LT1G

    Abstract: No abstract text available
    Text: BAS16LT1G, BAS16LT3G, BAS16LT1G, SBAS16LT3G Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    PDF BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G AEC-Q101 BAS16LT1/D BAS16LT1G

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAS16LT1 SWITCHING DIODE SOT—23 FEATURES 1.0 Power dissipation PD : 225 mW(Tamb=25℃) Forward Current IF : 200 mA Reverse Voltage VR : 75 V Operating and storage junction temperature range


    Original
    PDF OT-23 BAS16LT1 037TPY 950TPY 550REF 022REF

    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


    Original
    PDF ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: Switching Diode 3 CATHODE BAS16LT1 1 ANODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current 3 Symbol Value Unit VR IF 75 200 500 Vdc mAdc mAdc I FM surge 1 2 CASE 318–08, STYLE 8 SOT–23 (TO–236AB) DEVICE MARKING


    Original
    PDF BAS16LT1 236AB)

    DIODE A6

    Abstract: A6 DIODE SOT23 A6 SOT 23 a6 diode sot A6 BAS16LT1 diode A6 l
    Text: Transys Electronics L I M I T E D SOT-23 Plastic-Encapsulated Diodes BAS16LT1 SWITCHING DIODE SOT-23 FEATURES Power dissipation 1. 0 mW Tamb=25℃ Forward Current 200 m A IF: Reverse Voltage 75 V VR: Operating and storage junction temperature range 0. 95


    Original
    PDF OT-23 BAS16LT1 OT-23 150mA DIODE A6 A6 DIODE SOT23 A6 SOT 23 a6 diode sot A6 BAS16LT1 diode A6 l

    Untitled

    Abstract: No abstract text available
    Text: BAS16LT1G, BAS16LT3G, BAS16LT1G, SBAS16LT3G Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    PDF BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G BAS16LT1/D

    BAS16LT1

    Abstract: A6 SOT-23
    Text: MOTOROLA Order this document by BAS16LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Diode BAS16LT1 3 CATHODE 1 ANODE Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge


    Original
    PDF BAS16LT1/D BAS16LT1 BAS16LT1/D* BAS16LT1 A6 SOT-23

    SOT 23 marking code a6 diode

    Abstract: BAS16LT1 BAS16LT1G BAS16LT3 BAS16LT3G SOT 23 A6 on diode marking code A6 A6 SOT-23
    Text: BAS16LT1 Preferred Device Switching Diode Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current


    Original
    PDF BAS16LT1 BAS16LT1/D SOT 23 marking code a6 diode BAS16LT1 BAS16LT1G BAS16LT3 BAS16LT3G SOT 23 A6 on diode marking code A6 A6 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Switching Diode BAS16LT1 ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current 3 1 2 THERMAL CHARACTERISTICS


    Original
    PDF BAS16LT1 236AB)

    BAS16LT1

    Abstract: smd code 24
    Text: BAS16LT1 SWITCHING DIODE High-speed switching in hybrid thick and thin-film circuits applications Features • • • • Small plastic SMD package High switching speed: max. 6 ns Continuous reverse voltage: max. 75V Repetitive peak forward current: max. 500 mA


    Original
    PDF BAS16LT1 OT-23 BAS16LT1 smd code 24

    BAS16LT3G

    Abstract: BAS16LT1G SBAS16LT1G
    Text: BAS16LT1G, BAS16LT3G, BAS16LT1G, SBAS16LT3G Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    PDF BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G AEC-Q101 BAS16LT1/D BAS16LT3G BAS16LT1G SBAS16LT1G

    BAS16LT1

    Abstract: No abstract text available
    Text: BAS16LT1 SWITCHING DIODE Features Power dissipation 。 P D : 225 mW Tamb=25 C Pluse Drain I F : 200 mA Reverse Voltage V R : 75V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE 2.EMITTER 3.COLLECTOR


    Original
    PDF BAS16LT1 OT-23 150mA BAS16LT1

    A6 sot23

    Abstract: No abstract text available
    Text: BAS16LT1 Preferred Device Switching Diode Features • Pb−Free Package is Available MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current http://onsemi.com


    Original
    PDF BAS16LT1 A6 sot23

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAS16LT1/D SEMICONDUCTOR TECHNICAL DATA S w itching Diode BAS16LT1 3 0 CATHODE ^ 0 1 ANODE M o to r o la P re fe rre d D e v ic e MAXIMUM RATINGS Rating Symbol Value Unit Vr 75 Vdc if 200 m Adc 'FM fsurge 500 mAdc Symbol Max


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    PDF BAS16LT1/D BAS16LT1

    Untitled

    Abstract: No abstract text available
    Text: M AXIMUM RATINGS Rating Symbol Value VR 75 V dc if 200 m Adc iF M lsu rq e 500 mA C o n tin u o u s R e ve rse V o lta g e P eak F o rw a rd C u rre n t P eak F o rw a rd S u rg e C u rre n t Unit BAS16LT1* CASE 318-07, STYLE 8 SOT-23 TO-236AB) THERMAL CHARACTERISTICS


    OCR Scan
    PDF BAS16LT1* OT-23 O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode BAS16LT1 3 O 14 CATHODE O 1 M otorola Preferred D evice ANODE MAXIMUM RATINGS Rating Sym bol Value V r 75 Vdc iF 2 00 m Adc *FM surge 5 00 m Adc Sym bol Max Unit Pd 225 mW 1.8 m W /°C R 0JA 5 56 °C/W


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    PDF BAS16LT1 perature10%

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAS16LT1/D SEMICONDUCTOR TECHNICAL DATA Sw itching Diode BAS16LT1 3 O \4 CATHODE O 1 Motorola Preferred Device ANODE MAXIMUM RATINGS Rating Symbol Value Unit Vr 75 V dc if 20 0 m A dc iF M s u rg e 50 0 m A dc Symbol Max


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    PDF BAS16LT1/D BAS16LT1 -------------------------------BAS16LT1/D