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    BF1100 Search Results

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    BF1100 Price and Stock

    Abracon Corporation AK7DBF1-100.0000T2

    XTAL OSC XO 100MHZ 2.5V LVDS
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    DigiKey AK7DBF1-100.0000T2 Digi-Reel 528 1
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    AK7DBF1-100.0000T2 Cut Tape 528 1
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    AK7DBF1-100.0000T2 Reel 500 250
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    Mouser Electronics AK7DBF1-100.0000T2 167
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    Rochester Electronics LLC BF1100R,215

    RF MOSFET 9V SOT143R
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    DigiKey BF1100R,215 Bulk 1,567
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    NXP Semiconductors BF1100R,215

    RF MOSFET 9V SOT143R
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    Rochester Electronics BF1100R,215 3,000 1
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    Abracon Corporation AX3PBF1-100.0000

    XTAL OSC XO 100MHZ 2.5V LVPECL
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    Avnet Americas AX3PBF1-100.0000 Bulk 41 Weeks, 3 Days 1
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    AX3PBF1-100.0000 Bulk 8 Weeks 250
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    Mouser Electronics AX3PBF1-100.0000
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    Newark AX3PBF1-100.0000 Bulk 249 1
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    Master Electronics AX3PBF1-100.0000 500
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    Abracon Corporation AX3HBF1-100.0000

    XTAL OSC XO 100MHZ 2.5V HCSL
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    Newark AX3HBF1-100.0000 Bulk 250
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    BF1100 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF1100 NXP Semiconductors BF1100 - Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS Original PDF
    BF1100 Philips Semiconductors Dual-Gate MOS-FET Original PDF
    BF1100 Philips Semiconductors Dual-gate MOS-FETs Scan PDF
    BF1100,215 NXP Semiconductors Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS; Package: SOT143B (SOT4); Container: Tape reel smd Original PDF
    BF1100A Seiko Epson Surface Mount Crystal Oscillators Original PDF
    BF1100R NXP Semiconductors BF1100R - Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS Original PDF
    BF1100R Philips Semiconductors Dual-Gate MOS-FET Original PDF
    BF1100R Philips Semiconductors Dual-gate MOS-FETs Scan PDF
    BF1100R,215 NXP Semiconductors Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS; Package: SOT143R (SC-61B); Container: Tape reel smd Original PDF
    BF1100R,235 NXP Semiconductors Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS; Package: SOT143R (SC-61B); Container: Tape reel smd Original PDF
    BF1100RT/R NXP Semiconductors Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS Original PDF
    BF1100RTR Philips Semiconductors Dual-gate MOS-FET Original PDF
    BF1100T/R NXP Semiconductors Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS Original PDF
    BF1100TR Philips Semiconductors Dual-gate MOS-FET Original PDF
    BF1100WR NXP Semiconductors BF1100WR - Dual-gate MOS-FET - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS Original PDF
    BF1100WR Philips Semiconductors Dual-Gate MOS-FET Original PDF
    BF1100WR Philips Semiconductors Dual-gate MOS-FET Scan PDF
    BF1100WR,115 NXP Semiconductors Dual-gate MOS-FET - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd Original PDF
    BF1100WR,115 NXP Semiconductors BF1100 - TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC, SMD, CMPAK-4, FET RF Small Signal Original PDF
    BF1100WRT/R NXP Semiconductors Dual-gate MOS-FET - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS Original PDF

    BF1100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BF1100; BF1100R Dual-gate MOS-FETs Rev. 02 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


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    BF1100; BF1100R BF1100 PDF

    dual-gate

    Abstract: BF1100 BF1100R marking code my
    Text: BF1100; BF1100R Dual-gate MOS-FETs Rev. 02 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


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    BF1100; BF1100R BF1100 dual-gate BF1100R marking code my PDF

    marking 550 sot143

    Abstract: BF1100 BF1100R dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 25 Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R and substrate interconnected and an internal bias circuit to


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    BF1100; BF1100R marking 550 sot143 BF1100 BF1100R dual-gate PDF

    BF1100WR

    Abstract: marking code mf dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product specification 1995 Apr 25 NXP Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING • Specially designed for use at 9 to 12 V supply voltage  Short channel transistor with high forward transfer


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    BF1100WR R77/01/pp16 BF1100WR marking code mf dual-gate PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BF1100WR Dual-gate MOS-FET Product specification 1995 Apr 25 NXP Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING • Specially designed for use at 9 to 12 V supply voltage  Short channel transistor with high forward transfer


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    BF1100WR R77/01/pp16 PDF

    marking code mf

    Abstract: dual-gate FET MARKING CODE BF1100WR mosfet handbook fw 2602
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 25 Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING • Specially designed for use at 9 to 12 V supply voltage


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    BF1100WR marking code mf dual-gate FET MARKING CODE BF1100WR mosfet handbook fw 2602 PDF

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


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    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


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    digital TUNING FM RADIO RECEIVER

    Abstract: Varicap bb112 OQ8844T varicap bb130 RADIO fm RECEIVER IC UHF TDA1515 FM Receiver Circuits TEA5591A TDA7000 philips ic fm am stereo receiver TDA1013
    Text: INTEGRATED CIRCUITS DATA SHEET Index Functional index 1996 Nov 06 File under Integrated Circuits, IC01 Philips Semiconductors Functional index Index RADIO RECEIVERS AM receivers TDA1072A AM receiver circuit; for car radios TDA1072AT AM receiver circuit; for car radios


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    TDA1072A TDA1072AT TDA1572 TDA1572T TEA5551T TEA6200 TEA5570 TEA5591 TEA5591A TEA5594 digital TUNING FM RADIO RECEIVER Varicap bb112 OQ8844T varicap bb130 RADIO fm RECEIVER IC UHF TDA1515 FM Receiver Circuits TEA5591A TDA7000 philips ic fm am stereo receiver TDA1013 PDF

    smd glass zener diode color codes

    Abstract: KA 511 common anode alphanumeric display 5252 F 1108 ANSI C78.377 2011 F1109 5252 F led D1060 F1060 TLOH16CP H1032
    Text: 2011-3 PRODUCT GUIDE LED Lamps SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g High-Brightness LED Lamps Overview of Toshiba’s Visible LED Lamp Family 1. New Product Digest 1. 2. 3. 4. 5. High-Luminous-Flux White LED Lamps for General Lighting See-Through Type : TL19W01 Series . 4


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    TL19W01 F1108, F1109 BCE0006G smd glass zener diode color codes KA 511 common anode alphanumeric display 5252 F 1108 ANSI C78.377 2011 5252 F led D1060 F1060 TLOH16CP H1032 PDF

    an10133

    Abstract: capacitor 100nf 16v x7r 10 1005 murata TEA5767/68 Garage Door Opener remote circuit diagrams philips rf manual balanced modulator ic 1496 2.4GHz Cordless Phone circuit diagram A case 10uf (10v) ±20% Chip Tantal TEA5767 working principle scanner block diagram
    Text: Philips RF Manual product & design manual for RF small signal discretes 3rd edition July 2003 APPENDIX / documentation/rf_manual Document number: 4322 252 06385 Date of release: July 2003


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    BB202, BF1107/8 BGA6589 BGA6589. BGA6589 an10133 capacitor 100nf 16v x7r 10 1005 murata TEA5767/68 Garage Door Opener remote circuit diagrams philips rf manual balanced modulator ic 1496 2.4GHz Cordless Phone circuit diagram A case 10uf (10v) ±20% Chip Tantal TEA5767 working principle scanner block diagram PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 PDF

    uaf4000

    Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
    Text: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに


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    20GHz uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR PDF

    BF1201A

    Abstract: bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A
    Text: RF Products RF Products 241 RF Access Systems CATV RF Hybrid Amplifiers Type Number Description Frequency Range Gain dB Slope (dB) FL S11/S22 CTB XMOD CSO @Ch @Vo (dBmV) F @fmax Itot (mA) BGS67A 65 MHz, 25.5 dB gain Reverse Amplifier, 12 V 5 - 65 25 - 26


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    S11/S22 BGS67A BGY68 BGY66B BGY67 13MHz 900MHz SA8027 TSSOP20) 44MHz BF1201A bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A PDF

    tcxo philips 4322

    Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
    Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The


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    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一,展示了我们恩智浦半导体 (NXP


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    TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23 PDF

    SG-615PH

    Abstract: SG-615PH C SG615PH smd t2a BF147 SG-615P SG615 100nf Capacitor 0201 BF1600A SMD T2B
    Text: Surface Mount Crystal Oscillators Seiko Epson SG615 Series Features • Frequency range 1.025MHz to 125.00MHz • World’s best selling SMD oscillator stocked in depth • Output Enable/Disable now standard • Excellent specification and price Specifications of low and medium frequency range


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    SG615 025MHz 00MHz BF1228A BF1431A BF1474A DN08000A DO0800A DN1000A DO1000A SG-615PH SG-615PH C SG615PH smd t2a BF147 SG-615P 100nf Capacitor 0201 BF1600A SMD T2B PDF

    RF1119

    Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
    Text: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,


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    PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ620 PRF947 PRF949 PRF957 TFF1000HN TFF1003HN RF1119 TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN PDF

    2SK43 transistor

    Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
    Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written


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    "MARKING CODE MF"

    Abstract: marking ggc BF1100WR marking code mf dual-gate
    Text: Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR PINNING FEATURES • Specially designed for use at 9 to 12 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz


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    BF1100WR OT343R OT343R. 7110fi5b "MARKING CODE MF" marking ggc BF1100WR marking code mf dual-gate PDF

    BF1100

    Abstract: BF1100R 71hwfc dual-gate
    Text: Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R FEATURES • Specially designed for use at 9 to 12 V supply voltage and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.


    OCR Scan
    BF1100; BF1100R OT143 OT143R OT143. OT143R. 71HWfc, BF1100 BF1100R 71hwfc dual-gate PDF

    BF1100R

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Dual-gate MOS-FETs FEATURES • Specially designed for use at 9 to 12 V supply voltage BF1100; BF1100R and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.


    OCR Scan
    BF1100; BF1100R OT143R. BF1100R PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR PINNING FEATURES • Specially designed for use at 9 to 12 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz


    OCR Scan
    BF1100WR OT343R OT343R. PDF

    sot23 marking M6p

    Abstract: PMBFJ111 PMBFJ174
    Text: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER


    OCR Scan
    OT143 OT343 BF510 BF994S BST120 BF511 BF996S BST122 BF512 BF997 sot23 marking M6p PMBFJ111 PMBFJ174 PDF