BF1102 |
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NXP Semiconductors
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BF1102 - TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC, SC-88, 6 PIN, FET RF Small Signal |
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BF1102 |
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Philips Semiconductors
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Dual N-Channel Dual Gate MOS-FET |
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BF1102 |
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Philips Semiconductors
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Dual N-channel dual gate MOS-FET |
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Original |
PDF
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BF1102,115 |
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NXP Semiconductors
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Dual N-channel dual gate MOS-FETs - CIS TYP: 2.8 pF; COS: 1.6 pF; ID: 40 mA; IDSS: 12 to 20 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT363 (SC-88); Container: Tape reel smd |
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BF1102,115 |
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NXP Semiconductors
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BF1102 - Dual N-channel dual gate MOS-FETs, SOT363 Package, Standard Marking, Reel Pack, SMD, 7" |
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BF1102R |
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NXP Semiconductors
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BF1102R - Dual N-channel dual gate MOS-FETs - CIS TYP: 2.8 pF; COS: 1.6 pF; ID: 40 mA; IDSS: 12 to 20 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS |
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Original |
PDF
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BF1102R |
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Philips Semiconductors
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Dual N-Channel Dual Gate MOS-FET |
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Original |
PDF
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BF1102R |
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Philips Semiconductors
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Dual N-channel dual gate MOS-FET |
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Scan |
PDF
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BF1102R,115 |
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NXP Semiconductors
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Dual N-channel dual gate MOS-FETs - CIS TYP: 2.8 pF; COS: 1.6 pF; ID: 40 mA; IDSS: 12 to 20 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT363 (SC-88); Container: Tape reel smd |
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Original |
PDF
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BF1102R,115 |
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NXP Semiconductors
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BF1102 - TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC, SMD, UMT6, SC-88, 6 PIN, FET RF Small Signal |
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Original |
PDF
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BF1102R,135 |
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NXP Semiconductors
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Dual N-channel dual gate MOS-FETs - CIS TYP: 2.8 pF; COS: 1.6 pF; ID: 40 mA; IDSS: 12 to 20 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT363 (SC-88); Container: Tape reel smd |
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Original |
PDF
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BF1102R,135 |
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NXP Semiconductors
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BF1102R - Dual N-channel dual gate MOS-FETs, SOT363 Package, Standard Marking, Reel Pack, SMD, Large |
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Original |
PDF
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BF1102RT/R |
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NXP Semiconductors
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Dual N-channel dual gate MOS-FETs - CIS TYP: 2.8 pF; COS: 1.6 pF; ID: 40 mA; IDSS: 12 to 20 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS |
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Original |
PDF
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