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    BF964S Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF964S Philips Semiconductors Silicon N-Channel Dual Gate MOS FET Original PDF
    BF964S Siemens Cross Reference Guide 1998 Original PDF
    BF964S Temic Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
    BF964S Vishay Intertechnology N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
    BF964S Vishay Telefunken TRANS MOSFET N-CH 20V 0.03A 4TO-50 Original PDF
    BF964S Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
    BF964S Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BF964S Unknown Cross Reference Datasheet Scan PDF
    BF964S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF964S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF964S Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BF964S Philips Semiconductors Silicon N-Channel Dual Gate MOS FET Scan PDF
    BF964S Philips Semiconductors SILICON N-CHANNEL DUAL GATE MOS-FET Scan PDF
    BF964SA Vishay Telefunken TRANS MOSFET N-CH 20V 0.03A 4TO-50 Original PDF
    BF964SB Vishay Intertechnology N-Channel 20-V (D-S), 175-C MOSFET Original PDF
    BF964SB Vishay Telefunken TRANS MOSFET N-CH 20V 0.03A 4TO-50 Original PDF

    BF964S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BF964S

    Abstract: BF964 BF964SA BF964SB
    Text: BF964S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF TV-tuners. Features D Integrated gate protection diodes


    Original
    BF964S BF964S D-74025 20-Jan-99 BF964 BF964SA BF964SB PDF

    BF964S

    Abstract: BF964SA BF964SB J02-1
    Text: BF964S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF TV-tuners. Features D Integrated gate protection diodes


    Original
    BF964S BF964S D-74025 20-Jan-99 BF964SA BF964SB J02-1 PDF

    BF964S

    Abstract: BF964SA BF964SB
    Text: BF964S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF TV-tuners. Features D Integrated gate protection diodes


    Original
    BF964S BF964S D-74025 20-Jan-99 BF964SA BF964SB PDF

    BF964

    Abstract: BF964SA BF964S BF964SB TO50 package
    Text: BF964S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance


    Original
    BF964S BF964SA BF964SB BF964SA BF96s D-74025 BF964 BF964S BF964SB TO50 package PDF

    TO50 package

    Abstract: BF964S
    Text: BF964S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance


    Original
    BF964S 2002/95/EC 2002/96/EC BF964S BF964SA BF964SB 08-Apr-05 TO50 package PDF

    BF964SA

    Abstract: BF964S BF964SB TO50 package BF964
    Text: BF964S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance


    Original
    BF964S 2002/95/EC 2002/96/EC D-74025 15-Apr-05 BF964SA BF964S BF964SB TO50 package BF964 PDF

    BF964S

    Abstract: BF964SA BF964SB bf96
    Text: BF964S Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF TV-tuners. Features D Integrated gate protection diodes


    Original
    BF964S BF964S D-74025 20-Jan-99 BF964SA BF964SB bf96 PDF

    BF964S

    Abstract: BF964SA BF964SB
    Text: BF964S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for VHF TV-tuners. Features D High AGC-range D Low feedback capacitance D Low input capacitance


    Original
    BF964S BF964S D-74025 16-Jan-97 BF964SA BF964SB PDF

    Untitled

    Abstract: No abstract text available
    Text: BF964S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance


    Original
    BF964S BF961 D-74025 20-Aug-04 PDF

    Untitled

    Abstract: No abstract text available
    Text: BF964S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance


    Original
    BF964S BF961 D-74025 02-Sep-04 PDF

    S1290

    Abstract: No abstract text available
    Text: BF964S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance


    Original
    BF964S BF961 D-74025 03-Sep-04 S1290 PDF

    BF964S

    Abstract: No abstract text available
    Text: BF964S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance


    Original
    BF964S BF961 D-74025 20-Aug-04 BF964S PDF

    BF964

    Abstract: BF964S BF964SA BF964SB
    Text: BF964S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for VHF TV-tuners. Features D Integrated gate protection diodes D High cross modulation performance


    Original
    BF964S BF964S D-74025 16-Jan-97 BF964 BF964SA BF964SB PDF

    BF963

    Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
    Text: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99


    Original
    OD-123 1N4001 1N4002 1N4003 1N4004 1N4148 BF963 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd PDF

    S S 850-03

    Abstract: No abstract text available
    Text: BF964S v m rn r ▼ Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions fo r handling. A Applications Input- and m ixer stages especially V H F TV-tuners. Features • Integrated gate protection diodes


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    BF964S BF964S 20-Jan-99 S S 850-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: BF964S _ J \_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r V H F applications in television tuners. The device is also suitable for use in professional


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    BF964S 003ST30 PDF

    dual-gate

    Abstract: No abstract text available
    Text: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF964S APPLICATIONS • VHF applications in television tuners. The device is also suitable for use in professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic X-package


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    BF964S SQT103) erT103) dual-gate PDF

    BF964S

    Abstract: BF964SA
    Text: Temic BF964S S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions for handling. ^ Applications Input- and m ixerstages especially for V H F TV-tuners. Features • Integrated gate protection diodes


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    BF964S F964S BF964S 16-Jan-97 BF964SA PDF

    CFY19

    Abstract: CFY19-18 CFY19-22 BF995 BF963 CFY10 BF961 BF964S BF965 CFY65-14
    Text: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors " BF961 BF963 BF964S BF965 BF966S BF988 BF987 Triode V DS V ^DS niA Pt mW 20 20 20 20 20 12 20 30 50 30 30 30 30 30 200 200 200


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    E35bOS DD45427 BF961 BF995 BF963 BF993 BF964S BF994S BF965 BF997 CFY19 CFY19-18 CFY19-22 BF995 CFY10 CFY65-14 PDF

    transistor mosfet bf964s

    Abstract: BF964SA BF964S 10103F
    Text: BF964S J V_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r V H F applications in television tuners. The device is also suitable fo r use in professional


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    BF964S transistor mosfet bf964s BF964SA BF964S 10103F PDF

    s525

    Abstract: s918 BF988 bfr96ts S858TA3 BF-970 BFP183T
    Text: Tem ic Semiconductors General Information Alphanumeric Index Type. T ype . Type. Type . BFR90A 9, 243 S593T 8, 105 BFR91 9, 250 S594T 8, 112 9, 163 BFR91A . . . . 9, 256 S595T 8, 119 BFP81 9, 173 BFR92 S822T 9, 338 8. 52


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    BF569 BF579 BF961 BF964S BF966S BF970 BF979 BF988 BF994S BF995 s525 s918 bfr96ts S858TA3 BF-970 BFP183T PDF

    CFY19-22

    Abstract: CFY19 Dual-Gate* bf981 bf987
    Text: "sIEMENS AKTIENGESELLSCHAF bOE I> • SEBSbDS DDS1M7M S34 «SIEfi 'T'dó'M SIEMENS Transistoren Transistors MOS Feldeffekt-Transistoren Type MOS Field-Effect Transistors Maximum Ratings Characteristics TA= 25° C ^ds V ¡d mA P,o. G ps mW dB ' * I' c' ' '


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    BF930 BF994S BF996S BF998 BF1012 CF739 CF750 OT-143 CFY19-18 CFY19-22 CFY19 Dual-Gate* bf981 bf987 PDF

    pj 929 diode picture

    Abstract: bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor
    Text: Philips Sem iconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits


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    BA481 SAA7197 SAA7199B TDA4680 TDA4685 pA733C LFC02 MEH469 pj 929 diode picture bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor PDF

    1990- 2335 optocoupler

    Abstract: philips 3139 147 tv tuner TDA6101Q equivalent TDA3827 tda6100 ofw g 3201 ica v94 display OFW G 3352 BB515 pj 2309 smd diode
    Text: Philips S em iconductors S em ico n d u cto rs fo r Television and V id eo S ystem s Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors


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    BA481 SAA7197 SAA7199B TDA4680 TDA4685 pA733C LCD01 1990- 2335 optocoupler philips 3139 147 tv tuner TDA6101Q equivalent TDA3827 tda6100 ofw g 3201 ica v94 display OFW G 3352 BB515 pj 2309 smd diode PDF