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    BFP420F Price and Stock

    Infineon Technologies AG BFP-420F-E6327

    RF TRANS NPN 5V 25GHZ 4TSFP
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    DigiKey BFP-420F-E6327 Reel 3,000
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    Infineon Technologies AG BFP420FH6327XTSA1

    RF TRANS NPN 5.5V 25GHZ 4TSFP
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    DigiKey BFP420FH6327XTSA1 Cut Tape 1
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    BFP420FH6327XTSA1 Digi-Reel 1
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    BFP420FH6327XTSA1 Reel 3,000
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    Mouser Electronics BFP420FH6327XTSA1 255
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    Verical BFP420FH6327XTSA1 180,000 3,000
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    BFP420FH6327XTSA1 3,175 230
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    BFP420FH6327XTSA1 252 46
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    Arrow Electronics BFP420FH6327XTSA1 Cut Strips 252 10 Weeks 1
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    Newark BFP420FH6327XTSA1 Cut Tape 11,011 5
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    BFP420FH6327XTSA1 Reel 3,000
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    Rochester Electronics BFP420FH6327XTSA1 135 1
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    TME BFP420FH6327XTSA1 1
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    Chip1Stop BFP420FH6327XTSA1 Cut Tape 3,175
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    EBV Elektronik BFP420FH6327XTSA1 138,000 11 Weeks 3,000
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    New Advantage Corporation BFP420FH6327XTSA1 96,000 1
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    Infineon Technologies AG BFP 420F H6327

    RF Bipolar Transistors RF BIP TRANSISTOR
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    Mouser Electronics BFP 420F H6327 593
    • 1 $0.45
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    Infineon Technologies AG BFP 420F E6327

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    Bristol Electronics BFP 420F E6327 686
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    Infineon Technologies AG BFP420F-E6327

    TRANSISTOR
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    Quest Components BFP420F-E6327 2,292
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    BFP420F-E6327 2,292
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    BFP420F-E6327 2,144
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    BFP420F-E6327 2,144
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    BFP420F-E6327 548
    • 1 $0.95
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    BFP420F-E6327 548
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    Find more BFP420F price and stock on Findchips.com

    BFP420F Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFP420F Infineon Technologies NPN Silicon RF transistor for low noise, high gain amplifiers in NEW thin small flatlead package TSFP-4 Original PDF
    BFP420F Infineon Technologies Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-TSFP-4; VCEO (max): 4.5 V; IC(max): 35.0 mA; Ptot (max): 160.0 mW; fT (typ): 25.0 GHz; F (typ): 1.1 dB; Original PDF
    BFP 420F E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 4.5V TSFP-4 Original PDF
    BFP420FE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 4.5V TSFP-4 Original PDF
    BFP420FE6327 Infineon Technologies TRANS GP BJT NPN 4.5V 0.035 Original PDF
    BFP420FH6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 5.5V 35MA 4TSFP Original PDF
    BFP420FH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 5.5V 35MA 4TSFP Original PDF

    BFP420F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.0, 2012-01-30 RF & Protection Devices Edition 2012-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP420F BFP420F:

    TRANSISTOR MARKING YB

    Abstract: BFP420F MARKING 1G TRANSISTOR
    Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ms = 20 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP420F 100MHz. EHA07307 May-29-2001 TRANSISTOR MARKING YB BFP420F MARKING 1G TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP420F

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP420F

    marking ams

    Abstract: TRANSISTOR MARKING YB BFP420F EHA07307 transistor bI 240 nh TRANSISTOR DEC07
    Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP420F 100MHz. EHA07307 Dec-07-2001 marking ams TRANSISTOR MARKING YB BFP420F EHA07307 transistor bI 240 nh TRANSISTOR DEC07

    Untitled

    Abstract: No abstract text available
    Text: BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.1, 2012-11-07 RF & Protection Devices Edition 2012-11-07 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP420F BFP420F:

    BFP420F

    Abstract: No abstract text available
    Text: BFP420F NPN Silicon RF Transistor* • For high gain low noise amplifiers 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original     		PDF BFP420F BFP420F

    7661 infineon

    Abstract: BFP420F
    Text: BFP420F NPN Silicon RF Transistor* • For high gain low noise amplifiers 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original     		PDF BFP420F 7661 infineon BFP420F

    Untitled

    Abstract: No abstract text available
    Text: BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.0, 2012-01-30 RF & Protection Devices Edition 2012-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP420F BFP420F:

    germanium transistor ac 128

    Abstract: BFP420F BFP740F
    Text: BFP740F NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor 3 • Provides outstanding performance for 2 4 1 a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		PDF BFP740F germanium transistor ac 128 BFP420F BFP740F

    marking AUs

    Abstract: BFP420F BFP540FESD amplifier marking code a
    Text: BFP540FESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 1 typical value 1000 V HBM • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • SIEGET  45 - Line • Pb-free (ROHS compliant) package 1)


    Original     		PDF BFP540FESD marking AUs BFP420F BFP540FESD amplifier marking code a

    RF NPN POWER TRANSISTOR C 10-12 GHZ

    Abstract: BFP740 BFP420F BFP740F LBC* MARKING 160 germanium transistor
    Text: BFP740F NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor 3 • Provides outstanding performance for 2 4 1 a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		PDF BFP740F RF NPN POWER TRANSISTOR C 10-12 GHZ BFP740 BFP420F BFP740F LBC* MARKING 160 germanium transistor

    BFP520F

    Abstract: BFP420F TSFP-4 transistor BF 235
    Text: BFP520F NPN Silicon RF Transistor* • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 1 Outstanding Gms = 23 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability


    Original     		PDF BFP520F BFP520F BFP420F TSFP-4 transistor BF 235

    Untitled

    Abstract: No abstract text available
    Text: BFP620F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 1 • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz


    Original     		PDF BFP620F

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    BFP620F

    Abstract: TSFP-4 BFR34* transistor BC848BF BA892-07F BAT62-07F BAS40-04F Infineon Technologies transistor 4 ghz BAR63-07F BAV70F
    Text: P B R O D U C T R I E F A new Milestone in Miniaturization of SMD Standard Packages for Discrete Components TSFP stands for Thin Small Flat Package. With a reduced height of max. 0.59 mm vs. 0.8 mm for a SC-75 package and an outline of only 1.2 x 1.2 mm2 for TSFP-3 (vs. 1.6 × 1.6 mm2 for


    Original     		PDF SC-75 SC-75) B114-H7900-X-X-7600 BFP620F TSFP-4 BFR34* transistor BC848BF BA892-07F BAT62-07F BAS40-04F Infineon Technologies transistor 4 ghz BAR63-07F BAV70F

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    Untitled

    Abstract: No abstract text available
    Text: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original     		PDF BFP405F

    Untitled

    Abstract: No abstract text available
    Text: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640F BFP640may

    BFP405F

    Abstract: BFP420F TSFP-4
    Text: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original     		PDF BFP405F BFP405F BFP420F TSFP-4

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    mje 180 equivalent

    Abstract: No abstract text available
    Text: BFP620F_E6327 NPN Silicon Germanium RF Transistor XYs Preliminary data • For high gain low noise amplifiers • Smallest Package 1.4 x 0.8 x 0.59mm 3 • Noise figure F = 0.65 dB at 1.8 GHz 2 4 outstanding Gms = 21 dB at 1.8 GHz 1 • Gold metallization for extra high reliability


    Original     		PDF BFP620F E6327 mje 180 equivalent

    Untitled

    Abstract: No abstract text available
    Text: BFP740F XYs NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor 3 • Provides outstanding performance for a wide range 2 4 of wireless applications up to 10 GHz 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		PDF BFP740F

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 45 BFP520F NPN Silicon RF Transistor Preliminary data XYs  For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V 3 Outstanding Gms = 23 dB 2 4 Noise Figure F = 0.95 dB 1  For oscillators up to 15 GHz  Transition frequency fT = 45 GHz TSFP-4


    Original     		PDF BFP520F