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    Infineon Technologies AG BFR360FH6327XTSA1

    RF TRANS NPN 9V 14GHZ TSFP-3
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    Infineon Technologies AG BFR360FH6765XTSA1

    RF TRANS NPN 9V 14GHZ TSFP-3
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    BFR360FH6765XTSA1 Digi-Reel 7,714 1
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    BFR360FH6765XTSA1 Reel 3,000 3,000
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    Verical BFR360FH6765XTSA1 150,000 6,000
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    BFR360FH6765XTSA1 9,000 4,755
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    BFR360FH6765XTSA1 3,540 1
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    Infineon Technologies AG BFR-360F-E6765

    RF TRANS NPN 9V 14GHZ TSFP-3
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    Infineon Technologies AG BFR-360F-E6327

    RF TRANS NPN 9V 14GHZ TSFP-3
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    Infineon Technologies AG BFR360FH6327XTSA1/S

    BFR360FH6327XTSA1/SAMPLE - Tape and Reel (Alt: BFR360FH6327XTSA1/)
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    BFR360F Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFR360F Infineon Technologies BFR360F preliminary Original PDF
    BFR360F Infineon Technologies Si RF Transistors, fT < 24 GHz; Package: PG-TSFP-3; VCEO (max): 6.0 V; IC(max): 35.0 mA; Ptot (max): 210.0 mW; fT (typ): 14.0 GHz; F (typ): 1.0 dB; Original PDF
    BFR360F Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR360FE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 6V TSFP-3 Original PDF
    BFR360FE6327 Infineon Technologies TRANS GP BJT NPN 6V 0.035A Original PDF
    BFR 360F E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 6V TSFP-3 Original PDF
    BFR360FE6765 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 6V TSFP-3 Original PDF
    BFR360FE6765 Infineon Technologies TRANS GP BJT NPN 6V 0.035A Original PDF
    BFR 360F E6765 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 6V TSFP-3 Original PDF
    BFR360FH6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 6V 35MA TSFP-3 Original PDF
    BFR360FH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 6V 35MA TSFP-3 Original PDF
    BFR360FH6765 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 6V 35MA TSFP-3 Original PDF
    BFR360FH6765XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 6V 35MA TSFP-3 Original PDF
    BFR360FL6765 Infineon Technologies TRANS GP BJT NPN 6V 0.035A Original PDF

    BFR360F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    clapp oscillator

    Abstract: bjt oscillator application note BJT phase shift oscillator AN061 AN-061 BBY58 BBY58-02V BFR360F bjt oscillator Varactor Diode RF
    Text: Application Note No. 061 Silicon Discretes W-CDMA 2.3 GHz VCO using BFR360F and BBY58-02V Features • Low phase noise of < -90 dBc / Hz at 10 kHz using a low Q resonator. • 0 dBm output power at low current consumption. 2 3 1 • Highly linear oscillation frequency


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    PDF BFR360F BBY58-02V BFR360F AN061 clapp oscillator bjt oscillator application note BJT phase shift oscillator AN061 AN-061 BBY58 BBY58-02V bjt oscillator Varactor Diode RF

    BFR360F

    Abstract: AN077
    Text: BFR360F NPN Silicon RF Transistor • Low noise amplifier for low current applications • Collector design supports 5V supply voltage 2 3 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package • Qualified according AEC Q101


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    PDF BFR360F BFR360F AN077

    IC 7437

    Abstract: BFR360F
    Text: BFR360F NPN Silicon RFTransistor Preliminary data Low voltage/ low current operation For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm  Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360F te20mA Jun-22-2001 -j100 IC 7437 BFR360F

    Untitled

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation 2 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360F Apr-14-2003 -j100

    Untitled

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RF Transistor* • Low voltage/ low current operation 2 3 • For low noise amplifiers 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360F

    Untitled

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation 2 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360F Jan-29-2002 -j100

    s parameters 4ghz

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RFTransistor Preliminary data Low voltage/ low current operation For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm  Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360F Oct-26-2001 -j100 s parameters 4ghz

    transitor RF 98

    Abstract: BFR360F E6327 GMA marking
    Text: BFR360F NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation 2 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360F transitor RF 98 BFR360F E6327 GMA marking

    Untitled

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RFTransistor Preliminary data Low voltage/ low current operation For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm  Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360F Aug-22-2001 -j100

    BFR360F

    Abstract: 104GHz transitor RF 98
    Text: BFR360F NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation 2 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360F Jun-16-2003 -j100 BFR360F 104GHz transitor RF 98

    Untitled

    Abstract: No abstract text available
    Text: BFR360F Low Noise Silicon Bipolar RF Transistor • Low noise amplifier for low current applications • Collector design supports 5 V supply voltage 2 3 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant and halogen-free thin small


    Original
    PDF BFR360F AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RF Transistor • Low noise amplifier for low current applications 2 3 • Collector design supports 5V supply voltage 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package • Qualified according AEC Q101


    Original
    PDF BFR360F

    RF NPN POWER TRANSISTOR C 10-12 GHZ

    Abstract: BFR360F TRANSISTOR MARKING NK
    Text: BFR360F NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original
    PDF BFR360F RF NPN POWER TRANSISTOR C 10-12 GHZ BFR360F TRANSISTOR MARKING NK

    Untitled

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation 2 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360F 21cal

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    Untitled

    Abstract: No abstract text available
    Text: Product Brief BGA619 High IP3 SiGe LNA Designed fo r 1 .9 G H z A pp l i ca t i o ns T h e B G A 6 1 9 i s a S i l i c o n - G e r m a n i u m SiGe low noise amplifier (LNA) designed for PCS CDMA2000 applications from 1.93 to 1.99GHz. Based on Infineon's B7HF technology the IC


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    PDF BGA619 CDMA2000 99GHz. BGA619. B132-H8413-X-X7600

    clapp oscillator

    Abstract: history of varactor diode BFR36 BFR360 BBY58-02V BFR360F N061 SC79 transistor oscillator circuit BJT phase shift oscillator
    Text: A pp li c at i on N ot e , R ev . 2. 0 , N ov . 2 00 6 A p p li c a t i o n N o t e N o . 0 6 1 W - C D M A 2 . 3 G H z V C O u s i n g B F R 3 60 F an d B B Y 58 - 0 2 V S m a l l S i g n a l D i s c r et e s Edition 2006-11-07 Published by Infineon Technologies AG


    Original
    PDF THE90 BFR360F clapp oscillator history of varactor diode BFR36 BFR360 BBY58-02V N061 SC79 transistor oscillator circuit BJT phase shift oscillator

    FSEM30

    Abstract: BFR360F TSFP-3 transistor A 928 d 882 transistor Transistor Cross Reference transistor cross reference chart
    Text: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 5 0 A 900 MHz Low Noise Amplifier Using the B F R 3 6 0 F T r a n s i s t o r i n T S F P - 3 P ac k a g e R F & P r o t e c ti o n D e v i c e s Edition 2008-02-22


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    PDF BFR360F FSEM30 TSFP-3 transistor A 928 d 882 transistor Transistor Cross Reference transistor cross reference chart

    clapp oscillator

    Abstract: history of varactor diode BFR360 BBY58-02V BFR360F N061 SC79 varactor diode q factor measurement
    Text: A pp li c at i on N ot e , R ev . 2. 0 , N ov . 2 00 6 A p p li c a t i o n N o t e N o . 0 6 1 W - C D M A 2 . 3 G H z V C O u s i n g B F R 3 60 F an d B B Y 58 - 0 2 V R F & P r o t e c ti o n D e v i c e s Edition 2006-11-07 Published by Infineon Technologies AG


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    PDF THE90 BFR360F clapp oscillator history of varactor diode BFR360 BBY58-02V N061 SC79 varactor diode q factor measurement

    BFP540

    Abstract: BFR380F Transistor BFP540 BFP620 applications note AN057 AN060 AN075 BFP620 BFR340F BFR360F
    Text: A pp l ic a t io n N o t e, R e v . 2. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 7 5 H i g h T h i r d- O r d e r I n p u t I n te r c e p t P o i n t C D M A 8 0 0 Low Noise Amplifier R F & P r o t e c ti o n D e v i c e s Edition 2007-01-08


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    PDF

    BFP620F

    Abstract: TSFP-4 BFR34* transistor BC848BF BA892-07F BAT62-07F BAS40-04F Infineon Technologies transistor 4 ghz BAR63-07F BAV70F
    Text: P B R O D U C T R I E F A new Milestone in Miniaturization of SMD Standard Packages for Discrete Components TSFP stands for Thin Small Flat Package. With a reduced height of max. 0.59 mm vs. 0.8 mm for a SC-75 package and an outline of only 1.2 x 1.2 mm2 for TSFP-3 (vs. 1.6 × 1.6 mm2 for


    Original
    PDF SC-75 SC-75) B114-H7900-X-X-7600 BFP620F TSFP-4 BFR34* transistor BC848BF BA892-07F BAT62-07F BAS40-04F Infineon Technologies transistor 4 ghz BAR63-07F BAV70F

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original
    PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    cdma Booster schematic

    Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
    Text: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….


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    PDF B132-H9014-X-X-7600 NB07-1094 cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz