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    BFR520 Price and Stock

    NXP Semiconductors BFR520,215

    RF TRANS NPN 15V 9GHZ TO236AB
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    NXP Semiconductors BFR520,235

    RF TRANS NPN 15V 9GHZ TO236AB
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    NXP Semiconductors BFR520T,115

    RF TRANS NPN 15V 9GHZ SC75
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    EBV Elektronik BFR520T,115 54 Weeks 3,000
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    Vyrian BFR520T,115 459
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    Philips Semiconductors BFR520

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    Bristol Electronics BFR520 1,500
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    BFR520 940
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    Quest Components BFR520 1,200
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    BFR520 752
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    Philips E C G Inc BFR520T

    Electronic Component
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    ComSIT USA BFR520T 1,169
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    BFR520 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFR520 NXP Semiconductors BFR520 - NPN 9 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ IC: 20 mA; fT: 9 GHz; Frequency: 1.9 MHz; GUM @ f1: 15 dB; GUM @ f2: 9 dB; Gain @ 1.9 GHz: 10 dB; Gain @ 900 Mhz: 17 dB; IC: 70 mA; ITO: 26 dBm; Noise figure: Original PDF
    BFR520 Philips Semiconductors NPN 9 GHz Wideband Transistor Original PDF
    BFR520 Philips Semiconductors NPN 5 GHz wideband transistors Original PDF
    BFR520 Philips Semiconductors NPN 9 GHz Wideband Transistor Original PDF
    BFR520 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFR520,215 NXP Semiconductors BFR520 - TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SST, 3 PIN, BIP RF Small Signal Original PDF
    BFR520,215 NXP Semiconductors NPN 9 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ IC: 20 mA; fT: 9 GHz; Frequency: 1.9 MHz; GUM @ f1: 15 dB; GUM @ f2: 9 dB; Gain @ 1.9 GHz: 10 dB; Gain @ 900 Mhz: 17 dB; IC: 70 mA; ITO: 26 dBm; Noise figure:; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BFR520,235 NXP Semiconductors BFR520 - NPN 9 GHz wideband transistor, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, Large Original PDF
    BFR520,235 NXP Semiconductors NPN 9 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ IC: 20 mA; fT: 9 GHz; Frequency: 1.9 MHz; GUM @ f1: 15 dB; GUM @ f2: 9 dB; Gain @ 1.9 GHz: 10 dB; Gain @ 900 Mhz: 17 dB; IC: 70 mA; ITO: 26 dBm; Noise figure:; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BFR520/C,215 NXP Semiconductors BFR520/C - NPN 9 GHz wideband transistor, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel Original PDF
    BFR520T NXP Semiconductors BFR520T - NPN 9 GHz wideband transistor - @ f1: 900 ; @ f2: 2000 ; @ IC: 70 mA; fT: 9 GHz; GUM @ f1: 15 dB; GUM @ f2: 9 dB; IC: 70 mA; ITO: 26 dBm; Noise figure: [email protected]@f1 dB; PL: 17 W; Ptot: 150 mW; Polarity: NPN Original PDF
    BFR520T Philips Semiconductors NPN 9 GHz wideband transistor Original PDF
    BFR520T Philips Semiconductors NPN 9 GHz Wideband Transistor Original PDF
    BFR520T,115 NXP Semiconductors BFR520 - TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN, BIP RF Small Signal Original PDF
    BFR520T,115 NXP Semiconductors NPN 9 GHz wideband transistor - @ f1: 900 ; @ f2: 2000 ; @ IC: 70 mA; fT: 9 GHz; GUM @ f1: 15 dB; GUM @ f2: 9 dB; IC: 70 mA; ITO: 26 dBm; Noise figure: [email protected]@f1 dB; PL: 17 W; Ptot: 150 mW; Polarity: NPN; Package: SOT416 (SC-75); Container: Tape reel smd Original PDF
    BFR520T/R NXP Semiconductors NPN 9 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ IC: 20 mA; fT: 9 GHz; Frequency: 1.9 MHz; GUM @ f1: 15 dB; GUM @ f2: 9 dB; Gain @ 1.9 GHz: 10 dB; Gain @ 900 Mhz: 17 dB; IC: 70 mA; ITO: 26 dBm; Noise figure: Original PDF
    BFR520T/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BFR520TR Philips Semiconductors NPN 9 GHz wideband transistor Scan PDF
    BFR520TT NXP Semiconductors TRANS GP BJT NPN 15V 0.07A 3 Original PDF
    BFR520TT/R NXP Semiconductors TRANS GP BJT NPN 15V 0.07A 3 Original PDF

    BFR520 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RF TRANSISTOR 1.5 GHZ

    Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 3 GHZ zo 103 ma Types of Radar 1.2 ghz tuner radar circuit component transistor equivalent table MRA705 RF TRANSISTOR 2.5 GHZ s parameter
    Text: BFR520 NPN 9 GHz wideband transistor Rev. 03 — 1 September 2004 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ High power gain


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    BFR520 BFR520 RF TRANSISTOR 1.5 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 3 GHZ zo 103 ma Types of Radar 1.2 ghz tuner radar circuit component transistor equivalent table MRA705 RF TRANSISTOR 2.5 GHZ s parameter PDF

    Transistor A111

    Abstract: No abstract text available
    Text: ^zmi-L.onau.cto'i , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN RF Transistor BFR520 DESCRIPTION • High Power Gain ^^ • High Current Gain Bandwidth Product SOT- 2 3 package


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    BFR520 900MHz 150T150 Transistor A111 PDF

    bfr520

    Abstract: No abstract text available
    Text: SO T2 3 BFR520 NPN 9 GHz wideband transistor Rev. 4 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits   


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    BFR520 BFR520 PDF

    MRC026

    Abstract: MRC025 BFR520T SC-75 mrc021 MRC027
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR520T NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Apr 03 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T FEATURES DESCRIPTION • High power gain


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    M3D173 BFR520T OT416 SC-75) MBK090 R77/02/pp13 MRC026 MRC025 BFR520T SC-75 mrc021 MRC027 PDF

    Untitled

    Abstract: No abstract text available
    Text: X3A-BFR520 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)20 I(C) Max. (A)70m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)6


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    X3A-BFR520 PDF

    15 w RF POWER TRANSISTOR NPN

    Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ high gain low capacitance NPN transistor BFR520 transistor RF TRANSISTOR RF NPN POWER TRANSISTOR 3 GHZ RF frontend RF POWER TRANSISTOR NPN RF TRANSISTOR 1.5 GHZ BFR520
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFR520 DESCRIPTION •High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones,


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    BFR520 900MHz S21e2 15 w RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 2.5 GHZ high gain low capacitance NPN transistor BFR520 transistor RF TRANSISTOR RF NPN POWER TRANSISTOR 3 GHZ RF frontend RF POWER TRANSISTOR NPN RF TRANSISTOR 1.5 GHZ BFR520 PDF

    BFR520

    Abstract: 900MHZ
    Text: BFR520 NPN 9 GHz RF Wideband Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 SOT-23 FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. The transistor is encapsulated in a plastic SOT23 envelope.


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    BFR520 OT-23 BFR520 06-Feb-07 OT-23 900MHZ PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 BFR520 NPN 9 GHz wideband transistor Rev. 4 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits   


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    BFR520 BFR520 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR520 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)20 I(C) Max. (A)70m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)6


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    BFR520 PDF

    MRC026

    Abstract: MRC027
    Text: DISCRETE SEMICONDUCTORS DAT M3D173 BFR520T NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Apr 03 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T FEATURES DESCRIPTION • High power gain


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    M3D173 BFR520T OT416 SC-75) MBK090 R77/02/pp13 MRC026 MRC027 PDF

    MRC027

    Abstract: MRC021 MRC025 BFR520T SC75 MRC028 MAM337
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR520T NPN 9 GHz wideband transistor Preliminary specification 1999 Oct 18 Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor BFR520T PINNING FEATURES • High power gain PIN DESCRIPTION


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    M3D173 BFR520T OT416 budgetnum/ed/pp12 MRC027 MRC021 MRC025 BFR520T SC75 MRC028 MAM337 PDF

    BFR520

    Abstract: MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR520 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 telephones CT1, CT2, DECT, etc. ,


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    BFR520 BFR520 MSB003 PDF

    MRC026

    Abstract: MRC027 BFR520T SC-75 TRANSISTOR n 522 MRC025 MRC028
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR520T NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Apr 03 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T FEATURES DESCRIPTION • High power gain


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    M3D173 BFR520T OT416 SC-75) MBK090 603508/02/pp12 MRC026 MRC027 BFR520T SC-75 TRANSISTOR n 522 MRC025 MRC028 PDF

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


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    PDF

    LPC2148 i2c

    Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
    Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.


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    OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: bbSBTBl 003221b A23 Philips Semiconductors Product specification W A P X NPN 9 GHz wideband transistor crystal X3A-BFR520 . . N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied


    OCR Scan
    003221b X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173) PDF

    BFG520

    Abstract: X3A-BFR520 SOT173 BFP520 BFR520 SOT-173
    Text: P h ilip s S em icon du ctors Produ ct specification •T'3 1-9-0 NPN 9 GHz wideband transistor crystal X3A-BFR520 StE » PHILIPS INTERNATIONAL DESCRIPTION 711DfiEb DDMblOb 2b5 M E C H A N IC A L DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied


    OCR Scan
    X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173) X3A-BFR520 711DfiEb RV-3-5-52/733 BFG520 SOT173 BFP520 BFR520 SOT-173 PDF

    NFE 02 352

    Abstract: KMI 814 equivalent transistor 2 SA 1469 BFR520 BF 914 transistor MRA 843 MRA transistor transistor MJE -1103 ic LC 8712
    Text: 2 ÏÏ£ â S iïi£ S ïiiS 0 0 2 5 5 3 3 N A P IE R 7 flb • P H IL IP S /D IS C R E T E APX Product specification D fe,7 E NPN 9 GHz wideband transistor FEATURES ^ BFR520 PINNING • High power gain • Low noise figure • High transition frequency


    OCR Scan
    0DES533 BFR520 BFR520 tra1000 NFE 02 352 KMI 814 equivalent transistor 2 SA 1469 BF 914 transistor MRA 843 MRA transistor transistor MJE -1103 ic LC 8712 PDF

    SOT173

    Abstract: BFR520 transistor BFG520 BFP520 BFR520 X3A-BFR520
    Text: bbSBTBl 0G3221b ÔE3 W A P X Philips Semiconductors Product specification NPN 9 GHz wideband transistor crystal X3A-BFR520 N AMER PHILIP S/D ISCRETE DESCRIPTION b'IE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied


    OCR Scan
    0G32Slb X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173) X3A-BFR520 URV-3-5-52/733 SOT173 BFR520 transistor BFG520 BFP520 BFR520 PDF

    smd transistor jst

    Abstract: BFG520 bfr505 BFG505 BFR50 BFR520 S221 Y parameters of transistors
    Text: Philips Semiconductors 900 MHz low noise amplifier demoboard Appl,cation report 9 00 MHz LOW NOISE AMPLIFIER DEMOBOARD Summary: The p erformance of wideband transistors, BFG505 BFG520, BFR505, BFR520 is demonstrated in a 900 MHz Low N oise A m p l i f i e r in the frontend of a subscriber handset, (i.e.


    OCR Scan
    BFG505 BFG520, BFR50 BFR520) OT323 OT143 BFG505: BFG505 OT143 LNA505 smd transistor jst BFG520 bfr505 BFR520 S221 Y parameters of transistors PDF

    MRA705

    Abstract: BFR520 MSB003 BFR520 transistor
    Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 telephones CT1, CT2, DECT, etc. , radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems. FEATURES • High power gain • Low noise figure


    OCR Scan
    BFR520 MSB003 MRA705 BFR520 transistor PDF

    BFG520

    Abstract: BFQ67 Philips RF PREAMP cordless phone circuit BFG591 blt81 BFR93AW BFR93A sot103 phone circuit
    Text: RF/Microwave Devices RF Wideband Transistors RF Wideband Transistors for Pagers RF amp see Fig. 1 SOT323 SOT23 SOT143 BFR92AW BFS25A BFS505 BFS520 BFR92A BFT25A BFR505 BFR520 BFG92A/X BFG25A/X BFG505/X BFG520/X MIX see RF amp O SC see RF amp ante nna \ /


    OCR Scan
    OT323 BFR92AW BFS25A BFS505 BFS520 BFR92A BFT25A BFR505 BFR520 OT143 BFG520 BFQ67 Philips RF PREAMP cordless phone circuit BFG591 blt81 BFR93AW BFR93A sot103 phone circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bbS3T31 00ESS33 7flb APX N AflER PHI LIPS/DISCRETE NPN 9 GHz wideband transistor FEATURES Product specification b?E ]> BFR520 e PINNING • High power gain • Low noise figure PIN DESCRIPTION Code: N28 • High transition frequency


    OCR Scan
    bbS3T31 00ESS33 BFR520 BFR520 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor crystal DESCRIPTION X3A-BFR520 MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied as whole wafer, fully tested but unsawn.


    OCR Scan
    X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173) Fau134) PDF