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    BFY81 Search Results

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    BFY81 Price and Stock

    TT Electronics Power and Hybrid / Semelab Limited BFY81

    Transistor, Dual, Npn, To-77; Transistor Polarity:Dual Npn; Collector Emitter Voltage Max Npn:45V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current Npn:10Ma; Continuous Collector Current Pnp:-; No. Of Pins:6Pins Rohs Compliant: Yes |Magnatec BFY81
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark BFY81 Bulk 1
    • 1 $43.27
    • 10 $43.27
    • 100 $37.25
    • 1000 $35.53
    • 10000 $35.53
    Buy Now

    Motorola Semiconductor Products BFY81

    SILICON DUAL MATCHED NPN TRANSISTOR Small Signal Bipolar Transistor, 0.05A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, MO-002AF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA BFY81 360
    • 1 -
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    BFY81 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFY81 Motorola European Master Selection Guide 1986 Scan PDF
    BFY81 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFY81 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFY81 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BFY81 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFY81 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BFY81 Semelab Dual, High Gain, Low Noise, Low Current Type NPN Silicon Transistor Scan PDF
    BFY81 SGS-Ates Shortform Data Book 1977/78 Short Form PDF
    BFY81 SGS-Ates Misc. Data Book Scans 1975/76 Scan PDF
    BFY81 SGS-Ates Semiconductor Data Book 1976/77 Scan PDF
    BFY81DCSM Semelab Dual Bipolar NPN Devices in a Hermetically Sealed LCC2 Ceramic Surface Mount Package for High Reliability Applications Original PDF

    BFY81 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BFY81DCSM

    Abstract: No abstract text available
    Text: BFY81DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15


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    BFY81DCSM MO-041BB) 5/10m 2-Aug-02 BFY81DCSM PDF

    BFY81

    Abstract: DUAL TRANSISTORS IN TO77 PACKAGE LE17 MO-002AF
    Text: SILICON DUAL MATCHED NPN TRANSISTORS BFY81 • Dual Silicon Matched Planar Transistors • Hermetic TO-77 MO-002AF Metal Package. • Ideally Suited For Differential And Low Level Dc Amplifiers • Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)


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    BFY81 MO-002AF) 400mW 500mW 800mW BFY81 DUAL TRANSISTORS IN TO77 PACKAGE LE17 MO-002AF PDF

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    Abstract: No abstract text available
    Text: SILICON DUAL MATCHED NPN TRANSISTORS BFY81 • Dual Silicon Matched Planar Transistors • Hermetic TO-77 MO-002AF Metal Package. • Ideally Suited For Differential And Low Level Dc Amplifiers • Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)


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    BFY81 MO-002AF) 400mW 500mW 800mW PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    E112 jfet

    Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
    Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261


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    LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565 PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


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    2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    BFY81

    Abstract: BE2L
    Text: BFY81 SILICON PLANAR NPN DUAL, LOW-NOISE, LOW-CURRENT AMPLIFIER The BFY 81 is a six term inal device containing tw o isolated high-gain silicon planar epitaxial NPN transistors in Jedec T O -7 7 metal case. The good thermal tracking over a wide current and temperature range offers the c irc u it designer matched transistors w ith specified per­


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    BFY81 BFY81 BE2L PDF

    BFY81

    Abstract: No abstract text available
    Text: 3s BFY81 DUAL, HIGH-GAIN, LOW-NOISE, LOW-CURRENT TYPE NPN DIFFUSED SILICON PLANAR TRANSISTORS PHYSKAl MUCNSKWS G E N ER A L D ESCRIPTIO N - The B F Y 8 1 i s a six terminal device containing two iso la ted high gain NPN double d iffu sed silic o n PLA N A R tran sistors.


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    BFY81 BFY81 PDF

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


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    06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211 PDF

    2N3055E specification

    Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package
    Text: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349


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    ai331 2N2906\ 2N2906A* 2N2907 2N2907A 2N2913y 2N2914\ 2N2915 2N2916 2N2917 2N3055E specification 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    2n3866s

    Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
    Text: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1


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    BYV34-300SM BYV34-400ASM BYV34-- 400RSM 400SM BYV34-500ASM BYV34-500RSM BYV34-500SM LM137-SM 2n3866s DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82 PDF

    BFY83

    Abstract: BLY48
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BFT37A CECC BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFT57 BFT58 BFT59 BFT60 BFT61 BFT62 BFT69 BFT70 BFT71 BFT79 BFT80 BFT81 BFW16 BFW43 BFW44 BFX11 BFX15 BFX17 BFX29 BFX30 BFX34


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    BFT37A BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFY83 BLY48 PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    2N3806 2N3906

    Abstract: 2N3907 2N3904DCSM 2N2222ADCSM hirel bfy81 2N2640DCSM 2N3904D
    Text: 37E S E M E L A B LTD 5133167 □□□□□17 T> fl ISMLB 7 Type No. Reliability Polarity Option 2N3763 2N3764 2N3765 2N3766 2N3767 HI-REL HI-REL HI-REL HI-REL HI-REL PNP PNP PNP NPN NPN 2N3771 2N3772 2N3773 2N3782 2N3789 SCREEN SCREEN SCREEN SCREEN CECC ^


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    2N3763 2N3764 2N3765 2N3766 2N3767 2N3771 2N3772 2N3773 2N3782 2N3789 2N3806 2N3906 2N3907 2N3904DCSM 2N2222ADCSM hirel bfy81 2N2640DCSM 2N3904D PDF

    2n2222a SOT23

    Abstract: 2N3904DCSM 2n1485 2N2453 2N3680 2n2222 sot23 BFX81 2N1132 2N1483 2N1484
    Text: L -S tl'-O f " T - 3 3 - o7 iS E M E L A B MANUFACTURING • 37E SEMELAB LTD 6133167 □ □ □0CH 7 Package v CEO "2N 708'\ CV-0 2N 697 CV-0 2N 930 4 CV-0 2N1132 CV-0 2N1483/ CV-0 BS-0 NPN NPN NPN PNP NPN T018 T039 T018 T039 T08 15 40 45 35 40 0.1 0.5 0.1


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    T-33-Ã 2N1132 2N1483/ 2N1484^ 2N1485 2N1486 2N1613 2N1711 2N2060 2N2192 2n2222a SOT23 2N3904DCSM 2n1485 2N2453 2N3680 2n2222 sot23 BFX81 2N1483 2N1484 PDF

    BFX36

    Abstract: 110H BFX81 BFY64 BFY84 BFT53 BFT54 BFT57 BFT58 BFT59
    Text: Ô133107 4ÔE D G0G0451 SEMELABI 33S ISMLB SEMELAB LTD BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code BFTW REQ REQ REQ HE HE HE HR HE HR HR HE HE HR HE HE EEQ REQ REQ HR HR REQ EEQ KEQ CECC HR KEQ EEQ EEQ EEQ EEQ REQ HE HR HK HE


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    G0G0451 25min 10/30m BFT53 10min BFT54 30min BFT57 BFX36 110H BFX81 BFY64 BFY84 BFT58 BFT59 PDF

    BFX36

    Abstract: 2N3904DCSM 2N3904D 2N3680 BFT39 2N2222ADCSM BFX11 BFY84 BLY11 BFT40
    Text: 37E D SEMELAB LTD 31331B7 OOOODTb fl jl S E M E L A B MANUFACTURING! • c BS/CECC Polarity Package v CEO cont h F E BFT37 BFT39 BFT40 BFT41 BFT57 BS-0 BS-0 BS-0 BS-0 BS-0 PNP NPN NPN NPN NPN T039 T039 T039 T039 T018 100 80 60 50 160 5 1 1 1 0.2 50-200 250 typ


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    fll331fl7 BFT37 BFT39 BFT40 BFT41 BFT57 BFT58 BFT59 BFT60 BFT61 BFX36 2N3904DCSM 2N3904D 2N3680 2N2222ADCSM BFX11 BFY84 BLY11 PDF

    2N3904DCSM

    Abstract: 2N2222ADCSM 2NA931 2N3810DCSM 2NA999 2NA930
    Text: Ö1331Ö7 GGD043Ö TT1 4 ÔE D SEMELABL SEMELAB IS MLB LTD * 27. ^ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2NA898 2N4899 2NA900 2NA901 2N4902 2NA903 2NA90A 2NA905 2NA906 2NA907 2NA908 2NA909 2NA910 2NA911 2NA912 2NA913 2NA91A


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    GGD043Ö 2NA898 2N4899 2NA900 2NA901 2N4902 2NA903 2NA90A 2NA905 2NA906 2N3904DCSM 2N2222ADCSM 2NA931 2N3810DCSM 2NA999 2NA930 PDF

    md5000a

    Abstract: BFX36 MD5000 MFQ930 P/C MFQ6660 P/C BFX11 IRFE110 IRFE111 IRFE113 IRFE9120
    Text: MULTIPLE SMALL-SIGNAL TRANSISTORS continued QUAD TMOS FETS rds (ON) Devices (£2) Max VGS (H7) @ ID (A) Min V(BR)DSS IDSS (V) @ VDS Max (V) ID (m A) @ VDS (V) (UA) Max (V) Min @ ID (VA) CISS IGSS (nA) Max @ VGS (V) CRSS ton toff (pf) Max @ VDS (V) (P0 Max


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    MFQ930 MFQ960 MFQ990 MFQ1000 MFQ6660 IRFE110 MD3251AF MD3467 MD3467F MD3725 md5000a BFX36 MD5000 MFQ930 P/C MFQ6660 P/C BFX11 IRFE111 IRFE113 IRFE9120 PDF

    2C415

    Abstract: SGS-ATES dual 2c425 2C425 2C111 2C444 BFX36 BFX81 BFX79 sgs-ates transistors BFY83
    Text: S G S -A T E S Sem iconductors Transistors-Dual Dual Transistors NPN and PN P REFERENCE T A B L E Code Polarity Max. P0(W) Min. LVCEO Ic Range (mA) Min. Max. hFE & VCE(sat) BFX11 I’ NP 0.5 45 0.001-500 80 BFX36 PNP 0.6 60 0 .0 01 -1 0 0 100 0.25 - @ hFE,


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    BFX11 19040F BFX36 9048A BFY81 9072A BFY82 19073X BFY83 19074H 2C415 SGS-ATES dual 2c425 2C425 2C111 2C444 BFX81 BFX79 sgs-ates transistors PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    HBF4727A

    Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
    Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product


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