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    BGY212A Price and Stock

    NXP Semiconductors BGY212A

    NARROW BAND HIGH POWER; Package Body Material: CERAMIC; Technology: HYBRID; Maximum Operating Temperature: 100 Cel; Minimum Operating Frequency: 1710 MHz; No. of Functions: 1;
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    BGY212A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BGY212A Philips Semiconductors UHF Amplifier Module Original PDF

    BGY212A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor D 1710

    Abstract: TRANSISTOR D 1785 BGY212A pn1999 BGY21
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D373 BGY212A UHF amplifier module Preliminary specification 1999 Aug 23 Philips Semiconductors Preliminary specification UHF amplifier module BGY212A PINNING - SOT482C FEATURES • 3.5 V nominal supply voltage


    Original     		M3D373 BGY212A OT482C BGY212A OT482C cove825 budgetnum/printrun/ed/pp11 transistor D 1710 TRANSISTOR D 1785 pn1999 BGY21 PDF

    Philips TdA3619

    Abstract: on4408 tda3619 on4827 TDA5247HT on4785 OF622 FAST RECOVERY DIODE ON4913 on4802 OQ9811T
    Text: PRODUCT DISCONTINUATION DN43 NOTICE June 30, 2000 Exhibit A SEE DN43 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


    Original     		PDF