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    BSR56 Price and Stock

    onsemi BSR56

    JFET N-CH 40V SOT23-3
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    BSR56 Cut Tape
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    Quest Components BSR56 574
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    NXP Semiconductors BSR56,215

    JFET N-CH 40V 20MA SOT23
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    SMC Corporation of America LESH25LAK-50BS-R56ND

    ELECTRIC SLIDE TABLE/HIGH RIGIDITY TYPE, LES SERIES | SMC Corporation LESH25LAK-50BS-R56ND
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    SMC Corporation of America LESH25LK-50BS-R56N3D

    ELECTRIC SLIDE TABLE/HIGH RIGIDITY TYPE, LES SERIES | SMC Corporation LESH25LK-50BS-R56N3D
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    SMC Corporation of America LESH25RAK-50BS-R56ND

    ELECTRIC SLIDE TABLE/HIGH RIGIDITY TYPE, LES SERIES | SMC Corporation LESH25RAK-50BS-R56ND
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    BSR56 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSR56 Fairchild Semiconductor Junction FET (JFET) Original PDF
    BSR56 Philips Semiconductors N-channel FETs Original PDF
    BSR56 Philips Semiconductors N-Channel FETS Original PDF
    BSR56 Motorola JFET Switching Transistor N-Channel Scan PDF
    BSR56 Motorola N-channel JFET switching transistor. Scan PDF
    BSR56 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BSR56 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSR56 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BSR56 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BSR56 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BSR56 National Semiconductor JFET Pro Electron Series Scan PDF
    BSR56 National Semiconductor JFET Pro Electron Series Scan PDF
    BSR56 National Semiconductor JFET PRO ELECTRON Series Scan PDF
    BSR56 National Semiconductor JFET Pro Electron Series Scan PDF
    BSR56 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BSR56,215 NXP Semiconductors N-channel FETs - CRS: 5 pF; IDSS: 50 mA; IDSS min.: 50 mA; IG: 50 mA; RDS(on): 25 Ohm; toff: 25 ns; -V(P)GS: 4 to 10 V; V(P)GS: 4 V; V(P)GS: 10 V; VDSmax: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BSR56L Motorola JFET Switching Transistors Scan PDF
    BSR56 T/R Philips Semiconductors FET Transistor, Depletion, N Channel, ID 5mA, Tape and Reel Original PDF
    BSR56TR Philips Semiconductors N-channel FET Original PDF
    BSR56T/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    BSR56 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSR58

    Abstract: BSR56 BSR57 sot23 marking code
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BSR56; BSR57; BSR58 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DESCRIPTION Symmetrical silicon n-channel


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    PDF BSR56; BSR57; BSR58 MAM385 BSR58 BSR56 BSR57 sot23 marking code

    BSR56

    Abstract: No abstract text available
    Text: BSR56 BSR56 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 Mark: M4 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted


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    PDF BSR56 OT-23 BSR56

    BSR56

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BSR56; BSR57; BSR58 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DESCRIPTION Symmetrical silicon n-channel


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    PDF BSR56; BSR57; BSR58 MAM385 BSR56

    BSR56

    Abstract: No abstract text available
    Text: BSR56 BSR56 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 Mark: M4 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted


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    PDF BSR56 OT-23 BSR56

    BSR57

    Abstract: BSR56
    Text: BSR56; BSR57; BSR58 N-channel FETs Rev. 3 — 25 June 2014 Product data sheet 1. Product profile 1.1 General description Symmetrical silicon N-channel depletion type junction field-effect transistors FETs in a plastic microminiature envelope designed for application in thick and thin-film circuits. The


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    PDF BSR56; BSR57; BSR58 BSR56 BSR57 BSR56

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


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    PDF

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


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    PDF

    2N5459

    Abstract: 2N5485 mpf102 KSK161 mpf102 equivalent J107 diode J113 equivalent J201 N-channel JFET transistor j210 2N5485 MMBFJ177
    Text: Discrete JFETs Products PD VGS off BVGDS Power (V) Dissipation Min (V) Typ (V) Max (V) (mW) IDSS GFS @ ID (uA) @ VDS (V) Min (mA) Max (mA) @ VDS (V) Min (mS) Typ (mS) Max (mS) RDS (Ohm) ID (off) (uA) SOT-223 N-Channel JFTJ105 25 1000 4.5 - 10 1 5 500 - 15


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    PDF OT-223 JFTJ105 KSK211 KSK595 MMBF5484 MMBF5485 P1086 2N5460 2N5461 2N5462 2N5459 2N5485 mpf102 KSK161 mpf102 equivalent J107 diode J113 equivalent J201 N-channel JFET transistor j210 2N5485 MMBFJ177

    CS9013

    Abstract: CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac
    Text: Discrete POWER & Signal Technologies Pro Electron Diode Series Leaded Switching Diodes Device No. Vrrm I rrm V Min (nA) Min BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62 BAW76 BAX13 BAX16 BAY19 75 50 50 150 100 BAY71 BAY72


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    PDF BAV19 BAV20 BAV21 BAV102 BAV103 BAW62 BAW76 BAX13 BAX16 BAY19 CS9013 CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    2n4392 SPECIFICATION

    Abstract: SST4856 BSR58 equivalent SST4092 VCR2N equivalent SST4857 2N4858 equivalent SST4860 2N4856 SILICONIX SST4858
    Text: Siliconix incorporated HIGH GAIN JFET AMPLIFIERS Cont'd en 'DSS PART# V(BR)GSS (V) MIN MAX (mA) 'GSS (PA) 9fs 9 os (mS) (nS) C| SS (PF) C rs s (PF) 7 12 12 12 13 13 13 12 12 12 3 3.5 3.5 3.5 3.5 3.8 4 3.5 3.5 3.5 4 3 3 3 3 3 3 3 3 3 1 1 1 4 4 4 3.5 3.5 3.5


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    PDF OT-23 SST113 SST4091 SST4092 SST4093 SST4391 SST4392 SST4393 SST4859 SST4860 2n4392 SPECIFICATION SST4856 BSR58 equivalent VCR2N equivalent SST4857 2N4858 equivalent 2N4856 SILICONIX SST4858

    marking ZS SOT-23

    Abstract: marking M2 JFET BSR56
    Text: SILICONIX INC ÎÔE D • 0254735 0G13öbT 7 ■ BSR56 SERIES J 7 IS S & 1 T-35-Z.S N-Channel JFETs The BSR56 Series Is a n-ohannel JFET mounted in our popular SOT-23 package, Its low cost and c d s ON make It a good choice for an all-purpose analog switch, while Its high gfa' and good


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    PDF BSR56 OT-23 T-35-Z BSR57 BSR58 OT-23 marking ZS SOT-23 marking M2 JFET

    BSR56

    Abstract: BSR57 BSR58
    Text: BSR56 BSR57 BSR58 TllDflSb OObTSbS TT5 « P H I N J V . N -C H A N N E L FETS S ym m etrical silicon n-channel d e p le tio n ty p e ju n c tio n fie ld -e ffe c t transistors in a plastic m icro m in ia tu re envelope intended fo r a p p lica tio n in th ic k and th in -film circu its. The transistors are intended fo r low power, chopper or sw itch in g applications in industrial service.


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    PDF BSR56 BSR57 BSR58 bsr56 bsr57 bsr58Vqsm BSR56; BSR58

    marking wh sot-23

    Abstract: BSR56 BSR56L BSR57 BSR57L BSR58 BSR58L BSR67 DIODES MARKING M5
    Text: M O T O R O L A SC XSTRS/R F 12E 0 | b3 t ? a S M O G a t t a ? 4 | M A X IM U M RATINGS Rating BSR56L' Symbol Value U nit Drain-Source Voltage —VDS 40 V Drain-Gate Voltage V dg 40 V thru Gate-Source Voltage Vg s 40 V Forward Gate Current 'G f 50 mA BSR58L


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    PDF BSR56L' BSR58L OT-23 O-236AB) BSR56L BSR67L BSR58L BSR56; marking wh sot-23 BSR56 BSR57 BSR57L BSR58 BSR67 DIODES MARKING M5

    BSR56

    Abstract: BSR57 BSR58
    Text: BSR56 BSR57 BSR58 TllDflSb O O b T S b S TT5 • PHIN N -C H A N N E L FETS S ym m etrical silicon n-channel d e p le tio n ty p e ju n c tio n fie ld -e ffe c t transistors in a plastic m icro m in ia tu re envelope intended fo r a p p lica tio n in th ic k and th in -film circu its. The transistors are intended fo r low power, chopper or sw itch in g applications in industrial service.


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    PDF BSR56 BSR57 BSR58 711002b BSR58

    Untitled

    Abstract: No abstract text available
    Text: Pro Electron Series Discrete POWER & Signal Technologies National Semiconductor BVgss Device No. Case Style BF244A BF244B BF244C BF245A TO-92 TO-92 TO-92 TO-92 30 30 30 30 1 1 1 BF245B BF245C B F 256A BF256B TO-92 TO-92 TO-92 TO-92 2-80 BF256C TO-92 BSR56 TO-236


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    PDF BF244A BF244B BF244C BF245A BF245B BF245C BF256B BF256C BSR56 O-236

    BSR57L

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F 12E D | b3t.7aS4 aOôtbû? 4 | X'ZS' M A X IM U M RATINGS Rating BSR56L' Symbol Value U nit Drain-Source Voltage ^ V ds 40 V Drain-Gate Voltage Vdg 40 V thru Gate-Source Voltage Vg s 40 V Forward Gate Current 'G f 50 mA BSR58L CASE 318-03, STYLE 10


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    PDF BSR56L' BSR58L OT-23 O-236AB) BSR58L BSR56L BSR57L

    BSR56

    Abstract: No abstract text available
    Text: • bbS3T31 D03SS33 311 H A P X N AMER PHILIPS/DISCRETE BSR56 BSR57 BSR58 b7E D y v N-CHANNEL FETS Symmetrical silicon n-channel depletion type ju nctio n field-effect transistors in a plastic m icrom iniature envelope intended fo r application in thick and th in -film circuits. The transistors are intended fo r lowpower, chopper or switching applications in industrial service.


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    PDF bbS3T31 D03SS33 BSR56 BSR57 BSR58 Drain-R56 BSR56; BSR57; BSR56

    BSR56

    Abstract: BSR58 BSR57
    Text: • bbsa'm 00255^ BSR56 BSR57 BSR58 311 ■ APX N AMER PHILIPS/DISCRETE b7E D N-CHANNEL FETS Symm etrical silicon n-channel depletion type junction field-effect transistors in a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for lowpower, chopper or switching applications in industrial service.


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    PDF BSR56 BSR57 BSR58 BSR56 BSR57 7Z60927 BSR56; BSR57; BSR58; BSR58

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


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    PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    sot23 marking M6p

    Abstract: PMBFJ111 PMBFJ174
    Text: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER


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    PDF OT143 OT343 BF510 BF994S BST120 BF511 BF996S BST122 BF512 BF997 sot23 marking M6p PMBFJ111 PMBFJ174

    sot-23 MARKING CODE ZA

    Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
    Text: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same


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    PDF OT-23, OT-89 OT-143 BZV49 OT-23 2SC2059K sot-23 MARKING CODE ZA b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    fr5 transistor

    Abstract: bfs17 Motorola transistor SOT23 w7 BSR56 motorola MN transistor BFS17 BSR57 BSR58 BSS63 BSS64
    Text: n O T O R O L A SC Í X S T R S / R 6367254 F> W|b3b?5SM "Tt MOTOROLA SC XSTRß/R OüantM 96D 8 1 9 6 4 F D r - 3 h / s M A X IM U M R A TIN G S Sym bol Value U nit Collector-Em itter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 25 Vdc Sym bol Max U nit


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    PDF BFS17 fr5 transistor bfs17 Motorola transistor SOT23 w7 BSR56 motorola MN transistor BFS17 BSR57 BSR58 BSS63 BSS64