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    B803A

    Abstract: b-803a
    Text: CEP803ALVCEB803AL March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 5 2 A , R ds o n =1 5m Q @ V g s =1 0V. RDS(ON)=25mfl @ V gs = 4 .5 V . • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability.


    OCR Scan     		CEP803AL/CEB803AL O-220 O-263 to-263 to-220 B803A b-803a PDF