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    Abstract: No abstract text available
    Text: ChenYang Technologies GmbH & Co. KG CYSJ166A GaAs HALL-EFFECT ELEMENTS CYSJ166A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.


    Original     		CYSJ166A D-85464 PDF

    CYSJ166A

    Abstract: No abstract text available
    Text: ChenYang Technologies GmbH & Co. KG CYSJ166A GaAs HALL-EFFECT ELEMENTS CYSJ166A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.


    Original     		CYSJ166A D-85464 PDF