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    philips power transistor bd139

    Abstract: BU406F BU407F 407F
    Text: N AUER PHILIPS/DISCRETE bbiS3^31 D02fl53G 7M1! M A P X bU 4UblBU 407F bTE D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er transistor in a SO T186 envelope w ith ele c tric a lly Isolated m ounting base, intended fo r use in converters, inverters, sw itching regulators


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    D02fl53G bU4Ubl-BU407F OT186 BU406F philips power transistor bd139 BU407F 407F PDF