NJ32
Abstract: THJ5486 THJ5459 THJ5484 THJ5485 THJ55456 THJ55466 THJ55476
Text: ALL E GR O M I C R O S Y S T E M S 8514019 SPRAGUE. INC T3 » • D50433Ô SE M IC O N D S/IC S D D G 3 S 6 1 3 ■ ALÛR 93D 0 3 5 8 1 3 > 7"-2 ?*2.S JUNCTION FIELD-EFFECT TRANSISTO R CH IPS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oh
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D5D433fi
DQQ3S61
THJ5459
THJ5484
THJ5485
THJ6449
THJ5450
THJ6451
NJ132L
THJ6452
NJ32
THJ5486
THJ55456
THJ55466
THJ55476
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC LIE » • D50433B □□□SflhS B4b ■ ALGR 2061 THRU 2069 1.5 A DARLINGTON SWITCHES High-voltage, high-current Darlington arrays ULN2061M through ULN2069B are designed for interface between low-level logic and a variety of peripheral loads such as relays, solenoids, dc and stepper
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D50433B
ULN2061M
ULN2069B
ULN2064/65B
D50433Ã
ULN2064LB
ULN2068LB
D504336
LN-2064/66B
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TRANSISTOR ba 751
Abstract: TRANSISTOR 751
Text: ALLEGRO MICROSYSTEMS INC ^3 D • D50433fl GDDSbST 3 ■ T - PRO CESS BNB 9 Process BNB NPN Darlington Transistor Process BNB is a double-diffused epitaxial planar NPN silicon Darlington pair. It is designed for use in high-gain, high-current amplifier circuits. Its comple
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D50M33fl
1000mA
0S0433Ã
0003bb0
TRANSISTOR ba 751
TRANSISTOR 751
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1N914
Abstract: No abstract text available
Text: T3D J> • ALLEGRO MICROSYSTEMS INC D50433fl 00037^5 0 ■ ALGR PROCESS TTU Process TTU High-Speed Switching Diode A gold-doped silicon epitaxial diode used primarily in high-speed switching applications, Process TTU, with its P-type substrate, is the N P counterpart of PN
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1N914
500mA
Vn-20
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2851 transistor npn
Abstract: A1409-1 Transistor A14 2N2907 A-04 a1-4095 PNP 2N2907
Text: ALLE6R0 MICROSYSTEMS INC T3 D • D50433fl G003b47 7 ■ ALGR PROCESS BDA 9 / “0/ Process BDA PNP Small-Signal Transistor A general-purpose PNP transistor, Process BDA is used as a low-noise, high-gain amplifier and as a medium-power switcher at frequencies from dc to
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0S0433Ã
CI003L
-H053
2851 transistor npn
A1409-1
Transistor A14
2N2907
A-04
a1-4095
PNP 2N2907
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transistor a13
Abstract: 2912 TRANSISTOR PNP A13 transistor 2912 npn D5043
Text: ALLEGRO MICROSYSTEMS INC 13 D • D50433Ö 00D3707 T ■ ALGR T -9 1 -0 1 PROCESS JMA Process JMA PNP Small-Signal Transistor Process JM A is a P N P double-diffused Silicon epi taxial planar transistor. Process JM A finds broad ap plication as a medium-power amplifier and switching
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D50433A
T-91-01
DDD37GÃ
transistor a13
2912 TRANSISTOR PNP
A13 transistor
2912 npn
D5043
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Hall Effect 3 pin ugn
Abstract: car pulse hall sensor UGN HALL Sprague Hall Effect sensor hall 4.5 24 pulse Ay hall sensor waveform of hall effect sensor UGS3056U
Text: AL LE GR O MICROSYSTEMS INC m 0SDM33S D ü G Mñ M T AL GR r-6 £ *-0 5 * AND 27612 U G S 3056 U: HALL EFFECT DIGITAL GEAR-TOOTH SENSORS WITHZERO-RPM CAPABILITY The Sprague Types UGN3056U and UGS3056U Hall effect digital gear-tooth sensors are bipolar integrated circuits that switch ON and
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0SDM33S
UGN3056U
UGS3056U
Hall Effect 3 pin ugn
car pulse hall sensor
UGN HALL
Sprague Hall Effect
sensor hall 4.5 24 pulse
Ay hall sensor
waveform of hall effect sensor
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tpq2907
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 S P R A GU E. T3 D • 05G433Ô GGD3ÔD7 3 ■ ALGR S E M I C O N D S / ICS 93 D 0 3 8 0 7 3 SE R IE S TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS O P R A G U E SERIES TPQ quad transistor arrays ^ are general-purpose silicon tran sisto r arrays
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05G433Ã
14-pin
TPQ7051
TPQ6700
TPQ6600A
TPQ6600
TPQ6502
2N3904
2N3906
tpq2907
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Untitled
Abstract: No abstract text available
Text: 3-PHASE BRUSHLESS DC MOTOR CONTROLLER/DRIVER WITH BACK-EMF SENSING The A8905CLB isw a three-phase brushless dc motor controller/ driver for use with CD-ROM or DVD drives. The three half-bridge outputs are low on-resistance n-channel DMOS devices capable of
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A8905CLB
50433A
1043j_
MA-Q08-25A
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC TB ] • 0504330 0003bS5 b ■ ALGR r - 9 )• O i PROCESS BLA Process BLA NPN High-Voltage Transistor The NPN process BLA transistor is a double diffused silicon epitaxial planar device used primarily in video circuits and similar high-voltage, low-current
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0003bS5
D50433Ã
GG03b5b
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Untitled
Abstract: No abstract text available
Text: HALL-EFFECT GEAR-TOOTH SENSORS-ZERO SPEED The A3056EU/LU and A3058EU/LU Hall effect gear-tooth sensors are monolithic integrated circuits that switch in response to differential magnetic fields created by ferrous targets. These devices are ideal for use in gear-tooth-based speed, position, and timing applications and
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A3056EU/LU
A3058EU/LU
A3056Eupply
D50433Ã
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BEC npn
Abstract: SOT-23 EBC PT2221 N54 SOT-23
Text: ALLEGRO MICROSYSTEMS INC blE D • D5G433Ô 000^365 T17 M A L 6 R NPN TRANSISTORS S O T -2 3 /T O -2 3 6 A B 3 2 S /M / ELECTRICAL CHARACTERISTICS at TA = 25°C M a rkin g Type 8 D e v ic e 3 i < ^CBO V BR CFO V (V) (BR)EBO M ax . @ VCB (V) <nA) (V) vCE(sat|
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D5G433Ô
BEC npn
SOT-23 EBC
PT2221
N54 SOT-23
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Untitled
Abstract: No abstract text available
Text: A L LE GR O M I C R O S Y S T E M S INC T3 D • D S O l433ñ D G 0 3 7 7 3 1 ■ AL GR T-91-01 P R O C E S S PJ32 Process PJ32 P-Channel Junction Field-Effect Transistor Process PJ32 is a P-channel junction field-effect transistor designed a s a complement to P rocess
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T-91-01
100Hz
D50433A
0DQ3774
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Untitled
Abstract: No abstract text available
Text: BiMOS I I 8-B IT SERIAL-INPUT, LATCHED DRIVERS The merging of low-power CMOS logic and bipolar output power drivers permit the UCN5841/42A, and A5841/42SLW integrated circuits to be used in a wide variety of peripheral power driver applications. Each device has an eight-bit CMOS shift register and CMOS control
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UCN5841/42A,
A5841/42SLW
UCN5841A,
A5841SLW,
A5842SLW,
UCN5842A
A5842SLW
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Untitled
Abstract: No abstract text available
Text: LOW-DROPOUT REGULATORS — HIGH EFFICIENCY A8188SLU-XX O CQ D W 1 2 3 Û z CÛ ID CD CO LU LU < LU Dwg. P S -0 21-2 where “-xx" is the required output voltagefc|iWft8&, ABSOLUTE MAXIMUM RATINGS 10 V Input V oltage,^ . Peak Output'dttrrent EnabJ%lri'p|^ôltaget VE^
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A8188SLU-XX
juncti18
D50433Ã
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Untitled
Abstract: No abstract text available
Text: LOW-DROPOUT ; 3 V REGULATOR — HIGH EFFICIENCY Designed specifically to meet the requirement for extended opera tion of battery-powered equipment such as cordless and cellular telephones, the A8184SLT voltage regulator offers the reduced dropout voltage and quiescent current essential for maximum battery life.
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A8184SLT
GP-051-2
GP-058
GP-054-1
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Untitled
Abstract: No abstract text available
Text: 8-CHANNEL SATURATED SINK DRIVERS Developed for use with low-voltage LED and incandescent displays requiring low output saturation voltage, the UDN2595A and UDN2595LW meet many interface needs, including those exceeding the capabilities of standard logic buffers. The eight non-Darlington
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UDN2595A
UDN2595LW
UDN2595LW
UDN2595A
GP-018B
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Untitled
Abstract: No abstract text available
Text: f Data Sheet 27627.125 ATS6; 2LSA ZERO-SPEED, SELF-CALIBRATING, N O N -O RIEN TEV, HALL-EFFECT GEA R -TO O TH SENSOR The ATS632LSA gear-tooth sensor is an optimized Hall-effect IC/ magnet combination that provides extremely accurate tabth edge detection when used with large-pitch targets. The ¿^Kttuubassembly
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ATS632LSA
Mhf017
0S0433A
8737b
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Untitled
Abstract: No abstract text available
Text: LOW-DROPOUT, 3 V REGULATOR — HIGH EFFICIENCY Designed specifically to meet the requirement for extended opera tion of battery-powered equipment such as cordless and cellular telephones, the A8183SLU voltage regulator offers the reduced dropout voltage and quiescent current essential for maximum battery life.
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A8183SLU
D50433A
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MA40S
Abstract: MA40S-3irn A3144 D 3141 transistor SENSITIVE HALL-EFFECT SWITCHES A3141 A3143 RFT hall UGN 3141 D5DM
Text: l i i i i SEN SITIVE HALL-EFFECT SW ITCH ES FOR H IG H - TEM PERATURE OPERATIO N These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +1506C, and are more stable with both
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PH-003A
DS0433Ã
MA40S
MA40S-3irn
A3144
D 3141 transistor
SENSITIVE HALL-EFFECT SWITCHES
A3141
A3143
RFT hall
UGN 3141
D5DM
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Untitled
Abstract: No abstract text available
Text: SMOKE DETECTOR WITH INTERCONNECT AND TIMER guard 2 D ETEC T. IN GUARDi SENSITIVITY SET O S C . C AP. horn2 H 0R N 1 - SUPPLY The A5348CA is a low-current, CMOS circuit providing all of the required features for an ionization-type smoke detector. A networking
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A5348CA
UL217.
S0H33Ã
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Untitled
Abstract: No abstract text available
Text: HALL-EFFECT SWITCHES FOR IIIGH-TEMPERATURE OPERATION These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +150°C, and are more stable with both temperature and supply voltage changes. The unipolar switching
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MH-008-2
MH-002-2
GH-042
MH-011-2A
0S0433Ã
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