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    CS81

    Abstract: DS06-20206-1E 3813K 0.18-um CMOS standard cell library inverter
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20206-1E Semicustom CMOS Standard cell array CS81 Series • DESCRIPTION The CS81 series of 0.18 µm CMOS standard cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    Original     		DS06-20206-1E CS81 DS06-20206-1E 3813K 0.18-um CMOS standard cell library inverter PDF

    CS91 Series

    Abstract: CS91 fujitsu inverter air F0609
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20208-3E Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 µm CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16


    Original     		DS06-20208-3E F0609 CS91 Series CS91 fujitsu inverter air F0609 PDF

    CE81

    Abstract: floor plan for 4 bit adder 722k
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20110-5Ea Semicustom CMOS Embedded array CE81 Series • DESCRIPTION The CE81 series 0.18 m CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 34 million gates which have a gate delay time of 12 ps, resulting in both integration


    Original     		DS06-20110-5Ea CE81 floor plan for 4 bit adder 722k PDF

    DS06-20112-1E

    Abstract: CE77
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20112-1E Semicustom CMOS Embedded array CE77 Series • DESCRIPTION The CE77 series 0.25 µm CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    Original     		DS06-20112-1E F0204 DS06-20112-1E CE77 PDF

    mb89371

    Abstract: MB89371AH mb89371a Visitor counter a calculator LCD display china usb dvd player repair guide PG00-00072-3E MB91305PMC-G-BNDE1 MB90F378 mb89537a 565 MB90350E
    Text: FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94085-5401, U.S.A. Tel: +1-408-737-5600, Fax: +1-408-737-5999 http://www.fma.fujitsu.com/


    Original     		PG00-00072-3E mb89371 MB89371AH mb89371a Visitor counter a calculator LCD display china usb dvd player repair guide PG00-00072-3E MB91305PMC-G-BNDE1 MB90F378 mb89537a 565 MB90350E PDF

    CE77

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20112-2Ea Semicustom CMOS Embedded array CE77 Series • DESCRIPTION The CE77 series 0.25 m CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    Original     		DS06-20112-2Ea CE77 PDF

    ARM1176JZF-S

    Abstract: ARM1176JZF 90 nm CMOS CS101 ARM1176 fujitsu inverter air "Single-Port RAM"
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20210-3Ea Semicustom CMOS Standard Cell CS101 Series • DESCRIPTION CS101 series, a 90 nm standard cell product, is a CMOS ASIC that satisfies user’s demands for lower power consumption and higher speed. The leakage current of the transistors is the minimum level in the industry. Three


    Original     		DS06-20210-3Ea CS101 ARM1176JZF-S ARM1176JZF 90 nm CMOS ARM1176 fujitsu inverter air "Single-Port RAM" PDF

    CS81

    Abstract: CS86 CS86ML CS86MN CS86MZ fujitsu frv fujitsu fr-v fujitsu inverter air
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20209-3Ea Semicustom CMOS Standard cell CS86 Series • DESCRIPTION The CS86 series of 0.18 m standard cells is a line of CMOS ASICs based on higher integration implemented by introducing wiring pitch reduction technology and on I/O pad placement technology to the conventional CS81


    Original     		DS06-20209-3Ea CS86MN, CS86MZ, CS86ML) CS81 CS86 CS86ML CS86MN CS86MZ fujitsu frv fujitsu fr-v fujitsu inverter air PDF

    CE77

    Abstract: 0.25-um CMOS standard cell library inverter 0.25-um standard cell library
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20112-2E Semicustom CMOS Embedded array CE77 Series • DESCRIPTION The CE77 series 0.25 µm CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    Original     		DS06-20112-2E F0701 CE77 0.25-um CMOS standard cell library inverter 0.25-um standard cell library PDF

    s29gl032n90

    Abstract: MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11
    Text: covPG00-00071e.fm 1 ページ ２００７年５月１０日 木曜日 午前１１時２９分 For further information please contact: Japan FUJITSU LIMITED Electronic Devices Business Unit Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,


    Original     		covPG00-00071e PG00-00071-2E s29gl032n90 MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11 PDF

    S29JL032H70

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS PRODUCT GUIDE 2009.10 Product Guide [ ASSP•Memory•ASIC ] PG00-00091-3E Technical Documentation of Electronic Devices DATA BOOK PRODUCT GUIDE DVD (GENERAL) DATA SHEET MANUAL FUJITSU SEMICONDUCTOR DATA SHEET Semiconductor Data Book


    Original     		PG00-00091-3E ACD-10131 CD-10131 DS04-27211-5E MB3789 S29JL032H70 PDF

    CS81

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20206-5Ea Semicustom CMOS Standard cell CS81 Series • DESCRIPTION The CS81 series 0.18 m CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 40 million gates which have a gate delay time of 11 ps, resulting in both integration


    Original     		DS06-20206-5Ea CS81 PDF

    F0706

    Abstract: MoSys CS201 MoSys 1T sram "Single-Port RAM"
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20211-1E Semicustom CMOS Standard Cell CS201 Series • DESCRIPTION The CS201 series of 65 nm standard cells is a line of CMOS ASICs that satisfy demands for lower power consumption and higher integration. These cells offer the minimum level of leakage current in the semiconductor


    Original     		DS06-20211-1E CS201 F0706 F0706 MoSys MoSys 1T sram "Single-Port RAM" PDF

    CS91

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20208-1E Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 µm CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16


    Original     		DS06-20208-1E F0207 CS91 PDF

    DS06-20206-1E

    Abstract: xl 1225 transistor CS81 0.18-um CMOS standard cell library inverter
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS06-20206-1E Semicustom CMOS Standard cell array CS81 Series • DESCRIPTION The CS81 series of 0.18 µm CMOS standard cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    Original     		DS06-20206-1E DS06-20206-1E xl 1225 transistor CS81 0.18-um CMOS standard cell library inverter PDF

    f0602

    Abstract: CS101 "Single-Port RAM"
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20210-2E Semicustom CMOS Standard Cell CS101 Series • DESCRIPTION CS101 series, a 90 nm standard cell product, is a CMOS ASIC that satisfies user’s demands for lower power consumption and higher speed. The leakage current of the transistors is the minimum level in the industry. Three


    Original     		DS06-20210-2E CS101 F0602 f0602 "Single-Port RAM" PDF

    CS86MN

    Abstract: 0.18-um CMOS technology characteristics CS81 CS86 CS86ML CS86MZ DS06-20209-1E 0.18-um CMOS standard cell library inverter
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20209-1E Semicustom CMOS Standard cell CS86 Series • DESCRIPTION The CS86 series of 0.18 µm standard cells is a line of CMOS ASICs based on higher integration implemented by introducing wiring pitch reduction technology and on I/O pad placement technology to the conventional CS81


    Original     		DS06-20209-1E CS86MN, CS86MZ, CS86ML) F0306 CS86MN 0.18-um CMOS technology characteristics CS81 CS86 CS86ML CS86MZ DS06-20209-1E 0.18-um CMOS standard cell library inverter PDF

    DS06-20110-5E

    Abstract: CE81 0.18-um CMOS standard cell library inverter
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20110-5E Semicustom CMOS Embedded array CE81 Series • DESCRIPTION The CE81 series 0.18 µm CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 34 million gates which have a gate delay time of 12 ps, resulting in both integration


    Original     		DS06-20110-5E F0612 DS06-20110-5E CE81 0.18-um CMOS standard cell library inverter PDF

    f9906

    Abstract: xl 1225 CE81 Fujitsu inverter 0.18-um CMOS standard cell library inverter
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20110-1E Semicustom CMOS Macro embedded type cell array CE81 Series • DESCRIPTION The CE81 series of 0.18 µm CMOS macro-embedded cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    Original     		DS06-20110-1E f9906 xl 1225 CE81 Fujitsu inverter 0.18-um CMOS standard cell library inverter PDF

    f9906

    Abstract: CE81 0.18-um CMOS standard cell library inverter
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS06-20110-1E Semicustom CMOS Macro embedded type cell array CE81 Series • DESCRIPTION The CE81 series of 0.18 µm CMOS macro-embedded cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    Original     		DS06-20110-1E f9906 CE81 0.18-um CMOS standard cell library inverter PDF

    DS0620

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS0620 TM EX Professional Developer’s Upgrade Kit for DS9092K FEATURES TOUCH MEMORY EXECUTIVE TMEX Software Layers • Software support package for the Touch Memory Executive TMEX fwppU C A T fpA/ Fila Structure Multi-Tasking • Language-independent support for the Touch


    OCR Scan     		DS0620 DS9092K DS9097 PDF

    DS1868

    Abstract: LM 4440 AUDIO AMPLIFIER CIRCUIT DS1230y-200 battery date codes circuit diagram laptop motherboard Scans-049 texas instrument catalog 74ls DS1666-50 st c031 s1040 diode
    Text: S ystem E x t e n s i o n Data Book CPU Supervisors Digital Potentiometers Silicon Timed Circuits Thermal Products DALLAS SEMICONDUCTOR Copyright 1994 Dallas Semiconductor Corporation, Dallas, Texas All Rights Reserved. Circuit diagrams are included to illustrate typical semiconductor applications. Complete information sufficient for


    OCR Scan     		28-PIN DS9003 DS1868 LM 4440 AUDIO AMPLIFIER CIRCUIT DS1230y-200 battery date codes circuit diagram laptop motherboard Scans-049 texas instrument catalog 74ls DS1666-50 st c031 s1040 diode PDF

    DS2501 transistor

    Abstract: WASHING machine interfacing 8051 Sony Semiconductor Replacement Handbook 1991 touch dimmer TC 306 S PNI 12927 edn handbook dallas ds2501 NE5532 signetics texas instruments cmos mosfet MOSFET BOOK
    Text: J Copyright 1996 by Dallas SemiconductorCorporation. All Rights Reserved. Dallas Semiconductor retains all ownership rights in the technology described herein. Trademarks and registered trademarks of Dallas Semiconductor include each of the following: Dallas Semiconductor Corporation


    OCR Scan     		DS1802 DS2501 transistor WASHING machine interfacing 8051 Sony Semiconductor Replacement Handbook 1991 touch dimmer TC 306 S PNI 12927 edn handbook dallas ds2501 NE5532 signetics texas instruments cmos mosfet MOSFET BOOK PDF

    1EEE1394

    Abstract: H 735 b1369 xl 1225 CE81
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20110-1E Semicustom CMOS Macro embedded type cell array CE81 Series • DESCRIPTION The CE81 series of 0.18 Am CMOS macro-embedded cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    OCR Scan     		PDF