EDH4256-10
Abstract: EDH4256-12 EDH4256-15
Text: Electronic Designs Inc. EDH4256-10/12/15 256K x 1 DRAM The EDH4256 is intended for use in any application where large quantities of memory are required and/or board space is o f prime concern. General uses include computer memories, military, consumer, and automotive electronics.
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EDH4256-10/12/15
EDH4256
EDH4256-10)
EDH4256-12)
EDH4256-10
EDH4256-12
EDH4256-15
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Untitled
Abstract: No abstract text available
Text: Electronic Designs Inc. EDH4256N-10/12 256K x 1 DRAM NIBBLE M O DE The EDH4256N is intended for use in any application where large quantities of memory are required and/or board space is of prime concern. General uses include computer memories, military, consumer and automotive electronics.
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EDH4256N-10/12
EDH4256N
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EDH4256N-10
Abstract: EDH4256N-12
Text: Electronic Designs Inc. EDH4256N-10/12 256K x 1 DRAM NIBBLE MODE The EDH4256N is intended for use in any application where large quantities of memory are required and/or board space is of prime concern. General uses include computer memories, military, consumer and automotive electronics.
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EDH4256N-10/12
EDH4256N
EDH4256N-10
EDH4256N-12
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Untitled
Abstract: No abstract text available
Text: ^ Electronic Designs Inc. EDH4256-10/12/15 256K x 1 DRAM The EDH4256 is intended for use in any application where large quantities of memory are required and/or board space is of prime concern. General uses include computer memories, military, consumer, and automotive electronics.
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EDH4256-10/12/15
EDH4256
EDH4256-10)
EDH4256-12)
EDH4256-15)
385mW
110mW
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EDH411MN-10
Abstract: EDH411MN-12 EDH411MN-15
Text: Electronic Designs ln< - ' . EDH411MN-10/12/15 . < ^ ^ \ s v • -» •» V \ ' »v • PINOUTS VC C RASO DOUT A3 A6 □ IN WE RÂS1 AO A7 A8 C AS RAS2 c C C c c c C 8 c 9 c 17 C 18 C vc c vss • C om m on D IN /D O U T lines w ith separate RAS co ntro l
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EDH411MN-10/12/15
EDH411MN
EDH411MN-10
EDH411MN-12
EDH411MN-15
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H411M
Abstract: No abstract text available
Text: Electronic Designs ln< EDH411MN-10/12/15 1M x 1 DRAM NIBBLE MODE The EDH411M N is intended fo r use in a ny a pplication where large quantities o f m em ory are required a n d /o r board space is of prim e concern. General uses include co m pu ter memories, consum er and autom otive electronics. Sam ple
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EDH411MN-10/12/15
EDH411M
EDH411MN-10)
230ns
H411M
260ns
EDH411MN-15)
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EDH411M-10
Abstract: EDH411M-12 EDH411M-15
Text: Electronic Designs Inc. EDH411M-10/12/15 1M x 1 DRAM T h e ED H411M is intended fo r use in a ny application where large quantities o f m em ory are required a n d /o r board space is o f prim e concern. G eneral uses include com pu ter memories, consu m e r and autom otive electronics. Sam ple
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EDH411M-10/12/15
EDH411M
EDH411M-10)
EDH411M-10
EDH411M-12
EDH411M-15
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Untitled
Abstract: No abstract text available
Text: OCT 2 » 1990 EDI44256C Electronic D atign t In c« High Performance Megabit Monolithic DRAM 256Kx4 Dynamic RAM CMOS, Monolithic Features P R Ë U M 1 ÏM Y The EDI44256C is a high performance, low power CMOS Dynamic RAM organized as 256Kx4. The use of triple-layer polysilicon process, combined with silicide
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EDI44256C
256Kx4
EDI44256C
256Kx4.
EDI44256C70ZB
EDI44256C80ZB
EDI44256C100ZB
EDI44256C80NB
EDI44256C120ZB
EDI44256C150ZB
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Untitled
Abstract: No abstract text available
Text: Electronic Designs Inc. EDH411M-10/12/15 1M x 1 DRAM The EDH411M is intended for use in any application where large quantities of memory are required and/or board space is of prime concern. General uses include computer memories, consumer and automotive electronics. Sample
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EDH411M-10/12/15
EDH411M
576x1
EDH411M-10)
EDH411M-12)
260ns
EDH411M-15)
385mW
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