EMP308 Search Results

EMP308 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
EMP308		Excelics Semiconductor	24.5-26.5 GHz Power Amplifier MMIC		Original	PDF

EMP308 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2p308 Abstract: EMP308 P308 MT291 mmic amplifier g1 power amplifier mmic Text: EMP308 24.5–26.5 GHz Power Amplifier MMIC Issued Date: 12-18-03 FEATURES • • • 24.5 – 26.5 GHz Bandwidth 27.5dBm Output Power at 1dB Compression 16 dB Typical Power Gain APPLICATIONS • • Point-to-point and point-to-multipoint radio Military Radar Systems	Original	EMP308 2250um 1130um MT291 270mA 2p308 EMP308 P308 mmic amplifier g1 power amplifier mmic	PDF
EPA080A-100P Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.	Original		PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

2p308

Abstract: EMP308 P308 MT291 mmic amplifier g1 power amplifier mmic
Text: EMP308 24.5–26.5 GHz Power Amplifier MMIC Issued Date: 12-18-03 FEATURES • • • 24.5 – 26.5 GHz Bandwidth 27.5dBm Output Power at 1dB Compression 16 dB Typical Power Gain APPLICATIONS • • Point-to-point and point-to-multipoint radio Military Radar Systems

Original

EMP308 2250um 1130um MT291 270mA 2p308 EMP308 P308 mmic amplifier g1 power amplifier mmic

PDF

EPA080A-100P

Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.