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    Abstract: No abstract text available
    Text: b S 4 T Û 2 cî 0017054 131 • MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1423B SM ALL SIGNAL GaAs FET DESCRIPTION The M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -channel S cho ttky ga te, is designed fo r use in S to Ku band am pli­ fiers. FEATURES


    OCR Scan     		F1423B 12GHz PDF

    MGF1423B

    Abstract: fet sm 367 KU 612 614 104 133 21 D094 MGF1423
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> F1423B SMALL SIGNAL GaAs FET DESCRIPTION T he M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -chann el S ch o ttky gate, is designed fo r use in S to Ku band am pli­ fiers. FEATURES • High linear power gain • High o utp ut power at 1 dB gain compression


    OCR Scan     		MGF1423B MGF1423B, 13dBm 157MIN. 12GHz MGF1423B fet sm 367 KU 612 614 104 133 21 D094 MGF1423 PDF