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    NXP Semiconductors BF996S,215

    RF MOSFET 15V SOT143B
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    DigiKey BF996S,215 Reel
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    Avnet Silica BF996S,215 3,000
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    EBV Elektronik BF996S,215 3,000
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    Philips Semiconductors BF996S

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    Bristol Electronics BF996S 573
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    Siemens BF996SE6327

    Electronic Component
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    ComSIT USA BF996SE6327 3,347
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    Vishay Intertechnologies BF996SAGS08

    N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE, DEPLETION MODE RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA BF996SAGS08 109
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    Others BF996SE6327

    INSTOCK
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    Chip 1 Exchange BF996SE6327 3,000
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    F996S Datasheets Context Search

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    FM02

    Abstract: marking ANs bs 159 FET MARKING CODE BF996S BF996
    Text: L3E D • 1^53*124 D 0 7 4 3 1 1 MES H S I C 3 B F996S NAPC/PHILIPS SEHICON] FOR D E T A ILE D IN F O R M A TIO N SEE THE LATEST ISSUE OF HAN DBO O K SC07 OR DATASHEET SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and


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    D074311 BF996S OT143 FM02 marking ANs bs 159 FET MARKING CODE BF996S BF996 PDF

    fet MARKING MHp

    Abstract: sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S
    Text: F996S PHILIPS INTERNATIONAL 5 bE D 711002b D 0 3 l+D7û ÖTß • PHIN F O R D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T ISSUE OF H A N D B O O K SC07 O R D A T A S H E E T T - 35-27 SILICON N-CHANNEL DUAL GATE MOS-FET D e pletion ty p e fie ld -e ffe c t tra n sisto r in a plastic SO T143 m icro m in ia tu re envelope w ith source and


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    BF996S OT143 OT143. fet MARKING MHp sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S PDF

    Untitled

    Abstract: No abstract text available
    Text: T - 3 I- 0 .3 T Silicon N Channel MOSFET Tetrode 32E D • fl23b320 OQLbflL? b BF 996 S I S IP SIEMENS/ SPCL-, SEMICONDS • • • For input stages in UHF TV tuners High transconductance Low noise figure Type Marking Ordering code for versions in bulk BF 996 S


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    fl23b320 Q62702-F964 Q62702-F1021 23b320 PDF

    marking code 11G1

    Abstract: No abstract text available
    Text: b b S B ' m 0DE4750 462 « A P X N AMER PHILIPS/DISCRETE F996S b7E » y v . SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners.


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    0DE4750 BF996S OT143 marking code 11G1 PDF

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc PDF

    BF996S

    Abstract: free transistor bs 200 marking ANs marking BS mosfet
    Text: m bb53^31 QÜBM75Q 4Ö2 H A P X N AMER PHILIPS/DISCRETE F996S b7E D SILICON N-CHANNEL DUAL GATE MOS-FET D epletion typ e fie ld -e ffe c t tran sisto r in a plastic SO T143 m icro m in ia tu re envelope w ith source and substrate interconnected and intended fo r U H F a pplications in television tuners.


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    BM75Q BF996S OT143 BF996S free transistor bs 200 marking ANs marking BS mosfet PDF