FDP14N30 Search Results

FDP14N30 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FDP14N30		Fairchild Semiconductor	300V N-Channel MOSFET		Original	PDF

FDP14N30 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FDPF14N30 Abstract: FDP14N30 Text: UniFET TM FDP14N30 / FDPF14N30 300V N-Channel MOSFET Features Description • 14A, 300V, RDS on = 0.29Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	PDF	FDP14N30 FDPF14N30 FDPF14N30
Untitled Abstract: No abstract text available Text: TM UniFET FDP14N30 / FDPF14N30 300V N-Channel MOSFET Features Description • 14A, 300V, RDS on = 0.29Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	PDF	FDP14N30 FDPF14N30

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FDPF14N30

Abstract: FDP14N30
Text: UniFET TM FDP14N30 / FDPF14N30 300V N-Channel MOSFET Features Description • 14A, 300V, RDS on = 0.29Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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FDP14N30 FDPF14N30 FDPF14N30

Untitled

Abstract: No abstract text available
Text: TM UniFET FDP14N30 / FDPF14N30 300V N-Channel MOSFET Features Description • 14A, 300V, RDS on = 0.29Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.